Invention Grant
- Patent Title: Method of plasma processing and apparatuses using the method
- Patent Title (中): 等离子体处理方法及使用该方法的装置
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Application No.: US14021335Application Date: 2013-09-09
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Publication No.: US09136094B2Publication Date: 2015-09-15
- Inventor: Jung Hyun Cho , Hyung Joon Kim , Sang Jean Jeon , Sang Heon Lee , Jeong Yun Lee , Kyung Yub Jeon , Vasily Pashkovskiy
- Applicant: Jung Hyun Cho , Hyung Joon Kim , Sang Jean Jeon , Sang Heon Lee , Jeong Yun Lee , Kyung Yub Jeon , Vasily Pashkovskiy
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0002807 20130110
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/3065 ; H01L21/67 ; H05H1/24
Abstract:
A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.
Public/Granted literature
- US20140193978A1 METHOD OF PLASMA PROCESSING AND APPARATUSES USING THE METHOD Public/Granted day:2014-07-10
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