Invention Grant
US08900403B2 Semiconductor processing system having multiple decoupled plasma sources
有权
具有多个解耦等离子体源的半导体处理系统
- Patent Title: Semiconductor processing system having multiple decoupled plasma sources
- Patent Title (中): 具有多个解耦等离子体源的半导体处理系统
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Application No.: US13104925Application Date: 2011-05-10
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Publication No.: US08900403B2Publication Date: 2014-12-02
- Inventor: John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
- Applicant: John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; C23F1/08 ; H01J37/32
Abstract:
A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
Public/Granted literature
- US20120289054A1 Semiconductor Processing System Having Multiple Decoupled Plasma Sources Public/Granted day:2012-11-15
Information query
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