公开(公告)号：US12040415B2

公开(公告)日：2024-07-16

申请号：US17514775

申请日：2021-10-29

申请人： SiOnyx, LLC

发明人： James E. Carey ,  Drake Miller

IPC分类号： H01L31/0236 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/028 ,  H01L31/103

CPC分类号： H01L31/02024 ,  H01L27/1446 ,  H01L27/14629 ,  H01L27/14643 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/50

摘要： High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

公开(公告)号：US11721714B2

公开(公告)日：2023-08-08

申请号：US17214333

申请日：2021-03-26

申请人： SiOnyx LLC

发明人： Martin U. Pralle ,  Jeffrey McKee ,  Jason Sickler

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/1462 ,  H01L27/14607 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.

公开(公告)号：US20190206923A1

公开(公告)日：2019-07-04

申请号：US16290756

申请日：2019-03-01

申请人： SiOnyx, LLC

发明人： Jutao Jiang ,  Jeffrey McKee ,  Martin U. Pralle

IPC分类号： H01L27/146 ,  H04N5/376 ,  H01L25/16 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/225

CPC分类号： H01L27/14649 ,  H01L25/167 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14647 ,  H01L2924/0002 ,  H04N5/2256 ,  H04N5/37452 ,  H04N5/3765 ,  H04N9/045 ,  H01L2924/00

摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

公开(公告)号：US10229951B2

公开(公告)日：2019-03-12

申请号：US15674136

申请日：2017-08-10

申请人： SiOnyx, LLC

发明人： Jutao Jiang ,  Jeffrey McKee ,  Martin U. Pralle

IPC分类号： H01L31/00 ,  H01L27/146 ,  H04N9/04 ,  H04N5/376 ,  H01L25/16 ,  H04N5/3745 ,  H04N5/225

摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

公开(公告)号：US20170345951A1

公开(公告)日：2017-11-30

申请号：US15679827

申请日：2017-08-17

申请人： SiOnyx, LLC

发明人： James E. Carey ,  Drake Miller

IPC分类号： H01L31/02 ,  H01L27/146 ,  H01L31/028 ,  H01L27/144 ,  H01L31/0236 ,  H01L31/103

CPC分类号： H01L31/02024 ,  H01L27/1446 ,  H01L27/14629 ,  H01L27/14643 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/50

摘要： High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

公开(公告)号：US09762830B2

公开(公告)日：2017-09-12

申请号：US14183338

申请日：2014-02-18

申请人： SiOnyx, LLC

发明人： Jutao Jiang ,  Matt Borg

IPC分类号： H04N5/225 ,  H04N5/374 ,  H01L27/146 ,  H04N5/355 ,  H04N5/359

CPC分类号： H04N5/374 ,  H01L27/14654 ,  H04N5/35581 ,  H04N5/3591

摘要： A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time.

公开(公告)号：US20160329366A1

公开(公告)日：2016-11-10

申请号：US15216244

申请日：2016-07-21

申请人： SiOnyx, LLC.

发明人： Martin U. Pralle ,  Jeffrey McKee ,  Jason Sickler

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.

公开(公告)号：US11929382B2

公开(公告)日：2024-03-12

申请号：US17369384

申请日：2021-07-07

申请人： SiOnyx, LLC

发明人： Homayoon Haddad ,  Jutao Jiang

IPC分类号： H01L27/146 ,  B23K26/352 ,  B82Y40/00 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L27/14643 ,  B23K26/355 ,  B82Y40/00 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/182

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

公开(公告)号：US11728322B2

公开(公告)日：2023-08-15

申请号：US17681252

申请日：2022-02-25

申请人： SiOnyx, LLC

发明人： Jutao Jiang ,  Jeffrey McKee ,  Martin U. Pralle

IPC分类号： H01L25/16 ,  H01L27/146 ,  H04N23/56 ,  H04N25/70 ,  H04N25/71 ,  H04N25/771 ,  H04N25/131 ,  H04N25/13

CPC分类号： H01L25/167 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14649 ,  H04N23/56 ,  H04N25/70 ,  H04N25/745 ,  H04N25/771 ,  H01L2924/0002 ,  H04N25/131 ,  H04N25/135 ,  H01L2924/0002 ,  H01L2924/00

摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

公开(公告)号：US20210335878A1

公开(公告)日：2021-10-28

申请号：US17369384

申请日：2021-07-07

申请人： SiOnyx, LLC

发明人： Homayoon HADDAD ,  Jutao JIANG

IPC分类号： H01L27/146 ,  B23K26/352 ,  B82Y40/00 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0232

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.