-
公开(公告)号:US11721714B2
公开(公告)日:2023-08-08
申请号:US17214333
申请日:2021-03-26
申请人: SiOnyx LLC
发明人: Martin U. Pralle , Jeffrey McKee , Jason Sickler
IPC分类号: H01L27/146
CPC分类号: H01L27/1463 , H01L27/1462 , H01L27/14607 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.
-
公开(公告)号:US20190206923A1
公开(公告)日:2019-07-04
申请号:US16290756
申请日:2019-03-01
申请人: SiOnyx, LLC
发明人: Jutao Jiang , Jeffrey McKee , Martin U. Pralle
IPC分类号: H01L27/146 , H04N5/376 , H01L25/16 , H04N9/04 , H04N5/3745 , H04N5/225
CPC分类号: H01L27/14649 , H01L25/167 , H01L27/1461 , H01L27/14612 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L2924/0002 , H04N5/2256 , H04N5/37452 , H04N5/3765 , H04N9/045 , H01L2924/00
摘要: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
-
公开(公告)号:US10229951B2
公开(公告)日:2019-03-12
申请号:US15674136
申请日:2017-08-10
申请人: SiOnyx, LLC
发明人: Jutao Jiang , Jeffrey McKee , Martin U. Pralle
IPC分类号: H01L31/00 , H01L27/146 , H04N9/04 , H04N5/376 , H01L25/16 , H04N5/3745 , H04N5/225
摘要: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
-
公开(公告)号:US20160329366A1
公开(公告)日:2016-11-10
申请号:US15216244
申请日:2016-07-21
申请人: SiOnyx, LLC.
发明人: Martin U. Pralle , Jeffrey McKee , Jason Sickler
IPC分类号: H01L27/146
CPC分类号: H01L27/1463 , H01L27/14607 , H01L27/1462 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.
-
公开(公告)号:US11728322B2
公开(公告)日:2023-08-15
申请号:US17681252
申请日:2022-02-25
申请人: SiOnyx, LLC
发明人: Jutao Jiang , Jeffrey McKee , Martin U. Pralle
IPC分类号: H01L25/16 , H01L27/146 , H04N23/56 , H04N25/70 , H04N25/71 , H04N25/771 , H04N25/131 , H04N25/13
CPC分类号: H01L25/167 , H01L27/1461 , H01L27/1464 , H01L27/14612 , H01L27/14625 , H01L27/14645 , H01L27/14647 , H01L27/14649 , H04N23/56 , H04N25/70 , H04N25/745 , H04N25/771 , H01L2924/0002 , H04N25/131 , H04N25/135 , H01L2924/0002 , H01L2924/00
摘要: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
-
公开(公告)号:US10985198B2
公开(公告)日:2021-04-20
申请号:US16290740
申请日:2019-03-01
申请人: SiOnyx, LLC.
发明人: Martin U. Pralle , Jeffrey McKee , Jason Sickler
IPC分类号: H01L27/146
摘要: Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.
-
公开(公告)号:US20160119555A1
公开(公告)日:2016-04-28
申请号:US14864592
申请日:2015-09-24
申请人: SiOnyx, LLC.
CPC分类号: H04N5/33 , G06K9/00604 , H04N7/183
摘要: Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation. The image processing module processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an external quantum efficiency of at least about 33% for at least one wavelength of greater than 800 nm.
摘要翻译: 提供了用于在合作和非合作情况下识别个人的系统,设备和方法。 在一个方面,例如,用于识别个体的系统可以包括能够发射具有约700nm至约1200nm的至少一个波长的电磁辐射的有源光源,以及定位成接收电磁辐射的成像器装置 个人的反思,以产生个人的电子表示。 该系统还可以包括功能上耦合到成像器装置以接收电子表示的图像处理模块。 图像处理模块将电子表示处理成具有至少一个基本上唯一的识别特征的个体表示。 成像器装置可以包括厚度小于约10微米的半导体器件层,形成结的至少两个掺杂区域和被定位成与电磁辐射相互作用的纹理区域,并且可以具有至少的外部量子效率 对于大于800nm的至少一个波长,约33%。
-
公开(公告)号:US12125659B2
公开(公告)日:2024-10-22
申请号:US17888168
申请日:2022-08-15
申请人: SiOnyx, LLC
IPC分类号: H01J31/50
CPC分类号: H01J31/507 , H01J2231/5016
摘要: Image intensifier systems incorporating a microchannel plate (MCP) and methods for producing the same are disclosed. In some examples, a device is disclosed that includes a first substrate having a radiation-receiving first surface and an opposed second surface through which electromagnetic radiation is transmitted. A second substrate is coupled to the first substrate to define a vacuum cavity therebetween. An electron-emitting photocathode is disposed within the vacuum cavity for generating electrons from electromagnetic radiation transmitted through the second surface. A microchannel plate is disposed within the vacuum cavity and defines microchannels extending from an input end to an output end. Each of the microchannels is configured to generate electrons in response to an electron generated by the photocathode being received through the input end of the respective microchannel. A phosphorescent layer also is disposed within the vacuum cavity and adjacent the output ends of the microchannels of the microchannel plate.
-
公开(公告)号:US12080694B2
公开(公告)日:2024-09-03
申请号:US18340231
申请日:2023-06-23
申请人: SiOnyx, LLC
发明人: Jutao Jiang , Jeffrey McKee , Martin U. Pralle
IPC分类号: H01L25/16 , H01L27/146 , H04N23/56 , H04N25/70 , H04N25/71 , H04N25/771 , H04N25/13 , H04N25/131
CPC分类号: H01L25/167 , H01L27/1461 , H01L27/14612 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L27/14649 , H04N23/56 , H04N25/70 , H04N25/745 , H04N25/771 , H01L2924/0002 , H04N25/131 , H04N25/135 , H01L2924/0002 , H01L2924/00
摘要: A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
-
公开(公告)号:US20190222778A1
公开(公告)日:2019-07-18
申请号:US16363764
申请日:2019-03-25
申请人: SiOnyx, LLC
CPC分类号: H04N5/33 , G06K9/00604 , H04N7/183
摘要: Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation. The image processing module processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an external quantum efficiency of at least about 33% for at least one wavelength of greater than 800 nm.
-
-
-
-
-
-
-
-
-