公开(公告)号：US09905658B2

公开(公告)日：2018-02-27

申请号：US14090327

申请日：2013-11-26

Applicant: Darrell G. Hill ,  Stephen H. Kilgore ,  Craig A. Gaw

Inventor： Darrell G. Hill ,  Stephen H. Kilgore ,  Craig A. Gaw

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/49 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66462 ,  H01L29/7787

Abstract: An embodiment of a transistor includes a semiconductor substrate, spaced-apart source and drain electrodes coupled to the semiconductor substrate, a gate electrode coupled to the semiconductor substrate between the source and drain electrodes, a dielectric layer over the gate electrode and at least a portion of the semiconductor substrate, and a field plate structure over the dielectric layer, wherein the field plate structure includes a gold-containing material and one or more migration inhibiting materials.

公开(公告)号：US20150144953A1

公开(公告)日：2015-05-28

申请号：US14090327

申请日：2013-11-26

Applicant: DARRELL G. HILL ,  STEPHEN H. KILGORE ,  CRAIG A. GAW

Inventor： DARRELL G. HILL ,  STEPHEN H. KILGORE ,  CRAIG A. GAW

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66462 ,  H01L29/7787

Abstract: An embodiment of a transistor includes a semiconductor substrate, spaced-apart source and drain electrodes coupled to the semiconductor substrate, a gate electrode coupled to the semiconductor substrate between the source and drain electrodes, a dielectric layer over the gate electrode and at least a portion of the semiconductor substrate, and a field plate structure over the dielectric layer, wherein the field plate structure includes a gold-containing material and one or more migration inhibiting materials.

Abstract translation: 晶体管的一个实施例包括半导体衬底，耦合到半导体衬底的间隔开的源电极和漏电极，耦合到源电极和漏电极之间的半导体衬底的栅电极，栅极上的电介质层和至少一部分 以及介电层上的场板结构，其中场板结构包括含金材料和一种或多种迁移抑制材料。