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公开(公告)号:US07446406B2
公开(公告)日:2008-11-04
申请号:US11388987
申请日:2006-03-27
申请人: Takahito Mizuno , Ren Yamamoto , Shigeru Wakita
发明人: Takahito Mizuno , Ren Yamamoto , Shigeru Wakita
IPC分类号: H01L23/00
CPC分类号: H05K3/328 , H01L23/5385 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/451 , H01L2224/48137 , H01L2224/48139 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/13055 , H05K1/0263 , H05K1/0306 , H05K1/09 , H05K3/0061 , H05K3/243 , H05K2201/10272 , H05K2203/0285 , Y10T29/49126 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A circuit device includes a ceramic substrate, an Al wiring layer provided on the ceramic substrate, and a semiconductor device and a bus bar which are electrically connected to the wiring layer. On part of the wiring layer, a Ni layer is plated. Thus a coated region in which the wiring layer is coated with nickel having solder wetability superior to aluminum and an exposing region in which the wiring layer is exposed as viewed from above the ceramic substrate are provided. The semiconductor device is connected onto the Ni layer within the coated region through solder. The bus bar is ultrasonically bonded to the wiring layer within the exposing region as viewed from above the ceramic substrate. Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided.
摘要翻译: 电路器件包括陶瓷衬底,设置在陶瓷衬底上的Al布线层,以及与布线层电连接的半导体器件和母线。 在布线层的一部分上,镀Ni层。 因此,提供其中布线层涂覆有比铝更好的焊料润湿性的涂层区域和从陶瓷基板的上方观察布线层露出的曝光区域。 半导体器件通过焊料连接到涂覆区域内的Ni层上。 从陶瓷基板的上方观察,母线与曝光区域内的配线层超声波接合。 因此,提供了包括通过充分的接合强度结合到陶瓷基板的半导体器件和母线的电路器件及其制造方法。
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公开(公告)号:US20060220216A1
公开(公告)日:2006-10-05
申请号:US11388987
申请日:2006-03-27
申请人: Takahito Mizuno , Ren Yamamoto , Shigeru Wakita
发明人: Takahito Mizuno , Ren Yamamoto , Shigeru Wakita
CPC分类号: H05K3/328 , H01L23/5385 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/451 , H01L2224/48137 , H01L2224/48139 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/13055 , H05K1/0263 , H05K1/0306 , H05K1/09 , H05K3/0061 , H05K3/243 , H05K2201/10272 , H05K2203/0285 , Y10T29/49126 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A circuit device includes a ceramic substrate, an Al wiring layer provided on the ceramic substrate, and a semiconductor device and a bus bar which are electrically connected to the wiring layer. On part of the wiring layer, a Ni layer is plated. Thus a coated region in which the wiring layer is coated with nickel having solder wetability superior to aluminum and an exposing region in which the wiring layer is exposed as viewed from above the ceramic substrate are provided. The semiconductor device is connected onto the Ni layer within the coated region through solder. The bus bar is ultrasonically bonded to the wiring layer within the exposing region as viewed from above the ceramic substrate. Thus, the circuit device including the semiconductor device and the bus bar that are bonded to the ceramic substrate by sufficient bonding strength and its manufacturing method are provided.
摘要翻译: 电路器件包括陶瓷衬底,设置在陶瓷衬底上的Al布线层,以及与布线层电连接的半导体器件和母线。 在布线层的一部分上,镀Ni层。 因此,提供其中布线层涂覆有比铝更好的焊料润湿性的涂层区域和从陶瓷基板的上方观察布线层露出的曝光区域。 半导体器件通过焊料连接到涂覆区域内的Ni层上。 从陶瓷基板的上方观察,母线与曝光区域内的配线层超声波接合。 因此,提供了包括通过充分的接合强度结合到陶瓷基板的半导体器件和母线的电路器件及其制造方法。
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公开(公告)号:US06302941B1
公开(公告)日:2001-10-16
申请号:US09556569
申请日:2000-04-24
申请人: Kenji Oya , Shigeru Wakita , Yasukazu Hayasaka , Hajime Wakai
发明人: Kenji Oya , Shigeru Wakita , Yasukazu Hayasaka , Hajime Wakai
IPC分类号: C21B500
CPC分类号: G01K11/3213 , C21B5/006 , C21B7/24 , C21B2300/04 , G01K1/125 , G01K11/3206
摘要: A method for producing a molten iron in a blast furnace comprises the steps of: preparing an optical fiber covered with a metallic tube; measuring a temperature of the molten iron flow discharged from a tap hole of the blast furnace by means of making use of a metallic tube covered by the optical fiber to obtain an information of the temperature of the molten iron; and controlling a heat conditions of the blast furnace, based on the obtained information of the temperature of the molten iron. Controlling a heat conditions is achieved by using a heat conditions estimation model, and by inferring a level and a transition of the heat conditions in the furnace.
摘要翻译: 在高炉中生产铁水的方法包括以下步骤:制备覆盖有金属管的光纤; 通过利用由光纤覆盖的金属管测量从高炉的出风孔排出的铁水流的温度,得到铁水的温度信息; 并根据得到的铁水温度信息来控制高炉的加热条件。 通过使用热条件估计模型以及推断炉中的热条件的水平和转变来实现控制热条件。
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