Abstract:
A method including forming an intermediate product, the intermediate product being configured to include a wiring substrate including a plurality of first electrodes, a plurality of second electrodes and a plurality of test electrodes, a first semiconductor chip mounted over the wiring substrate and including a plurality of first pads electrically connected respectively to the first electrodes, and a second semiconductor chip stacked over the first semiconductor chip and including a plurality of second pads electrically connected respectively to the second electrodes; encapsulating the first and second semiconductor chips; and performing electrical tests on the first and second semiconductor chips by use of the test electrodes, after the encapsulating of the first and second semiconductor chips.
Abstract:
A semiconductor device featuring a substrate having a first surface defined by a first edge and an opposing second edge, electrode pads formed on the first surface, a first semiconductor chip mounted over the first surface between the first edge and the electrode pads and including first pads each electrically connected to a corresponding electrode pad, a second semiconductor chip stacked over the first semiconductor chip and including second pads each electrically connected to a corresponding electrode pad, a third semiconductor chip mounted over the first surface of the substrate between the second edge and the electrode pads and including third pads each electrically connected to a corresponding electrode pad, in which one electrode pad is electrically connected to one first pad, one second pad and one third pad and another electrode pad is electrically connected to a first pad and a second pad corresponding thereto, via separate bonding wires.
Abstract:
A semiconductor device includes first to third semiconductor chips. The second semiconductor chip is stacked over the first semiconductor chip. The third semiconductor chip is stacked over the second semiconductor chip. The second semiconductor chip shields the first semiconductor chip from noises generated by the third semiconductor chip. The second semiconductor chip shields the third semiconductor chip from noises generated by the first semiconductor chip.
Abstract:
A method including forming an intermediate product, the intermediate product being configured to include a wiring substrate including a plurality of first electrodes, a plurality of second electrodes and a plurality of test electrodes, a first semiconductor chip mounted over the wiring substrate and including a plurality of first pads electrically connected respectively to the first electrodes, and a second semiconductor chip stacked over the first semiconductor chip and including a plurality of second pads electrically connected respectively to the second electrodes; encapsulating the first and second semiconductor chips; and performing electrical tests on the first and second semiconductor chips by use of the test electrodes, after the encapsulating of the first and second semiconductor chips.
Abstract:
To provide a toner manufacturing method including: dissolving or dispersing a toner material into an organic solvent to prepare a toner solution, the toner material containing at least an active hydrogen group-containing compound, polymer reactive with the active hydrogen group-containing compound, binder resin, releasing agent and coloring agent; emulsifying or dispersing the toner solution into an aqueous medium to prepare an emulsified dispersion; reacting the active hydrogen group-containing compound with the polymer reactive with the active hydrogen group-containing compound in the aqueous medium produce an adhesive base material in the form of particle; and removing the organic solvent, wherein time X (hour) from a point where the organic solvent starts to be removed to a point where the concentration of the organic solvent reaches less than 12% by mass and temperature T (° C.) of the emulsified dispersion at the time X satisfy the relationship 5{exp(−0.2X)+1}≦T≦50X−0.2.
Abstract:
A technique for mounting two semiconductor chips over a wiring substrate including mounting a first chip having first bonding pads over a surface of the wiring substrate having electrodes and stacking the second chip having second bonding pads over the first chip; connecting each of the first bonding pads to an associated one of the electrodes of the wiring substrate via an associated first wire; and connecting each of the second bonding pads to an associated one of the electrodes of the wiring substrate via an associated second wire. The bondings being carried out using a reverse bonding method in which at least one of the first and second wires are first bonded to an associated one of the electrodes of the wiring substrate followed by the bonding thereof to an associated one of the bonding pads of the first or second semiconductor chip.
Abstract:
A semiconductor device includes first to third semiconductor chips. The second semiconductor chip is stacked over the first semiconductor chip. The third semiconductor chip is stacked over the second semiconductor chip. The second semiconductor chip shields the first semiconductor chip from noises generated by the third semiconductor chip. The second semiconductor chip shields the third semiconductor chip from noises generated by the first semiconductor chip.
Abstract:
A technique for mounting two semiconductor chips over a wiring substrate including mounting a first chip having first bonding pads over a surface of the wiring substrate having electrodes and stacking the second chip having second bonding pads over the first chip; connecting each of the first bonding pads to an associated one of the electrodes of the wiring substrate via an associated first wire; and connecting each of the second bonding pads to an associated one of the electrodes of the wiring substrate via an associated second wire. The bondings being carried out using a reverse bonding method in which at least one of the first and second wires are first bonded to an associated one of the electrodes of the wiring substrate followed by the bonding thereof to an associated one of the bonding pads of the first or second semiconductor chip.
Abstract:
To provide a toner manufacturing method including: dissolving or dispersing a toner material into an organic solvent to prepare a toner solution, the toner material containing at least an active hydrogen group-containing compound, polymer reactive with the active hydrogen group-containing compound, binder resin, releasing agent and coloring agent; emulsifying or dispersing the toner solution into an aqueous medium to prepare an emulsified dispersion; reacting the active hydrogen group-containing compound with the polymer reactive with the active hydrogen group-containing compound in the aqueous medium produce an adhesive base material in the form of particle; and removing the organic solvent, wherein time X (hour) from a point where the organic solvent starts to be removed to a point where the concentration of the organic solvent reaches less than 12% by mass and temperature T (° C.) of the emulsified dispersion at the time X satisfy the relationship 5{exp(−0.2 X)+1}≦T≦50 X−0.2.
Abstract translation:提供一种调色剂制造方法,包括:将调色剂材料溶解或分散到有机溶剂中以制备调色剂溶液,所述调色剂材料至少含有含活性氢基团的化合物,与含活性氢基团的化合物反应的聚合物,粘合剂 树脂,脱模剂和着色剂; 将调色剂溶液乳化或分散到水性介质中以制备乳化分散体; 使含活性氢基团的化合物与在水性介质中与含活性氢基团的化合物反应的聚合物反应,生成颗粒形式的粘合剂基材; 并除去有机溶剂开始被除去的时刻X(小时)到有机溶剂的浓度达到12质量%以下的时间和温度T(℃)的有机溶剂, 乳化分散体在时间X满足关系5 {exp(-0.2 X)+1} <= T <= 50 X -0.2 SUP>。
Abstract:
Two memory chips mounted over a base substrate have the same external size and a flash memory of the same memory capacity formed thereon. These memory chips are mounted over the base substrate with one of them being overlapped with the upper portion of the other one, and they are stacked with their faces being turned in the same direction. The bonding pads BP of one of the memory chips are disposed in the vicinity of the bonding pads BP of the other memory chip. In addition, the upper memory chip is stacked over the lower memory chip in such a way that the upper memory chip is slid in a direction (X direction) parallel to the one side of the lower memory chip and in a direction (Y direction) perpendicular thereto in order to prevent partial overlapping of it with the bonding pads BP of the lower memory chip.