公开(公告)号：US20060269690A1

公开(公告)日：2006-11-30

申请号：US11139311

申请日：2005-05-27

申请人： Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura ,  Shingo Ikeda ,  Nobuo Matsuki ,  Atsuki Fukazawa

发明人： Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura ,  Shingo Ikeda ,  Nobuo Matsuki ,  Atsuki Fukazawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/401 ,  B82Y30/00 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/7682 ,  H01L2221/1047

摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.

摘要翻译： 形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并且将在基板上产生的细颗粒沉积在反应器内部的上下电极之间，同时以约100℃/ cm以下的方式控制基板和上电极之间的温度梯度。

公开(公告)号：US20060105583A1

公开(公告)日：2006-05-18

申请号：US10990562

申请日：2004-11-17

申请人： Shingo Ikeda ,  Nobuo Matsuki ,  Yoshinori Morisada ,  Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura

发明人： Shingo Ikeda ,  Nobuo Matsuki ,  Yoshinori Morisada ,  Yukio Watanabe ,  Masaharu Shiratani ,  Kazunori Koga ,  Shota Nunomura

IPC分类号： H01L21/31

CPC分类号： C23C16/509 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31695

摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.

摘要翻译： 形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并沉积在放置在反应器内的衬底上产生的微粒。