摘要:
A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.
摘要:
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
摘要:
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
摘要:
A current-type converter including a DC power source, a current-type converter, a load and a converter control unit, the converter control unit controlling so as to cause as least two states among a powering conduction state for supplying power from said DC power source to said load within predetermined control periods of both a powering control mode and a regenerative control mode, a regenerative conduction state for regenerating power supplied from the load toward the DC power source, and a reflux conduction state for short-circuiting the output of the current-type converter and returning the circuit current of the load, and the converter control unit varying the period length of respective states.
摘要:
A dynamo-electric machine has a stator with a primary winding and a rotor with a field magnet and a shaft. the field magnet includes a first field magnet having different polarity magnetic poles sequentially arranged in a rotation direction and a second field magnet having different polarity magnetic poles sequentially arranged in a rotation direction. The machine further has a mechanism for shifting the first and the second field magnets in axial and rotation directions.
摘要:
A dynamo-electric machine has a stator with a primary winding and a rotor with a field magnet and a shaft. the field magnet includes a first field magnet having diferent polarity magnetic poles sequentially arranged in a rotation direction and a second field magnet having diferent polarity magnetic poles sequentially arranged in a rotation direction. The machine further has a mechanism for shifting the first and the second field magnets in axial and rotation directions.
摘要:
A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.
摘要:
A replicated controller and a fault recovery method therefor which can restore a faulty system to a normal state without interrupting operation of an equipment, even in an equipment controller performing processing with short operating periods.In a fault recovery method for a replicated controller, control data is divided into a plurality of blocks on the basis of dependency of the blocks, and a plurality of blocks are transferred in a sequential order of superiority of the dependency from the normally operating system to the faulty system in a period over a plurality of operating periods. BY this, even in an equipment controller performing processing at a short operating period, the system, in which failure is caused, can be restored into normal state without interrupting operation of the equipment.
摘要:
The object of the present invention is to provide a wind power generation system characterized by simplified field weakening of the magnetic flux of the permanent magnet of a shaft generator and a speed change control over an extensive range. In a wind power generation system comprising a main shaft where a vane is mounted, a generator connected to the main shaft for transmitting the rotating power of the vane, an inverter for converting the electric power of the generator, a controller for controlling the inverter, a means for controlling the pitch of the vane meeting the wind velocity requirements, a brake, and an anemometer/anemoscope; the present invention is characterized in that the rotor of the rotary machine comprising a permanent magnet is split to allow relative movement.
摘要:
A semiconductor electric power converter in accordance with the present invention comprises an arm consisting of an IGBT, a capacitor connected between a collector and a gate of said IGBT, and a gate circuit connected to the gate of said IGBT for controlling the switching operation of said IGBT, wherein a plurality of said arms connected in series are connected in parallel and each midpoint of said arms connected in of series is connected to a load. Thereby the impedance between the gate terminal of the IGBT and the gate circuit is decreased when the gate voltage is higher than the gate voltage command value or the impedance between the gate and the emitter of the IGBT is decreased when the collector voltage is high so that an electric charge stored in the gate is rapidly discharged.