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    METHOD OF GENERATING PLASMA IN REMOTE PLASMA SOURCE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME METHOD
    1.
    发明申请
    METHOD OF GENERATING PLASMA IN REMOTE PLASMA SOURCE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME METHOD 有权
    在远程等离子体源中产生等离子体的方法和使用相同方法制备半导体器件的方法

    公开(公告)号：US20160013064A1

    公开(公告)日：2016-01-14

    申请号：US14797508

    申请日：2015-07-13

    Applicant: Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

    Inventor： Gon-jun Kim ,  Sam Hyungsam Kim ,  Sangheon Lee

    IPC: H01L21/3065 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065

    Abstract: Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching process and minimize damage to layers. The method of generating plasma includes generating first plasma by supplying at least one first process gas into a first remote plasma source (RPS) and applying first energy having a first power at a first duty ratio, and generating second plasma by supplying at least one second process gas into a second RPS and applying second energy having a second power at a second duty ratio.

    Abstract translation: 提供了一种产生等离子体的方法和一种制造包括该方法的半导体器件的方法，其可以提高蚀刻工艺中的选择性并最小化对层的损害。 产生等离子体的方法包括：通过将至少一个第一工艺气体供应到第一远程等离子体源（RPS）中并且以第一占空比施加具有第一功率的第一能量并产生第二等离子体来产生第一等离子体，通过提供至少一个第二等离子体 将气体处理成第二RPS并且以第二占空比施加具有第二功率的第二能量。

    Critical dimension reduction and roughness control
    4.
    发明授权
    Critical dimension reduction and roughness control 有权
    关键尺寸减小和粗糙度控制

    公开(公告)号：US08614149B2

    公开(公告)日：2013-12-24

    申请号：US13586571

    申请日：2012-08-15

    Applicant: Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S. M. Reza Sadjadi

    Inventor： Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S. M. Reza Sadjadi

    IPC: H01L21/311

    CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

    Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

    Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。

    CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL
    5.
    发明申请
    CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 有权
    关键尺寸减少和粗糙度控制

    公开(公告)号：US20120309201A1

    公开(公告)日：2012-12-06

    申请号：US13586571

    申请日：2012-08-15

    Applicant: Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S.M. Reza Sadjadi

    Inventor： Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S.M. Reza Sadjadi

    IPC: H01L21/302

    CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

    Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

    Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

    Critical dimension reduction and roughness control
    6.
    发明授权
    Critical dimension reduction and roughness control 失效
    关键尺寸减小和粗糙度控制

    公开(公告)号：US07695632B2

    公开(公告)日：2010-04-13

    申请号：US11142509

    申请日：2005-05-31

    Applicant: Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S.M. Reza Sadjadi

    Inventor： Sangheon Lee ,  Dae-Han Choi ,  Jisoo Kim ,  Peter Cirigliano ,  Zhisong Huang ,  Robert Charatan ,  S.M. Reza Sadjadi

    IPC: H01L21/302

    CPC classification number: C23F4/00 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

    Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

    Abstract translation: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。 在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。 在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。 控制层的开口打开，控制层突破性化学。 特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

    Method of forming dual damascene structure
    7.
    发明授权
    Method of forming dual damascene structure 有权
    形成双镶嵌结构的方法

    公开(公告)号：US07098130B1

    公开(公告)日：2006-08-29

    申请号：US11016304

    申请日：2004-12-16

    Applicant: Ji Soo Kim ,  Sangheon Lee ,  S. M. Reza Sadjadi

    Inventor： Ji Soo Kim ,  Sangheon Lee ,  S. M. Reza Sadjadi

    IPC: H01L21/4763

    CPC classification number: H01L21/76808 ,  H01L21/76813

    Abstract: A method for forming dual damascene features in a dielectric layer. Vias are partially etched in the dielectric layer. A trench pattern mask is formed over the dielectric layer. Trenches are partially etched in the dielectric layer. The trench pattern mask is stripped. The dielectric layer is further etched to complete etch the vias and the trenches in the dielectric layer.

    Abstract translation: 一种在介电层中形成双镶嵌特征的方法。 在电介质层中部分地蚀刻通孔。 在电介质层上形成沟槽图案掩模。 在介电层中部分蚀刻沟槽。 剥去沟槽图案掩模。 进一步蚀刻电介质层以完成蚀刻介电层中的通路和沟槽。

    OPERATING METHOD FOR WASHING MACHINE
    10.
    发明申请
    OPERATING METHOD FOR WASHING MACHINE 审中-公开
    洗衣机操作方法

    公开(公告)号：US20120180228A1

    公开(公告)日：2012-07-19

    申请号：US13349841

    申请日：2012-01-13

    Applicant: Sangheon LEE ,  Heakyung Yoo ,  Deokkyu Kim ,  Sunku Kwon ,  Jaewon Chang ,  Byungkeol Choi ,  Hyojun Kim ,  Sunho Lee ,  Bonkwon Ko ,  Hangil Park

    Inventor： Sangheon LEE ,  Heakyung Yoo ,  Deokkyu Kim ,  Sunku Kwon ,  Jaewon Chang ,  Byungkeol Choi ,  Hyojun Kim ,  Sunho Lee ,  Bonkwon Ko ,  Hangil Park

    IPC: D06L1/20

    CPC classification number: D06F13/02 ,  D06F35/006 ,  D06F37/12

    Abstract: The present invention relates to an operation method of a washing machine for controlling the rotation of a pulsator to enhance cleaning performance, there is provided a method of operating a washing machine having a pulsator rotatably provided in a tub, and the method may include a first cleaning mode having a first process of rotating the pulsator in one direction at a first angle and then rotating it in the other direction at a second angle around the rotation shaft; and a second process of rotating the pulsator in the one direction at a third angle and then rotating it in the other direction at a fourth angle around the rotation shaft, wherein the first angle is greater than the third angle, and the second angle is greater than the fourth angle, and the second angle is greater than the third angle.

    Abstract translation: 本发明涉及一种用于控制波轮的旋转以提高清洁性能的洗衣机的操作方法，提供了一种操作具有可旋转地设置在桶中的脉动器的洗衣机的方法，并且该方法可以包括第一 清洁模式具有第一过程，其以一个第一角度在一个方向上旋转波轮，然后以另一个方向围绕旋转轴以第二角旋转; 以及第二过程，其使所述波轮在所述一个方向上以第三角度旋转，然后以围绕所述旋转轴的第四角度沿另一方向旋转，其中所述第一角度大于所述第三角度，并且所述第二角度较大 而第二角度大于第三角度。

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