公开(公告)号：US08858943B2

公开(公告)日：2014-10-14

申请号：US12679917

申请日：2008-09-23

Applicant: Stephen Anthony Burbidge ,  Ian Richard Catchpole ,  Jonathan Henry Ellis ,  Susannah Karen Ford ,  Volker Germaschewski ,  Umesh Kumar ,  Karen Louise Philpott ,  Peter Ernest Soden

Inventor： Stephen Anthony Burbidge ,  Ian Richard Catchpole ,  Jonathan Henry Ellis ,  Susannah Karen Ford ,  Volker Germaschewski ,  Umesh Kumar ,  Karen Louise Philpott ,  Peter Ernest Soden

IPC: A61K39/395 ,  A61K35/30 ,  A61K35/44 ,  C07K16/18 ,  A61K39/00

CPC classification number: C07K16/18 ,  A61K2039/505 ,  C07K2317/24 ,  C07K2317/55 ,  C07K2317/567

Abstract: The present invention relates to methods of treating diseases or disorders affecting the eye or optic nerve characterized by elevated β-amyloid levels or β-amyloid deposits, particularly age related macular degeneration and glaucoma type diseases and β-amyloid dependent cataract formation, with antigen binding proteins that bind β-amyloid peptide and in particular human β-amyloid peptide.

Abstract translation: 本发明涉及治疗影响眼睛或视神经的疾病或病症的方法，其特征在于升高的淀粉样蛋白水平或淀粉样蛋白沉积物，特别是年龄相关性黄斑变性和青光眼型疾病和淀粉样蛋白依赖性白内障形成， 具有结合β-淀粉样蛋白肽的特异性抗原结合蛋白，特别是人和淀粉样蛋白肽。

公开(公告)号：US07925643B2

公开(公告)日：2011-04-12

申请号：US12037417

申请日：2008-06-08

Applicant: Umesh Kumar B. Balegar ,  Rohit Shetty

Inventor： Umesh Kumar B. Balegar ,  Rohit Shetty

IPC: G06F7/00

CPC classification number: G06F17/2247 ,  G06F17/227

Abstract: A statistical tree representing an eXtensible Markup Language (XML) Schema document (XSD) is generated. The statistical tree captures information defined by the XSD by representing elements, attributes, and enumerations of the XSD as branches, nodes, and leaves of the statistical tree. The statistical tree has bits corresponding to nodes of the statistical tree. An XML document defined by the XSD is adaptively encoded, or compressed, as a number of bits based on the statistical tree that has been generated. The number of bits encoding the XML document are decoded, or decompressed, to yield the XML document also based on the statistical tree that has been generated.

Abstract translation: 生成表示可扩展标记语言（XML）模式文档（XSD）的统计树。 统计树通过将XSD的元素，属性和枚举表示为统计树的分支，节点和树叶来捕获由XSD定义的信息。 统计树具有与统计树的节点对应的位。 由XSD定义的XML文档基于已经生成的统计树被自适应地编码或压缩为多个位。 编码XML文档的比特数被解码或解压缩，以产生XML文档，同时也基于已经生成的统计树。

公开(公告)号：US20090307244A1

公开(公告)日：2009-12-10

申请号：US12037417

申请日：2008-06-08

Applicant: Umesh Kumar B. Balegar ,  Rohit Shetty

Inventor： Umesh Kumar B. Balegar ,  Rohit Shetty

IPC: G06F17/30 ,  G06F7/06

CPC classification number: G06F17/2247 ,  G06F17/227

Abstract: A statistical tree representing an extensible Markup Language (XML) Schema document (XSD) is generated. The statistical tree captures information defined by the XSD by representing elements, attributes, and enumerations of the XSD as branches, nodes, and leaves of the statistical tree. The statistical tree has bits corresponding to nodes of the statistical tree. An XML document defined by the XSD is adaptively encoded, or compressed, as a number of bits based on the statistical tree that has been generated. The number of bits encoding the XML document are decoded, or decompressed, to yield the XML document also based on the statistical tree that has been generated.

Abstract translation: 生成表示可扩展标记语言（XML）模式文档（XSD）的统计树。 统计树通过将XSD的元素，属性和枚举表示为统计树的分支，节点和树叶来捕获由XSD定义的信息。 统计树具有与统计树的节点对应的位。 由XSD定义的XML文档基于已经生成的统计树被自适应地编码或压缩为多个位。 编码XML文档的比特数被解码或解压缩，以产生XML文档，同时也基于已经生成的统计树。

公开(公告)号：US20080120608A1

公开(公告)日：2008-05-22

申请号：US11561043

申请日：2006-11-17

Applicant: Rohit Shetty ,  Umesh Kumar Balaraj

Inventor： Rohit Shetty ,  Umesh Kumar Balaraj

IPC: G06F9/45 ,  G06F17/00

CPC classification number: G06F17/2229 ,  G06F17/2247

Abstract: A method and apparatus for generating a statistical tree representing an extensible markup language Schema (XSD) is disclosed. Components of the XSD are prioritized according to predefined rules. A root node representing the XSD is created. Pairs of child nodes are generated from the root node. Each pair comprises at least one genuine node, and each pair of generated child nodes is appended to a parent node which is a genuine node. The path to each of the child nodes from a respective parent genuine node is represented with a binary sequence. At least one genuine node is allocated to a corresponding component of the XSD, the allocation being based on the prioritization of the component. Methods, apparatus and computer program products for generating a statistical tree representing XSD, for encoding an extensible markup language (XML) document utilizing a statistical tree representing XSD, and for decoding an XML document represented by a binary encoded sequence also are disclosed.

Abstract translation: 公开了一种用于生成表示可扩展标记语言模式（XSD）的统计树的方法和装置。 XSD的组件根据预定义的规则进行优先排序。 创建表示XSD的根节点。 从根节点生成成对的子节点。 每对包括至少一个正版节点，并且每对生成的子节点被附加到作为真实节点的父节点。 来自相应父母节点的每个子节点的路径用二进制序列表示。 至少一个正版节点分配给XSD的相应组件，该分配基于组件的优先级。 还公开了用于生成表示XSD的统计树的方法，装置和计算机程序产品，用于使用表示XSD的统计树对可扩展标记语言（XML）文档进行编码，以及用于对由二进制编码序列表示的XML文档进行解码。

公开(公告)号：US20080113496A1

公开(公告)日：2008-05-15

申请号：US11855591

申请日：2007-09-14

Applicant: Stacia Keller ,  Umesh Kumar Mishra ,  Nicholas A. Fichtenbaum

Inventor： Stacia Keller ,  Umesh Kumar Mishra ,  Nicholas A. Fichtenbaum

IPC: H01L21/36

CPC classification number: C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262

Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.

Abstract translation: 公开了通过MOCVD生长的N面GaN薄膜的平滑，高质量薄膜异质外延生长的方法。 使用错误取向的衬底并且可能使衬底氮化使得能够生长平滑的N面GaN和其他III族氮化物膜，如本文所公开的。 本发明还避免了使得N面GaN材料不适合于器件应用的典型的大（母体尺寸）六角形特征。 本发明允许平滑，高质量的膜的生长，这使得N面装置的发展成为可能。

公开(公告)号：US06261931B1

公开(公告)日：2001-07-17

申请号：US09100921

申请日：1998-06-19

Applicant: Stacia Keller ,  Bernd Peter Keller ,  Umesh Kumar Mishra ,  Steven P. DenBaars

Inventor： Stacia Keller ,  Bernd Peter Keller ,  Umesh Kumar Mishra ,  Steven P. DenBaars

IPC: H01L2120

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method for growing high-quality gallium nitride over a substrate is disclosed. The method comprises growing first layer with a high dislocation density over the substrate, a second layer having a high number of point defects and a reduced dislocation density as compared to the dislocation density of the first layer over the first layer, and a third layer having a reduced number of point defects as compared to the second layer over the second layer. The resulting gallium nitride is semi-insulating, which inhibits parasitic current flow and parasitic capacitive effects, yet it not so insulating that electron flow in adjacent transistor channels is inhibited.

Abstract translation: 公开了一种在衬底上生长高质量氮化镓的方法。 该方法包括在衬底上生长具有高位错密度的第一层，与第一层上的第一层的位错密度相比，具有大量点缺陷的第二层和减少的位错密度，以及具有 与第二层上的第二层相比减少数量的点缺陷。 所得到的氮化镓是半绝缘的，其抑制寄生电流和寄生电容效应，但是它不会使相邻晶体管沟道中的电子流阻碍而绝缘。

公开(公告)号：US06169049A

公开(公告)日：2001-01-02

申请号：US08847613

申请日：1997-04-28

Applicant: John P. Witham ,  Clive A. Randall ,  Umesh Kumar ,  Ulagaraj Selvaraj ,  Sea-Fue Wang ,  Joseph P. Dougherty

Inventor： John P. Witham ,  Clive A. Randall ,  Umesh Kumar ,  Ulagaraj Selvaraj ,  Sea-Fue Wang ,  Joseph P. Dougherty

IPC: C04B35468

CPC classification number: C04B35/62222 ,  C04B35/468

Abstract: Hydrothermal BaTiO3 crystallites were coated with Bismuth solutions prepared from Bismuth metal-organics and anhydrous solvents. The Bismuth metal-organics were Bi 2-ethylhexanoate and Bi-neodecanoate. Bismuth oxide was also used as a comparison to the Bismuth solutions. BaTiO3 ceramics with either 3.0 wt % equivalent Bismuth oxide or 5.0 wt % equivalent Bismuth oxide were made by sintering the compacts between 700° C. and 1000° C. BaTiO3 ceramics that were coated by Bi-neodecanoate densified >90% theoretical as low as 800° C. for 3.0 wt % equivalent Bi2O3. Average grain sizes of 0.2-0.4 &mgr;m were observed for Bi-coated BaTiO3 ceramics, for sintering temperatures below 950° C. Dielectric K versus temperature measurements of Bismuth-coated BaTiO3 ceramics, sintered in the lower temperature ranges, showed consistently superior dielectric characteristics.

Abstract translation: 用由铋金属有机物和无水溶剂制备的铋溶液涂覆水热BaTiO 3微晶。 铋金属有机物为Bi 2-乙基己酸酯和双 - 新癸酸酯。 氧化铋也用作与铋溶液的比较。 通过烧结700℃和1000℃之间的压块来制备具有3.0重量％当量氧化铋或5.0重量％当量氧化铋的BaTiO 3陶瓷。由新癸酸酯涂覆的BaTiO 3陶瓷致密化> 90％理论值低至 800℃，3.0重量％当量Bi 2 O 3。 对于Bi包覆的BaTiO 3陶瓷，烧结温度低于950℃，观察到平均晶粒尺寸为0.2-0.4μm。在较低温度范围内烧结的铋包覆的BaTiO 3陶瓷的介电K与温度测量显示出一贯优异的介电特性。

公开(公告)号：US5872031A

公开(公告)日：1999-02-16

申请号：US757875

申请日：1996-11-27

Applicant: Umesh Kumar Mishra ,  Primit A. Parikh

Inventor： Umesh Kumar Mishra ,  Primit A. Parikh

IPC: H01L21/28 ,  H01L21/30 ,  H01L21/336 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/51 ,  H01L29/78 ,  H01L29/80 ,  H01L21/8238

CPC classification number: H01L29/517 ,  H01L21/28264 ,  H01L21/3006 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66522 ,  H01L29/7838 ,  H01L29/802

Abstract: The present invention discloses a method of forming an oxide layer on a layer of gallium arsenide, including the steps of depositing a layer of aluminum arsenide on the layer of gallium arsenide, of exposing the layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide during the exposing step, so as to ensure enhanced electrical properties in the aluminum oxide. The method is used to provide an insulating gate layer for a GaAs field effect transistor by forming an oxide layer on GaAs and controlling excess arsenic so as to maintain high resistivity in the oxide layer and to avoid the formation of interface surface states which degrade transistor performance. The method is also used to provide complementary metal-insulator-semiconductor logic devices based on the gallium arsenide field effect transistor.

Abstract translation: 本发明公开了一种在砷化镓层上形成氧化物层的方法，包括以下步骤：在砷化镓层上沉积砷化铝层，将砷化铝层暴露于氧化气体混合物，使得 砷化铝被氧化成氧化铝，并且在曝光步骤期间控制在氧化铝中释放的过量的砷，以确保氧化铝中的电性能增强。 该方法用于通过在GaAs上形成氧化物层并且控制多余的砷以在氧化物层中保持高电阻率并避免形成降低晶体管性能的界面表面状态来为GaAs场效应晶体管提供绝缘栅层 。 该方法还用于提供基于砷化镓场效应晶体管的互补金属 - 绝缘体 - 半导体逻辑器件。

公开(公告)号：US5780355A

公开(公告)日：1998-07-14

申请号：US757873

申请日：1996-11-27

Applicant: Umesh Kumar Mishra ,  Steven P. DenBaars ,  Stacia Keller

Inventor： Umesh Kumar Mishra ,  Steven P. DenBaars ,  Stacia Keller

IPC: H01L21/205 ,  H01L33/00

CPC classification number: H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

Abstract: A method for producing Group III nitride films with high indium content and superior optical quality. The Group III nitride film will produce light in the ultraviolet, blue, green, yellow, and red spectral regions. This will enable fabrication of full-color displays and produce a reliable white light source. A metal organic chemical vapor deposition (MOCVD) process in combination with a photochemical process reduces the growth temperature required to produce optical quality Group III nitride films.

Abstract translation: 一种生产具有高铟含量和优异光学质量的III族氮化物薄膜的方法。 III族氮化物膜将在紫外线，蓝色，绿色，黄色和红色光谱区域产生光。 这将使得能够制造全彩色显示器并产生可靠的白光源。 与光化学工艺结合的金属有机化学气相沉积（MOCVD）工艺降低了生产光学质量III族氮化物膜所需的生长温度。

公开(公告)号：US10272052B2

公开(公告)日：2019-04-30

申请号：US15905748

申请日：2018-02-26

Applicant: Umesh Kumar Jinwal ,  Vetriselvan Manavalan

Inventor： Umesh Kumar Jinwal ,  Vetriselvan Manavalan

IPC: A61K9/00 ,  A61P25/28 ,  A61K31/055

Abstract: Disclosed herein are compositions and methods for treating tauopathies such as Alzheimer's disease (AD). Also provided herein are methods of reducing or disrupting tau aggregation in a subject, and methods of reducing tau protein in a subject. The methods may include administering to the subject a therapeutic amount of hexachlorophene, or a pharmaceutically acceptable salt thereof. Further provided herein are pharmaceutical compositions comprising hexachlorophene, or a pharmaceutically acceptable salt thereof, for the treatment of a tauopathy in a subject.