Enhancing metal/low-K interconnect reliability using a protection layer
    8.
    发明申请
    Enhancing metal/low-K interconnect reliability using a protection layer 有权
    使用保护层增强金属/低K互连可靠性

    公开(公告)号:US20070216032A1

    公开(公告)日:2007-09-20

    申请号:US11715261

    申请日:2007-03-07

    IPC分类号: H01L23/48

    摘要: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

    摘要翻译: 在互连结构上涂覆或以其它方式形成保护层。 互连结构包括金属线(例如通过金属通孔连接的顶部和底部金属层)和低K材料。 保护层包括垂直排列的电介质或分散有碳纳米管的其它材料。 保护层可以包括一层或多层碳纳米管,并且碳纳米管可以在保护层的每个层中具有任何合适的分散体,取向和图案。 除其他之外,碳纳米管有助于减少或防止互连结构的损坏,例如通过减少或防止低K材料的塌陷或金属线与低K材料之间的分层。