公开(公告)号：US20060228288A1

公开(公告)日：2006-10-12

申请号：US11282872

申请日：2005-11-18

申请人： Lee Chow ,  Dan Zhou ,  Stephen Kleckley

发明人： Lee Chow ,  Dan Zhou ,  Stephen Kleckley

IPC分类号： D01F9/12

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  D01F9/127 ,  D01F9/1271 ,  D01F9/1272 ,  D01F9/133 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/847 ,  Y10S977/86 ,  Y10S977/869 ,  Y10T428/2918 ,  Y10T428/2991

摘要： A method for manufacturing carbon nanotubes with an integrally attached outer graphitic layer is disclosed. The graphitic layer improves the ability to handle and manipulate the nanometer size nanotube device in various applications, such as a probe tip in scanning probe microscopes and optical microscopes, orbs an electron emitting device. A thermal chemical vapor deposition reactor is the preferred reaction vessel in which a transition metal catalyst with an inert gas, hydrogen gas and a carbon-containing gas mixture are heated at various temperatures in a range between 500° C. and 1000° C. with gases and temperatures being adjusted periodically during the reaction times required to grow the nanotube core and subsequently grow the desired outer graphitic layer.

摘要翻译： 公开了一种具有整体连接的外部石墨层的碳纳米管的制造方法。 石墨层提高了在各种应用中处理和操纵纳米尺寸纳米管器件的能力，例如扫描探针显微镜中的探针尖端和光学显微镜，或者是电子发射器件。 热化学气相沉积反应器是优选的反应容器，其中具有惰性气体，氢气和含碳气体混合物的过渡金属催化剂在500℃和1000℃之间的各种温度下加热， 在生长纳米管核心所需的反应时间内周期性地调节气体和温度，随后生长所需的外层石墨层。

公开(公告)号：US07011884B1

公开(公告)日：2006-03-14

申请号：US10424336

申请日：2003-04-25

申请人： Lee Chow ,  Dan Zhou ,  Stephen Kleckley

发明人： Lee Chow ,  Dan Zhou ,  Stephen Kleckley

IPC分类号： D01F9/12

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  D01F9/127 ,  D01F9/1271 ,  D01F9/1272 ,  D01F9/133 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/847 ,  Y10S977/86 ,  Y10S977/869 ,  Y10T428/2918 ,  Y10T428/2991

摘要： A method for manufacturing carbon nanotubes with an integrally attached outer graphitic layer is disclosed. The graphitic layer improves the ability to handle and manipulate the nanometer size nanotube device in various applications, such as a probe tip in scanning probe microscopes and optical microscopes, or as an electron emitting device. A thermal chemical vapor deposition reactor is the preferred reaction vessel in which a transition metal catalyst with an inert gas, hydrogen gas and a carbon-containing gas mixture are heated at various temperatures in a range between 500° C. and 1000° C. with gases and temperatures being adjusted periodically during the reaction times required to grow the nanotube core and subsequently grow the desired outer graphitic layer.

摘要翻译： 公开了一种具有整体连接的外部石墨层的碳纳米管的制造方法。 石墨层提高了在各种应用中处理和操纵纳米尺寸纳米管器件的能力，例如扫描探针显微镜和光学显微镜中的探针尖端或作为电子发射器件。 热化学气相沉积反应器是优选的反应容器，其中具有惰性气体，氢气和含碳气体混合物的过渡金属催化剂在500℃和1000℃之间的各种温度下加热， 在生长纳米管核心所需的反应时间内周期性地调节气体和温度，随后生长所需的外层石墨层。

公开(公告)号：US06582673B1

公开(公告)日：2003-06-24

申请号：US09528259

申请日：2000-03-17

申请人： Lee Chow ,  Dan Zhou ,  Stephen Kleckley

发明人： Lee Chow ,  Dan Zhou ,  Stephen Kleckley

IPC分类号： C01B3104

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  D01F9/127 ,  D01F9/1271 ,  D01F9/1272 ,  D01F9/133 ,  Y10S977/742 ,  Y10S977/745 ,  Y10S977/847 ,  Y10S977/86 ,  Y10S977/869 ,  Y10T428/2918 ,  Y10T428/2991

摘要： A method for manufacturing carbon nanotubes with an integrally attached outer graphitic layer is disclosed. The graphitic layer improves the ability to handle and manipulate the nanometer size nanotube device in various applications, such as a probe tip in scanning probe microscopes and optical microscopes, or as an electron emitting device. A thermal chemical vapor deposition reactor is the preferred reaction vessel in which a transition metal catalyst with an inert gas, hydrogen gas and a carbon-containing gas mixture are heated at various temperatures in a range between 500° C. and 1000° C. with gases and temperatures being adjusted periodically during the reaction times required to grow the nanotube core and subsequently grow the desired outer graphitic layer.

摘要翻译： 公开了一种具有整体连接的外部石墨层的碳纳米管的制造方法。 石墨层提高了在各种应用中处理和操纵纳米尺寸纳米管器件的能力，例如扫描探针显微镜和光学显微镜中的探针尖端或作为电子发射器件。 热化学气相沉积反应器是优选的反应容器，其中具有惰性气体，氢气和含碳气体混合物的过渡金属催化剂在500℃和1000℃之间的各种温度下加热， 在生长纳米管核心所需的反应时间内周期性地调节气体和温度，随后生长所需的外层石墨层。