Plasma immersion ion milling apparatus and method
    1.
    发明授权
    Plasma immersion ion milling apparatus and method 有权
    等离子浸渍离子研磨装置及方法

    公开(公告)号:US09190239B2

    公开(公告)日:2015-11-17

    申请号:US13265051

    申请日:2010-10-27

    摘要: Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber.

    摘要翻译: 公开了一种用于使用加速离子对各种工件进行低温等离子体浸没处理的装置和方法,其中低温等离子体分布在放置在腔室中的圆柱形工件周围,工件由包括多槽的壳体封闭 提取电极以将工件与等离子体隔离,并且对工件和电极施加足以引起溅射的负电位,使得来自等离子体的离子在形成在提取电极和等离子体之间的护套内被加速,通过 电极并轰击工件,从而抛光工件的表面。 该装置和方法对于大的圆柱形基底,特别是用于微或纳米图案转印的基底的表面平滑是有效的。 该方法包括等离子体清洗,表面活化,表面平滑化,干蚀刻,沉积,等离子体浸入离子注入和在单室或多室内的沉积。