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    Method and chamber for inductively coupled plasma processing for cylinderical material with three-dimensional surface
    2.
    发明授权
    Method and chamber for inductively coupled plasma processing for cylinderical material with three-dimensional surface 有权
    用于具有三维表面的圆柱形材料的电感耦合等离子体处理方法和室

    公开(公告)号：US08591711B2

    公开(公告)日：2013-11-26

    申请号：US13054180

    申请日：2008-09-29

    申请人： Sung Il Chung ,  Sergey Alexandrovich Nikiforov ,  Hyeon Seok Oh ,  Pan Kyeom Kim ,  Hyeon Taeg Gim ,  Jeong Woo Jeon

    发明人： Sung Il Chung ,  Sergey Alexandrovich Nikiforov ,  Hyeon Seok Oh ,  Pan Kyeom Kim ,  Hyeon Taeg Gim ,  Jeong Woo Jeon

    IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

    CPC分类号： H01J37/3266 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32761 ,  H01J37/34

    摘要： The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.

    摘要翻译： 本发明涉及一种用于具有三维轮廓的圆柱形工件的电感耦合等离子体处理室和方法，更具体地涉及一种用于具有三维轮廓的圆柱形工件的电感耦合等离子体处理反应器和方法，其中 作为内部RF天线的工件通过一端的阻抗匹配网络和另一端的端接电容器连接到RF电源，以实现低等离子体污染，将密集的均匀等离子体限制在衬底附近并抑制二次电子 从衬底发射的等离子体工艺可以应用于具有平面或3-D结构的微型或纳米图案的3-D线性半导体器件，金属，玻璃，陶瓷或聚合物衬底等。

    Nano fabrication method for glass
    3.
    发明授权
    Nano fabrication method for glass 有权
    玻璃纳米制造方法

    公开(公告)号：US07854853B2

    公开(公告)日：2010-12-21

    申请号：US11595077

    申请日：2006-11-09

    申请人： Pan-Kyeom Kim ,  Geun-Bae Lim

    发明人： Pan-Kyeom Kim ,  Geun-Bae Lim

    IPC分类号： B44C1/22

    CPC分类号： C03C17/06 ,  C03C15/00 ,  C03C21/008 ,  C03C23/007

    摘要： An exemplary embodiment of the present invention provides a nano fabrication method for a glass, the method including forming a molecule substituting layer on a glass substrate, patterning the molecule substituting layer correspondent to shapes to be patterned on the glass substrate, substituting crystal atoms of the glass substrate with atoms of the molecule substituting layer, removing the patterned molecule substituting layer from the glass substrate, and etching the molecule substituted portion of the glass substrate.

    摘要翻译： 本发明的一个示例性实施例提供了一种用于玻璃的纳米制造方法，该方法包括在玻璃基板上形成分子取代层，将与图案化形状对应的分子取代层图案化在玻璃基板上， 玻璃基板，分子取代层的原子，从玻璃基板除去图案化分子取代层，并蚀刻玻璃基板的分子取代部分。

    Nano fabrication method for glass
    5.
    发明申请
    Nano fabrication method for glass 有权
    玻璃纳米制造方法

    公开(公告)号：US20080110863A1

    公开(公告)日：2008-05-15

    申请号：US11595077

    申请日：2006-11-09

    申请人： Pan-Kyeom Kim ,  Geun-Bae Lim

    发明人： Pan-Kyeom Kim ,  Geun-Bae Lim

    IPC分类号： B44C1/22

    CPC分类号： C03C17/06 ,  C03C15/00 ,  C03C21/008 ,  C03C23/007

    摘要： An exemplary embodiment of the present invention provides a nano fabrication method for a glass, the method including forming a molecule substituting layer on a glass substrate, patterning the molecule substituting layer correspondent to shapes to be patterned on the glass substrate, substituting crystal atoms of the glass substrate with atoms of the molecule substituting layer, removing the patterned molecule substituting layer from the glass substrate, and etching the molecule substituted portion of the glass substrate.

    摘要翻译： 本发明的一个示例性实施例提供了一种用于玻璃的纳米制造方法，该方法包括在玻璃基板上形成分子取代层，将与图案化形状对应的分子取代层图案化在玻璃基板上， 玻璃基板与分子取代层的原子，从玻璃基板去除图案化的分子取代层，并蚀刻玻璃基板的分子取代部分。

    Plasma immersion ion milling apparatus and method
    6.
    发明授权
    Plasma immersion ion milling apparatus and method 有权
    等离子浸渍离子研磨装置及方法

    公开(公告)号：US09190239B2

    公开(公告)日：2015-11-17

    申请号：US13265051

    申请日：2010-10-27

    申请人： Sung Il Chung ,  Hyeon Seok Oh ,  S. A. Nikiforov ,  Pan Kyeom Kim ,  Hyeon Taeg Kim ,  Jeong Woo Jeon ,  Jong Moon Kim

    发明人： Sung Il Chung ,  Hyeon Seok Oh ,  S. A. Nikiforov ,  Pan Kyeom Kim ,  Hyeon Taeg Kim ,  Jeong Woo Jeon ,  Jong Moon Kim

    IPC分类号： C23C14/34 ,  H01J37/08 ,  C23C14/48 ,  H01J37/305 ,  H01J37/32

    CPC分类号： H01J37/08 ,  C23C14/48 ,  H01J37/305 ,  H01J37/32009

    摘要： Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber.

    摘要翻译： 公开了一种用于使用加速离子对各种工件进行低温等离子体浸没处理的装置和方法，其中低温等离子体分布在放置在腔室中的圆柱形工件周围，工件由包括多槽的壳体封闭 提取电极以将工件与等离子体隔离，并且对工件和电极施加足以引起溅射的负电位，使得来自等离子体的离子在形成在提取电极和等离子体之间的护套内被加速，通过 电极并轰击工件，从而抛光工件的表面。 该装置和方法对于大的圆柱形基底，特别是用于微或纳米图案转印的基底的表面平滑是有效的。 该方法包括等离子体清洗，表面活化，表面平滑化，干蚀刻，沉积，等离子体浸入离子注入和在单室或多室内的沉积。

    PLASMA IMMERSION ION MILLING APPARATUS AND METHOD
    7.
    发明申请
    PLASMA IMMERSION ION MILLING APPARATUS AND METHOD 有权
    等离子沉淀离子磨机和方法

    公开(公告)号：US20120222952A1

    公开(公告)日：2012-09-06

    申请号：US13265051

    申请日：2010-10-27

    申请人： Sung Il Chung ,  Hyeon Seok Oh ,  S.A. Nikiforov ,  Pan Kyeom Kim ,  Hyeon Taeg Kim ,  Jeong Woo Jeon ,  Jong Moon Kim

    发明人： Sung Il Chung ,  Hyeon Seok Oh ,  S.A. Nikiforov ,  Pan Kyeom Kim ,  Hyeon Taeg Kim ,  Jeong Woo Jeon ,  Jong Moon Kim

    IPC分类号： C23C14/34

    CPC分类号： H01J37/08 ,  C23C14/48 ,  H01J37/305 ,  H01J37/32009

    摘要： Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber.

    摘要翻译： 公开了一种用于使用加速离子对各种工件进行低温等离子体浸没处理的装置和方法，其中低温等离子体分布在放置在腔室中的圆柱形工件周围，工件由包括多槽的壳体封闭 提取电极以将工件与等离子体隔离，并且对工件和电极施加足以引起溅射的负电位，使得来自等离子体的离子在形成在提取电极和等离子体之间的护套内被加速，通过 电极并轰击工件，从而抛光工件的表面。 该装置和方法对于大的圆柱形基底，特别是用于微或纳米图案转印的基底的表面平滑是有效的。 该方法包括等离子体清洗，表面活化，表面平滑化，干蚀刻，沉积，等离子体浸入离子注入和在单室或多室内的沉积。