公开(公告)号：US09122114B2

公开(公告)日：2015-09-01

申请号：US13475622

申请日：2012-05-18

Applicant: Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

Inventor： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC: H01L21/00 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1335 ,  G02F1/1368 ,  G02F1/1343

CPC classification number: G02F1/1362 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2201/48 ,  H01L27/1288

Abstract: An embodiment of the disclosed technology provides a method of manufacturing an array substrate, including: a first mask process of forming an inorganic material protrusion on a base substrate; a second mask process of forming a reflective region pattern, a gate line, a gate electrode branched from the gate line, and a common electrode; a third mask process of forming an active island and a data line formed and forming a source electrode connected to the data line and a drain electrode on the active island and a channel; a fourth mask process of forming an insulation material layer, treating the insulation material layer to form a planarization layer, and forming a through hole above the drain electrode; and a fifth mask process of forming a pixel electrode and connected to the drain electrode via the through hole in a reflective region.

Abstract translation: 所公开的技术的一个实施例提供一种制造阵列基板的方法，包括：在基底基板上形成无机材料突起的第一掩模工艺; 形成反射区域图案的第二掩模工艺，栅极线，从栅极线分支的栅电极和公共电极; 形成有源岛和数据线的第三掩模处理，并且形成连接到有源岛上的数据线和漏电极的源电极和沟道; 形成绝缘材料层的第四掩模工艺，处理绝缘材料层以形成平坦化层，以及在漏电极之上形成通孔; 以及形成像素电极并通过反射区域中的通孔连接到漏电极的第五掩模处理。

公开(公告)号：US08900776B2

公开(公告)日：2014-12-02

申请号：US13347865

申请日：2012-01-11

Applicant: Guanbao Hui ,  Seungjin Choi ,  Feng Zhang ,  Jianshe Xue

Inventor： Guanbao Hui ,  Seungjin Choi ,  Feng Zhang ,  Jianshe Xue

IPC: G03F1/76 ,  G03F1/68 ,  H01L27/12

CPC classification number: G03F1/76 ,  G03F1/50 ,  H01L27/1288

Abstract: An embodiment of the disclosed technology provides a mask plate for photolithography process comprising a first pattern region, a second pattern region having a different exposure level from that of the first pattern region, and a redundant pattern provided between the first pattern region and the second pattern region, wherein the redundant pattern is configured for forming a redundant photoresist pattern so as to prevent developer diffusion at different concentrations across the photoresist redundant pattern.

Abstract translation: 所公开技术的实施例提供了一种用于光刻工艺的掩模板，其包括第一图案区域，具有与第一图案区域不同的曝光水平的第二图案区域以及设置在第一图案区域和第二图案之间的冗余图案 区域，其中所述冗余图案被配置用于形成冗余光刻胶图案，以便阻止在所述光致抗蚀剂冗余图案上的不同浓度的显影剂扩散。

公开(公告)号：US20140167031A1

公开(公告)日：2014-06-19

申请号：US13984090

申请日：2012-12-13

Applicant: Seungjin Choi ,  Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo

Inventor： Seungjin Choi ,  Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/7869 ,  G02F1/134363 ,  G02F2001/134372 ,  G02F2001/136231 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1203 ,  H01L27/1225

Abstract: A method for fabricating array substrate, an array substrate and a display device. The method for fabricating the array substrate comprises forming a thin film transistor, a first transparent electrode (14) and a second transparent electrode (19), wherein a multi dimensional electric field is created by the first transparent electrode (17) and the second transparent electrode (19), wherein forming the first transparent electrode (17) comprises: forming a metal oxide film presenting semiconductor properties; forming the first transparent electrode (17) by subjecting a portion of the metal oxide film to metallization treatment, and forming a semiconductor active layer (141) from a portion which is not subjected to the metallization treatment.

Abstract translation: 阵列基板，阵列基板和显示装置的制造方法。 制造阵列基板的方法包括形成薄膜晶体管，第一透明电极（14）和第二透明电极（19），其中由第一透明电极（17）和第二透明电极（17）产生多维电场 电极（19），其中形成所述第一透明电极（17）包括：形成呈现半导体特性的金属氧化物膜; 通过对金属氧化物膜的一部分进行金属化处理来形成第一透明电极（17），并且从未进行金属化处理的部分形成半导体活性层（141）。

公开(公告)号：US08558231B2

公开(公告)日：2013-10-15

申请号：US12724047

申请日：2010-03-15

Applicant: Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

Inventor： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC: H01L31/20

CPC classification number: H01L27/127 ,  H01L27/1248 ,  H01L27/1288

Abstract: The present invention provides an array substrate comprising: a substrate, having a thin film transistor (TFT) formed thereupon, the TFT having a gate electrode, a source electrode and a drain electrode; a first metal layer, formed on the substrate, and comprising a gate line and the gate electrode of the TFT; a first insulating layer, covering the first metal layer and the substrate; a semiconductor layer, an ohmic contact layer, and a second metal layer, which are sequentially formed on the first insulating layer; a second insulating layer, covering the semiconductor layer, the ohmic contact layer, and the second metal layer; a pixel electrode, provided on the second insulating layer and is connected to the drain electrode. The second metal layer further comprises an etch-blocking pattern in the peripheral area of the pixel electrode within the overlapping region between the pixel electrode and the first metal layer.

Abstract translation: 本发明提供了一种阵列基板，包括：具有形成在其上的薄膜晶体管（TFT）的基板，所述TFT具有栅电极，源电极和漏电极; 第一金属层，形成在所述基板上，并且包括所述TFT的栅极线和所述栅电极; 覆盖所述第一金属层和所述基板的第一绝缘层; 半导体层，欧姆接触层和第二金属层，其顺序地形成在所述第一绝缘层上; 覆盖半导体层，欧姆接触层和第二金属层的第二绝缘层; 像素电极，设置在第二绝缘层上并连接到漏电极。 第二金属层还包括在像素电极和第一金属层之间的重叠区域内的像素电极的周边区域中的蚀刻阻挡图案。

公开(公告)号：US08460982B2

公开(公告)日：2013-06-11

申请号：US13499353

申请日：2011-04-26

Applicant: Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

Inventor： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC: H01L21/84

Abstract: A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.

公开(公告)号：US20100075451A1

公开(公告)日：2010-03-25

申请号：US12561344

申请日：2009-09-17

Applicant: Seongyeol YOO ,  Youngsuk SONG ,  Seungjin CHOI

Inventor： Seongyeol YOO ,  Youngsuk SONG ,  Seungjin CHOI

IPC: H01L21/28 ,  H01L21/306

CPC classification number: H01L29/78603 ,  H01L27/1218 ,  H01L29/66765

Abstract: The present invention discloses a method for manufacturing thin film structure, which comprises the following steps: providing a substrate having a first recess and a second recess formed therein with the first recess being deeper than the second recess; depositing a first material layer and a second material layer of different thicknesses successively on the substrate; and grinding the substrate so that a flat upper surface is formed and the first material layer and the second material layer are remained in the first recess while only the first material layer is remained in the second recess. The present invention also discloses a method for manufacturing fringe field switching type liquid crystal display array substrate. With the present invention, it is possible to make the upper surface flat while forming patterns on two layers of thin films respectively by using a single mask.

Abstract translation: 本发明公开了一种制造薄膜结构的方法，包括以下步骤：提供具有第一凹部和形成在其中的第二凹部的基板，其中第一凹部比第二凹部更深; 在衬底上依次沉积不同厚度的第一材料层和第二材料层; 并且研磨所述基板，使得形成平坦的上表面，并且所述第一材料层和所述第二材料层保留在所述第一凹部中，同时仅所述第一材料层保留在所述第二凹部中。 本发明还公开了一种用于制造条纹场开关型液晶显示阵列基板的方法。 利用本发明，可以通过使用单个掩模分别在两层薄膜上形成图案而使上表面平坦。

公开(公告)号：US09501770B2

公开(公告)日：2016-11-22

申请号：US13264633

申请日：2010-04-15

Applicant: Wonjun Lee ,  Seungjin Choi ,  Dongphil Lim ,  Hongkeun Ji ,  Dohyun Jang ,  Sangsoo Oh ,  Hoon Seong

Inventor： Wonjun Lee ,  Seungjin Choi ,  Dongphil Lim ,  Hongkeun Ji ,  Dohyun Jang ,  Sangsoo Oh ,  Hoon Seong

IPC: G06Q20/00 ,  G06Q20/32 ,  G06Q20/06 ,  G06Q20/10 ,  G06Q20/36 ,  H04M15/00 ,  H04M17/00 ,  H04W4/24

CPC classification number: G06Q20/32 ,  G06Q20/0655 ,  G06Q20/105 ,  G06Q20/363 ,  G06Q20/3672 ,  H04M15/00 ,  H04M15/68 ,  H04M17/20 ,  H04M17/202 ,  H04M17/204 ,  H04M17/205 ,  H04M17/206 ,  H04W4/24

Abstract: E-money recharge service system, e-money recharge server, and recharge method are disclosed. The e-money recharge service system includes: recipient terminal for receiving and storing e-money; payer terminal for performing settlement approval procedure for payment of e-money loaded into recipient terminal; and money recharge server for receiving input of money information including information on the whole or part of identification of recipient terminal, identification of payer terminal, recharge amount, and methods of payment from subscriber to money recharge service, for the subscriber acting money payer recharging the recipient terminal with e-money corresponding to recharge amount and making payment for settling recharge amount of money through the methods of payment, and for the subscriber acting money recipient transmitting message of inquiry to payer terminal of settlement approval of recharge amount and recharging recipient terminal with e-money corresponding to recharge amount if settlement approval is issued by payer terminal.

Abstract translation: 披露电子货币充值服务系统，电子货币充值服务器和充值方式。 电子货币充值服务系统包括：接收和存储电子货币的接收方; 付款人终端执行结算批准程序，用于支付加载到接收方终端的电子货币; 以及用于从订户到货币充值服务接收输入货币信息的信息，包括关于接收方终端的识别，付款人终端的识别，充值金额以及付款方式的信息的输入的货币充值服务器， 收款终端，电子货币对应于充值金额，并通过付款方式支付结算充值金额，并为用户代理货币收款人发送查询付款人付款人终端的充值金额和充值接收方终端的付款人 付款人终端发出结算许可的电子货币对应的充值金额。

公开(公告)号：US20140054581A1

公开(公告)日：2014-02-27

申请号：US13878475

申请日：2012-12-23

Applicant: Youngsuk Song ,  Guanbao Hui ,  Seongyeol Yoo ,  Seungjin Choi ,  Feng Zhang

Inventor： Youngsuk Song ,  Guanbao Hui ,  Seongyeol Yoo ,  Seungjin Choi ,  Feng Zhang

IPC: H01L27/12

CPC classification number: H01L27/124 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/136209 ,  G02F2001/134318 ,  G02F2001/134372 ,  G02F2001/136222 ,  G02F2203/01 ,  G02F2203/02 ,  H01L27/1259

Abstract: Embodiments of the invention relate to an array substrate, a manufacturing method thereof and a display device comprising the array substrate. The array substrate comprises a gate line and a data line which define a pixel region, the pixel region comprises a thin film transistor region and an electrode pattern region, a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode and a passivation layer are formed in the thin film transistor region, the gate insulation layer, a pixel electrode, the passivation layer and a common electrode are formed in the electrode pattern region, and the common electrode and the pixel electrode form a multi-dimensional electric field. A color resin layer is formed between the gate insulation layer and the pixel electrode.

Abstract translation: 本发明的实施例涉及阵列基板，其制造方法和包括阵列基板的显示装置。 阵列基板包括栅极线和限定像素区域的数据线，像素区域包括薄膜晶体管区域和电极图案区域，栅极电极，栅极绝缘层，有源层，源极电极， 漏电极和钝化层形成在薄膜晶体管区域中，栅极绝缘层，像素电极，钝化层和公共电极形成在电极图案区域中，并且公共电极和像素电极形成多个 维电场。 在栅极绝缘层和像素电极之间形成着色树脂层。

公开(公告)号：US08603843B2

公开(公告)日：2013-12-10

申请号：US13381157

申请日：2011-04-26

Applicant: Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

Inventor： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC: H01L21/00

CPC classification number: H01L27/1288 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/134372 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/124

Abstract: Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including source electrodes, drain electrodes, data lines and pixel electrodes; forming a semiconductor film and patterning it to form a pattern of the impurity-doped semiconductor layer and a pattern of the semiconductor layer including TFT channels; forming an insulating film and a second metal film, and patterning the stack of the films to form patterns including connection holes of the data lines in a PAD region, gate lines, gate electrodes and common electrode lines; forming a second transparent conductive film, and patterning it to form patterns including the common electrode.

Abstract translation: 公开了一种用于制造FFS型TFT-LCD的阵列基板的方法，包括以下步骤：依次在透明基板上形成第一透明导电膜，第一金属膜和杂质掺杂半导体膜，然后将 堆叠的膜以形成包括源电极，漏电极，数据线和像素电极的图案; 形成半导体膜并对其进行构图以形成杂质掺杂半导体层的图案和包括TFT沟道的半导体层的图案; 形成绝缘膜和第二金属膜，并且图案化所述膜的堆叠以形成包括PAD区域，栅极线，栅电极和公共电极线中的数据线的连接孔的图案; 形成第二透明导电膜，并将其图形化以形成包括公共电极的图案。

公开(公告)号：US20120107982A1

公开(公告)日：2012-05-03

申请号：US13381157

申请日：2011-04-26

Applicant: Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

Inventor： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC: H01L21/336

CPC classification number: H01L27/1288 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/134372 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/124

Abstract: Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including source electrodes, drain electrodes, data lines and pixel electrodes; forming a semiconductor film and patterning it to form a pattern of the impurity-doped semiconductor layer and a pattern of the semiconductor layer including TFT channels; forming an insulating film and a second metal film, and patterning the stack of the films to form patterns including connection holes of the data lines in a PAD region, gate lines, gate electrodes and common electrode lines; forming a second transparent conductive film, and patterning it to form patterns including the common electrode.

Abstract translation: 公开了一种用于制造FFS型TFT-LCD的阵列基板的方法，包括以下步骤：依次在透明基板上形成第一透明导电膜，第一金属膜和杂质掺杂半导体膜，然后将 堆叠的膜以形成包括源电极，漏电极，数据线和像素电极的图案; 形成半导体膜并对其进行构图以形成杂质掺杂半导体层的图案和包括TFT沟道的半导体层的图案; 形成绝缘膜和第二金属膜，并且图案化所述膜的堆叠以形成包括PAD区域，栅极线，栅电极和公共电极线中的数据线的连接孔的图案; 形成第二透明导电膜，并将其图形化以形成包括公共电极的图案。