-
公开(公告)号：US09155181B2
公开(公告)日：2015-10-06
申请号：US12852352
申请日：2010-08-06
申请人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
发明人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
IPC分类号： H01L21/306 , C23C16/00 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J37/32816 , H01J2237/334 , H05H2001/4652 , H05H2001/4682
摘要： A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described.
摘要翻译： 等离子体源包括环等离子体室，围绕环等离子体室的外部的初级绕组和多个铁氧体，其中环等离子体室穿过每个铁氧体。 还描述了用于产生等离子体的系统和方法。
-
公开(公告)号：US08999104B2
公开(公告)日：2015-04-07
申请号：US12852364
申请日：2010-08-06
申请人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
发明人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
CPC分类号： H01J37/32449 , H01J37/32422 , H01J37/3266 , H01J37/32669 , H01J37/32816 , H01J2237/334
摘要： A plasma source includes multiple ring plasma chambers, multiple primary windings, multiple ferrites and a control system. Each one of the primary windings is wrapped around an exterior one of the ring plasma chambers. Each one of the plurality of the ring plasma chamber passes through a respective portion of the plurality of ferrites. The control system is coupled to each of the ring plasma chambers. A system and method for generating and using a plasma are also described.
摘要翻译： 等离子体源包括多个环等离子体室，多个初级绕组，多个铁氧体和一个控制系统。 每个初级绕组缠绕在环形等离子体室的外部一个周围。 多个环形等离子体室中的每一个穿过多个铁氧体的相应部分。 控制系统耦合到每个环形等离子体室。 还描述了用于产生和使用等离子体的系统和方法。
-
3.发明申请公开(公告)号：US20120289053A1
公开(公告)日：2012-11-15
申请号：US13104923
申请日：2011-05-10
IPC分类号： H01L21/3065 , C23F1/08 , H01L21/302
CPC分类号： H01J37/32899 , H01J37/32633
摘要： A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.
摘要翻译： 半导体衬底处理系统包括限定为在暴露于处理区域中支撑衬底的衬底支撑件。 该系统还包括第一等离子体室，其被定义为产生第一等离子体并且将第一等离子体的反应性成分供应到处理区域。 该系统还包括被定义为产生第二等离子体并且将第二等离子体的反应性组分供应到处理区域的第二等离子体室。 第一和第二等离子体室被限定为独立控制。
-
公开(公告)号：US20060271325A1
公开(公告)日：2006-11-30
申请号：US11498544
申请日：2006-08-02
申请人： Neil Benjamin , Richard Gottscho , Nicolas Bright , Robert Steger
发明人： Neil Benjamin , Richard Gottscho , Nicolas Bright , Robert Steger
IPC分类号： G01R31/14
CPC分类号： G01R31/3187 , G05B19/4184 , G05B2219/31362 , G05B2219/31463 , Y02P90/14 , Y02P90/86
摘要： A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.
-
公开(公告)号：US09111729B2
公开(公告)日：2015-08-18
申请号：US12957923
申请日：2010-12-01
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： H01J37/32366 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/513 , H01J37/32082 , H01J37/32137 , H01J37/32376 , H01L21/6719 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed.
摘要翻译： 公开了一种等离子体蚀刻处理工具。 等离子体蚀刻处理工具，包括用于支撑具有衬底表面积的衬底的衬底支撑件，包括具有定向在衬底支撑件上的开放侧的等离子体微室的处理头，等离子体微室的开放侧具有处理区域 小于衬底表面积，限定在衬底支撑件和处理头之间的密封结构以及连接到等离子体微室和衬底支撑件的电源。 还公开了一种用于执行等离子体蚀刻的方法。
-
6.发明申请公开(公告)号：US20140096908A1
公开(公告)日：2014-04-10
申请号：US13649103
申请日：2012-10-10
申请人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
发明人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
IPC分类号： H01J37/32
CPC分类号： H01J37/32431 , H01J37/321 , H01J37/32669
摘要： A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.
摘要翻译： 处理室包括处理室顶部中的多个等离子体源。 每个等离子体源是包括初级绕组和多个铁氧体的环形等离子体源。 还描述了等离子体处理系统。 还描述了等离子体处理的方法。
-
公开(公告)号：US20060047458A1
公开(公告)日：2006-03-02
申请号：US10927161
申请日：2004-08-25
申请人： Neil Benjamin , Richard Gottscho , Nicolas Bright , Robert Steger
发明人： Neil Benjamin , Richard Gottscho , Nicolas Bright , Robert Steger
IPC分类号： G06F19/00
CPC分类号： G01R31/3187 , G05B19/4184 , G05B2219/31362 , G05B2219/31463 , Y02P90/14 , Y02P90/86
摘要： A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.
-
8.发明授权公开(公告)号：US08900403B2
公开(公告)日：2014-12-02
申请号：US13104925
申请日：2011-05-10
IPC分类号： H01L21/3065 , C23F1/08 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32633 , H01J37/32899 , H01L21/3065
摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
摘要翻译： 半导体基板处理系统包括具有处理区域和基板支撑体的室。 该系统包括设置在基板支撑件上方的室内的顶板组件。 顶板组件包括分别形成在顶板组件的下表面中的第一组和第二组等离子体微室。 气体供应通道的第一网络通过顶板组件形成，以将第一工艺气体流动到第一组等离子体微室，以转化为第一等离子体。 通过顶板组件形成一组排气通道。 第二组等离子体微室形成在排气通道组内。 气体供应通道的第二网络通过顶板组件形成，以将第二工艺气体流动到第二组等离子体微室，以转化为第二等离子体。
-
公开(公告)号：US20120035766A1
公开(公告)日：2012-02-09
申请号：US12852375
申请日：2010-08-06
申请人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
发明人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
IPC分类号： H01L21/3065 , H05B31/26 , G05B13/02 , H01J61/28
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3244 , H01J37/32467 , H01J37/32642 , H01J37/3266 , H01J2237/334
摘要： A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber, multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites and multiple plasma chamber outlets coupling the plasma chamber to a process chamber. Each one of the plasma chamber outlets having a respective plasma restriction. A system and method for generating a plasma are also described.
摘要翻译： 等离子体源包括环等离子体室，围绕环等离子体室的外部的初级绕组，多个铁氧体，其中环等离子体室穿过将等离子体室耦合到处理室的每个铁氧体和多个等离子体室出口。 每个等离子体室出口具有相应的等离子体限制。 还描述了用于产生等离子体的系统和方法。
-
公开(公告)号：US09449793B2
公开(公告)日：2016-09-20
申请号：US12852375
申请日：2010-08-06
申请人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
发明人： Ali Shajii , Richard Gottscho , Souheil Benzerrouk , Andrew Cowe , Siddharth P. Nagarkatti , William R. Entley
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3244 , H01J37/32467 , H01J37/32642 , H01J37/3266 , H01J2237/334
摘要： A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber, multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites and multiple plasma chamber outlets coupling the plasma chamber to a process chamber. Each one of the plasma chamber outlets having a respective plasma restriction. A system and method for generating a plasma are also described.
摘要翻译： 等离子体源包括环等离子体室，围绕环等离子体室的外部的初级绕组，多个铁氧体，其中环等离子体室穿过将等离子体室耦合到处理室的每个铁氧体和多个等离子体室出口。 每个等离子体室出口具有相应的等离子体限制。 还描述了用于产生等离子体的系统和方法。
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.05 秒)
