公开(公告)号：US08416329B2

公开(公告)日：2013-04-09

申请号：US12880239

申请日：2010-09-13

申请人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

发明人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

IPC分类号： H04N5/335 ,  H04N3/14

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/37457

摘要： Unit cells each having a plurality of photodiodes 101a and 101b, a plurality of transfer MOSFETs 102a and 102b provided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFET 104 for amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiode 101b and trapping regions 130, 134, 135 and 132 are for trapping excessive carriers from the photodiode 101b are provided between the photodiode 101b and the plural photodiodes, respectively.

摘要翻译： 每个具有多个光电二极管101a和101b的单元单元，分别对应于多个光电二极管设置的多个传输MOSFET 102a和102b，以及用于放大和输出从多个二极管读出的信号的公共放大MOSFET 104布置 并且在光电二极管101b周围设置多个光电二极管，并且分别设置在光电二极管101b和多个光电二极管之间的用于捕获来自光电二极管101b的过多载流子的捕获区域130,134,135和132。

公开(公告)号：US20110175150A1

公开(公告)日：2011-07-21

申请号：US13052216

申请日：2011-03-21

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

摘要翻译： 本发明使用包括多个像素的图像拾取装置，所述多个像素分别包括用于将入射光转换成信号电荷的光电转换单元，用于放大由光电转换单元产生的信号电荷的放大单元和用于传送信号的转移单元 由光电转换单元向放大单元充电，其中光电转换单元由第一导电型第一半导体区和第二导电型第二半导体区和第二导电型第三半导体区形成 形成在第一像素的光电转换单元与与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上，第一导电型第四半导体区域的杂质浓度高于 第一半导体区域形成在光电转换单元之间 光电转换单元和第三半导体层之间包括第三半导体区域和形成在比第四半导体区域更深的位置并且具有高于第一半导体区域的杂质浓度的第一导电型第五半导体区域 地区。

公开(公告)号：US07812873B2

公开(公告)日：2010-10-12

申请号：US11212676

申请日：2005-08-29

申请人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

发明人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

IPC分类号： H04N5/335 ,  H04N3/14

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/37457

摘要： Unit cells each having a plurality of photodiodes 101a and 101b, a plurality of transfer MOSFETs 102a and 102b provided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFET 104 for amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiode 101b and trapping regions 130, 134, 135 and 132 are for trapping excessive carriers from the photodiode 101b are provided between the photodiode 101b and the plural photodiodes, respectively.

摘要翻译： 每个具有多个光电二极管101a和101b的单元单元，分别对应于多个光电二极管设置的多个传输MOSFET 102a和102b，以及用于放大和输出从多个二极管读出的信号的公共放大MOSFET 104布置 并且在光电二极管101b周围设置多个光电二极管，并且分别设置在光电二极管101b和多个光电二极管之间的用于捕获来自光电二极管101b的过多载流子的捕获区域130,134,135和132。

公开(公告)号：US20060044439A1

公开(公告)日：2006-03-02

申请号：US11212676

申请日：2005-08-29

申请人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

发明人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/37457

摘要： Unit cells each having a plurality of photodiodes 101a and 101b, a plurality of transfer MOSFETs 102a and 102b provided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFET 104 for amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiode 101b and trapping regions 130, 134, 135 and 132 are for trapping excessive carriers from the photodiode 101b are provided between the photodiode 101b and the plural photodiodes, respectively.

摘要翻译： 每个具有多个光电二极管101a和101b的单元电池，分别对应于多个光电二极管设置的多个传输MOSFET 102a和102b以及用于放大和输出从多个光电二极管读出的信号的公共放大MOSFET 104 的二极管被二维布置，并且在光电二极管101b周围设置多个光电二极管，并且用于捕获来自光电二极管101b的过量载流子的俘获区域130,134,135和132设置在光电二极管101b和多个光电二极管 ， 分别。

公开(公告)号：US20060043440A1

公开(公告)日：2006-03-02

申请号：US11214806

申请日：2005-08-31

申请人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

发明人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

IPC分类号： H01L31/062

CPC分类号： H01L27/14605 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14806 ,  H01L27/14812 ,  H04N3/155 ,  H04N3/1568 ,  H04N5/335 ,  H04N5/3452 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

摘要： An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

摘要翻译： 本发明的目的是防止像素之间的灵敏度差异。 配置有分别包括多个光电二极管101A和101B的多个单元电池，分别对应于多个光电二极管布置的多个转移MOSFET 102A和102B以及放大并输出从多个光电二极管读取的信号的公共MOSFET 104。 由对应于光电二极管的光电二极管和传输MOSFET组成的单元内的每一对具有相对于彼此的平移对称性。 在单元电池内，包括一个复位MOSFET和选择MOSFET。

公开(公告)号：US20120280295A1

公开(公告)日：2012-11-08

申请号：US13478871

申请日：2012-05-23

申请人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

发明人： Toru Koizumi ,  Seiichiro Sakai ,  Masanori Ogura

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035281 ,  H01L31/03529

摘要： An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

摘要翻译： 图像拾取装置包括各自包括光电转换单元和转印单元的像素。 光电转换单元包括第一导电型第一半导体区和第二导电型第二半导体区。 第二导电型第三半导体区域形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上。 在光电转换单元和第三半导体区域之间形成具有高于第一半导体区域的杂质浓度的杂质浓度的第一导电型第四半导体区域。 具有比第一半导体区域高的杂质浓度的第一导电型第五半导体区域配置在光电转换单元和第三半导体区域之间，并且布置在比第四半导体区域更深的位置。

公开(公告)号：US20120181590A1

公开(公告)日：2012-07-19

申请号：US13371738

申请日：2012-02-13

申请人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

发明人： Akira Okita ,  Masanori Ogura ,  Seiichiro Sakai ,  Takanori Watanabe

IPC分类号： H01L31/0224

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14641

摘要： A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements, and that provides a high sensitivity and a low dark current even in a high-speed readout operation, includes a well formed on a wafer, and semiconductor layers formed in the well to constitute photodiodes. A well contact is formed between the semiconductor layers. Element isolation regions are provided between the well contact and the semiconductor layers, and channel stop layers are provided under the element isolation regions. A conductive layer is provided on the element isolation region, and a side wall is provided on a side face of the conductive layer. A distance a between an end of the element isolation region and the conductive layer, a width b of the side wall and a device isolation width c satisfy a relation c>a≧b.

摘要翻译： 即使在高速读出操作中，相邻的光电转换元件之间的暗电流几乎或没有差异的固态图像拾取装置也提供了高灵敏度和低暗电流，包括在晶片上形成的阱， 以及在阱中形成的构成光电二极管的半导体层。 在半导体层之间形成阱接触。 在阱接触和半导体层之间提供元件隔离区，并且在元件隔离区之下提供通道阻挡层。 导电层设置在元件隔离区上，侧壁设置在导电层的侧面上。 元件隔离区域的端部与导电层之间的距离a，侧壁的宽度b和器件隔离宽度c满足关系c>a≥b。

公开(公告)号：US20100328510A1

公开(公告)日：2010-12-30

申请号：US12880239

申请日：2010-09-13

申请人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

发明人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/3575 ,  H04N5/3591 ,  H04N5/37457

摘要： Unit cells each having a plurality of photodiodes 101a and 101b, a plurality of transfer MOSFETs 102a and 102b provided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFET 104 for amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiode 101b and trapping regions 130, 134, 135 and 132 are for trapping excessive carriers from the photodiode 101b are provided between the photodiode 101b and the plural photodiodes, respectively.

摘要翻译： 每个具有多个光电二极管101a和101b的单元单元，分别对应于多个光电二极管设置的多个传输MOSFET 102a和102b，以及用于放大和输出从多个二极管读出的信号的公共放大MOSFET 104布置 并且在光电二极管101b周围设置多个光电二极管，并且分别设置在光电二极管101b和多个光电二极管之间的用于捕获来自光电二极管101b的过多载流子的捕获区域130,134,135和132。

公开(公告)号：US20100060763A1

公开(公告)日：2010-03-11

申请号：US12619957

申请日：2009-11-17

申请人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

发明人： Hiroki Hiyama ,  Masanori Ogura ,  Seiichiro Sakai

IPC分类号： H04N5/335

CPC分类号： H01L27/14605 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14806 ,  H01L27/14812 ,  H04N3/155 ,  H04N3/1568 ,  H04N5/335 ,  H04N5/3452 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

摘要： An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

摘要翻译： 本发明的目的是防止像素之间的灵敏度差异。 设置有分别包括多个光电二极管101A和101B的多个单电池，分别对应于多个光电二极管布置的多个传输MOSFET 102A和102B以及放大并输出从多个光电二极管读取的信号的公共MOSFET 104。 由对应于光电二极管的光电二极管和传输MOSFET组成的单元内的每一对具有相对于彼此的平移对称性。 在单元电池内，包括一个复位MOSFET和选择MOSFET。

公开(公告)号：US20060027843A1

公开(公告)日：2006-02-09

申请号：US11190964

申请日：2005-07-28

申请人： Masanori Ogura ,  Fumihiro Inui ,  Toru Koizumi ,  Seiichiro Sakai

发明人： Masanori Ogura ,  Fumihiro Inui ,  Toru Koizumi ,  Seiichiro Sakai

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L31/035236

摘要： The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.

摘要翻译： 本发明是为了抑制光电二极管的漏电流和漏电流的不均匀性。 在具有比形成在p型半导体中形成的n型半导体区域的光电二极管和相邻元件之间形成的元件隔离绝缘膜中的浓度高的沟道停止区域的光电转换装置中， 形成在元件隔离绝缘膜下面的布线层和形成在元件隔离绝缘膜上的部分中的布线层，与光电二极管相邻的元件隔离绝缘膜上的布线层在有效区域和电位中被统一， 并且在穿过元件隔离绝缘膜的与布线层相对的区域的至少一部分中提供了比沟道停止区域中更高浓度的p型暗电流减小区域。