METHOD, PHOTOLITHOGRAPHY METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING A PELLICLE FILM
    1.
    发明申请
    METHOD, PHOTOLITHOGRAPHY METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING A PELLICLE FILM 有权
    方法,光刻方法和使用薄膜形成半导体器件的方法

    公开(公告)号:US20160048079A1

    公开(公告)日:2016-02-18

    申请号:US14706980

    申请日:2015-05-08

    CPC classification number: G03F7/2004 G03F1/62

    Abstract: A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.

    Abstract translation: 用于EUV光刻的防护薄膜组件可以包括防护薄膜,支撑结构和处理块。 防护薄膜可以具有用于与掩模相对定向的第一表面和与第一表面相对的用于朝向掩模定向的第二表面。 防护薄膜可以允许穿过掩模的EUV穿透防护薄膜。 支撑结构可以布置在防护薄膜的第二表面上以支撑防护薄膜。 处理块可以布置在防护薄膜的第一表面上。 处理块可以具有用于暴露防护薄膜的开口。 因此,可以使用厚的处理块而不是薄的防护薄膜来处理防护薄膜,使得薄的防护薄膜不会被损坏。 防护薄膜组件可以保护面罩免于在EUV光刻工艺中产生的副产物,使得面罩不被污染。

    Method of manufacturing reflective extreme ultraviolet mask
    2.
    发明授权
    Method of manufacturing reflective extreme ultraviolet mask 有权
    制造反射性极紫外线掩膜的方法

    公开(公告)号:US09239516B2

    公开(公告)日:2016-01-19

    申请号:US14630825

    申请日:2015-02-25

    CPC classification number: G03F1/24 G03F1/38 G03F1/80

    Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

    Abstract translation: 反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板,所述掩模基板在所述周边区域中包括光散射部分,所述掩模基板的上表面上的反射层,所述反射层具有第一 打开曝光光散射部分和在反射层上的吸收层图案,吸收层图案具有与第一开口光连通的第二开口。

    Reflective extreme ultraviolet mask and method of manufacturing the same
    3.
    发明授权
    Reflective extreme ultraviolet mask and method of manufacturing the same 有权
    反射极紫外线掩膜及其制造方法

    公开(公告)号:US08968969B2

    公开(公告)日:2015-03-03

    申请号:US13302143

    申请日:2011-11-22

    CPC classification number: G03F1/24 G03F1/38 G03F1/80

    Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

    Abstract translation: 反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板,所述掩模基板在所述周边区域中包括光散射部分,所述掩模基板的上表面上的反射层,所述反射层具有第一 打开曝光光散射部分和在反射层上的吸收层图案,吸收层图案具有与第一开口光连通的第二开口。

    Flip-chip type light-emitting device with curved reflective layer
    4.
    发明授权
    Flip-chip type light-emitting device with curved reflective layer 有权
    倒装式发光装置,具有弯曲反射层

    公开(公告)号:US08674594B2

    公开(公告)日:2014-03-18

    申请号:US13326697

    申请日:2011-12-15

    CPC classification number: H01L33/405 H01L33/42

    Abstract: A light-emitting device comprises a substrate; a light-emitting layer formed on the substrate; a transparent electrode layer formed on the light-emitting layer, the transparent electrode layer having a curved surface; and a reflective layer formed on and along the curved surface of the transparent electrode layer such that the curved surface of the transparent electrode layer is transferred so as to reflect the light generated from the light-emitting layer toward the light-emitting layer.

    Abstract translation: 发光装置包括基板; 形成在所述基板上的发光层; 形成在所述发光层上的透明电极层,所述透明电极层具有弯曲表面; 以及在透明电极层的曲面上形成的反射层,使得透明电极层的曲面被转印,以将从发光层产生的光朝向发光层反射。

    REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME 有权
    反射极限超紫外线掩模及其制造方法

    公开(公告)号:US20120135339A1

    公开(公告)日:2012-05-31

    申请号:US13302143

    申请日:2011-11-22

    CPC classification number: G03F1/24 G03F1/38 G03F1/80

    Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in fluid communication with the first opening.

    Abstract translation: 反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板,所述掩模基板在所述周边区域中包括光散射部分,所述掩模基板的上表面上的反射层,所述反射层具有第一 打开曝光所述光散射部分,以及在所述反射层上具有吸收层图案,所述吸收层图案具有与所述第一开口流体连通的第二开口。

    LIGHT EMITTING DEVICE HAVING TRANSPARENT ELECTRODE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    9.
    发明申请
    LIGHT EMITTING DEVICE HAVING TRANSPARENT ELECTRODE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权
    具有透明电极的发光装置及制造发光装置的方法

    公开(公告)号:US20150171262A1

    公开(公告)日:2015-06-18

    申请号:US14413911

    申请日:2012-09-10

    Abstract: Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic contact characteristic with respect to a semiconductor layer and and a method of manufacturing the light emitting device. A transparent electrode of a light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material applied to the material, so that it is possible to obtain high transmittance with respect to light in a UV wavelength range.

    Abstract translation: 提供一种发光器件,其包括相对于UV波长范围以及可见光波长范围内的光具有高透射率的透明电极和相对于半导体层的良好的欧姆接触特性的发光器件,以及制造发光 设备。 通过使用相对于UV波长范围内的光具有高透射率的电阻变化材料形成发光器件的透明电极,并且由于电阻状态由于高电阻状态而被改变为低电阻状态 如果电压超过施加到材料上的材料中固有的阈值电压,则可以在材料中形成电流可以流过的导线,使得可以获得相对于UV波长范围内的光的高透射率。

    Reflective Extreme Ultraviolet Mask
    10.
    发明申请
    Reflective Extreme Ultraviolet Mask 有权
    反光极紫外线面膜

    公开(公告)号:US20110275013A1

    公开(公告)日:2011-11-10

    申请号:US13069758

    申请日:2011-03-23

    CPC classification number: G03F1/24 B82Y10/00 B82Y40/00

    Abstract: According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.

    Abstract translation: 根据示例实施例,反射型EUV掩模可以包括掩模基板,图案化结构和掩模基板上的非图案化结构。 图案化结构和非图案化结构中的至少一个可以包括被配置为减少相应的图案化和非图案化结构的反射率的热处理区域。

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