公开(公告)号：US08017489B2

公开(公告)日：2011-09-13

申请号：US12047355

申请日：2008-03-13

Applicant: William F. Clark, Jr. ,  Ephrem G. Gebgreselasie ,  Xuefeng Liu ,  Robert Russell Robison

Inventor： William F. Clark, Jr. ,  Ephrem G. Gebgreselasie ,  Xuefeng Liu ,  Robert Russell Robison

IPC: H01L29/72

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device structure. The field effect device structure includes a gate electrode located over a channel region within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. The channel region includes a surface layer that comprises a carbon doped semiconductor material. The source and drain regions include a surface layer that comprises a semiconductor material that is not carbon doped. The particular selection of material for the channel region and source and drain regions provide for inhibited dopant diffusion and enhanced mechanical stress within the channel region, and thus enhanced performance of the field effect device.

Abstract translation: 半导体结构和制造半导体结构的方法提供场效应器件结构。 场效应器件结构包括位于半导体衬底内的沟道区域内的栅电极，该半导体衬底中的沟道区域分离半导体衬底内的多个源区和漏区。 沟道区域包括包含碳掺杂半导体材料的表面层。 源区和漏区包括包含不是碳掺杂的半导体材料的表面层。 用于沟道区和源极和漏极区的材料的特定选择提供抑制的掺杂剂扩散和沟道区内的增强的机械应力，从而提高场效应器件的性能。

公开(公告)号：US20090230475A1

公开(公告)日：2009-09-17

申请号：US12047355

申请日：2008-03-13

Applicant: William F. Clark, JR. ,  Ephrem G. Gebreselasie ,  Xuefeng Liu ,  Robert Russell Robison

Inventor： William F. Clark, JR. ,  Ephrem G. Gebreselasie ,  Xuefeng Liu ,  Robert Russell Robison

IPC: H01L29/00 ,  H01L21/8238

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device structure. The field effect device structure includes a gate electrode located over a channel region within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. The channel region includes a surface layer that comprises a carbon doped semiconductor material. The source and drain regions include a surface layer that comprises a semiconductor material that is not carbon doped. The particular selection of material for the channel region and source and drain regions provide for inhibited dopant diffusion and enhanced mechanical stress within the channel region, and thus enhanced performance of the field effect device.

Abstract translation: 半导体结构和制造半导体结构的方法提供场效应器件结构。 场效应器件结构包括位于半导体衬底内的沟道区域内的栅电极，该半导体衬底中的沟道区域分离半导体衬底内的多个源区和漏区。 沟道区域包括包含碳掺杂半导体材料的表面层。 源区和漏区包括包含不是碳掺杂的半导体材料的表面层。 用于沟道区和源极和漏极区的材料的特定选择提供抑制的掺杂剂扩散和沟道区内的增强的机械应力，从而提高场效应器件的性能。