摘要:
Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.
摘要:
A plasma generator according to an embodiment of the present invention is provided to generate a high density and stable plasma at near atmospheric pressure by preventing a transition of plasma to arc. The plasma generator includes a plate-shaped lower electrode for seating a substrate; and a cylindrical rotating electrode on the plate-shaped lower electrode, wherein the cylindrical rotating electrode includes an electrically conductive body that is connected to a power supply and includes a plurality of capillary units on an outer circumferential surface of the electrically conductive body; and an insulation shield layer that is made of an insulation material or a dielectric material, exposes a lower surface of the plurality of capillary units, and shields other parts.
摘要:
Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.
摘要:
In one embodiment, the display device includes a display panel and a support frame. The display panel includes a flexible upper substrate, at least one light emitting diode, and a flexible lower substrate (30). The display panel has a display area formed at a portion corresponding to the light emitting diode, and a non-display area formed at a portion other than the display area. The display panel is coupled to the support frame such that a portion of the non-display area is bent with respect to the display area.
摘要:
In one embodiment, the display device includes a display panel and a support frame. The display panel includes a flexible upper substrate, at least one light emitting diode, and a flexible lower substrate (30). The display panel has a display area formed at a portion corresponding to the light emitting diode, and a non-display area formed at a portion other than the display area. The display panel is coupled to the support frame such that a portion of the non-display area is bent with respect to the display area.
摘要:
An organic light emitting display apparatus includes a substrate, a color filter layer on the substrate, a transflective reflective layer on the color filter layer, the transflective reflective layer being configured to partly transmit and partly reflect visible light, a first electrode on the transflective reflective layer, an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, a second electrode on the intermediate layer, and an optical path control layer (OPCL) between the transflective reflective layer and the first electrode, the OPCL including an insulating material and being configured to control a path of light generated in the intermediate layer.
摘要:
Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.
摘要翻译:公开了薄膜太阳能电池和制造薄膜太阳能电池的方法。 根据本发明的薄膜太阳能电池的示例性实施例的薄膜太阳能电池包括基板:形成在基板上的前电极层; 形成在前电极层上的氧化物层:形成在氧化物层上的光吸收层(本征层) 以及形成在所述光吸收层上的背面电极层,其中所述氧化物层由选自MoO 2,WO 2,V 2 O 5,NiO和CrO 3的材料形成。
摘要:
A disk drive including a main chassis; a tray on which a disk is to be removably mounted, the tray being installed to slide into/out of the main chassis, and including a pickup transporting unit that is configured to move a pickup base back and forth in a straight line in a radial direction of the disk. The pickup base includes an optical pickup installed thereon, The disk drive also includes a lock releasing unit that is arranged on the tray, is driven by receiving a driving force of the pickup transporting unit, and releases lock of the tray from the main chassis. The disk drive drives a lock releasing unit by using driving force of a pickup transporting unit.
摘要:
A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer.
摘要:
A method for forming a minute pattern mask includes forming an etching target layer on a substrate. A convex pattern including a plurality of convex parts is formed on the etching target layer. A resin composition is coated on the convex pattern to form a resin layer including a first region neighboring the convex part and a second region positioned between the neighboring convex parts. The resin layer is ashed or etched to form the plurality of first resin patterns. The plurality of first resin patterns is processed to form a minute pattern mask including a plurality of second resin patterns. The etching target layer is etched using the plurality of second resin patterns as an etch mask to form a minute pattern.