公开(公告)号：US07319612B2

公开(公告)日：2008-01-15

申请号：US11132353

申请日：2005-05-18

Applicant: Edward Babb ,  Prashanti Govindu ,  Ahmed T. Sayed

Inventor： Edward Babb ,  Prashanti Govindu ,  Ahmed T. Sayed

IPC: G11C16/26

CPC classification number: G11C16/32 ,  G11C7/22

Abstract: In one embodiment, the present invention includes a method for performing a plurality of read operations on a nonvolatile array of a memory according to a single read command, and storing data from the plurality of read operations in a volatile array of the memory. In some embodiments, the nonvolatile array may be a flash-based array and the volatile array may be a random access memory.

Abstract translation: 在一个实施例中，本发明包括一种用于根据单个读取命令对存储器的非易失性阵列执行多个读取操作并将来自多个读取操作的数据存储在存储器的易失性阵列中的方法。 在一些实施例中，非易失性阵列可以是基于闪存的阵列，并且易失性阵列可以是随机存取存储器。

公开(公告)号：US07447079B2

公开(公告)日：2008-11-04

申请号：US11771982

申请日：2007-06-29

Applicant: Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

Inventor： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

IPC: G11C16/04 ,  G11C16/06

CPC classification number: G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

Abstract: Current sensing is performed in a non-volatile storage device for a selected non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.

Abstract translation: 在具有负阈值电压的所选择的非易失性存储元件的非易失性存储装置中执行电流感测。 控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。 即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。 通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。

公开(公告)号：US07368979B2

公开(公告)日：2008-05-06

申请号：US11523875

申请日：2006-09-19

Applicant: Prashanti Govindu ,  Feng Pan ,  Man Mui ,  Gyuwan Kwon ,  Trung Pham ,  Chi-Ming Wang

Inventor： Prashanti Govindu ,  Feng Pan ,  Man Mui ,  Gyuwan Kwon ,  Trung Pham ,  Chi-Ming Wang

IPC: G05F1/10

CPC classification number: G11C16/30 ,  G11C5/145

Abstract: According to different embodiments of the present invention, various methods, devices and systems are described for managing power in charge pumps in a non-volatile memory system having a high voltage charge pump and associated regulator. A method includes the following operations, receiving an operation command corresponding to an operation, pumping up a charge pump output voltage to a desired output voltage, turning off the regulator and the charge pump when the output voltage is approximately the desired output voltage compensating for charge sharing by turning on the charge pump and setting a pump clock rate to a slow clock rate in order to avoid overshooting the desired output voltage by the charge pump while the operation is being carried out, and compensating for junction leakage by turning on the regulator and the charge pump until the charge pump output voltage is the desired output voltage.

Abstract translation: 根据本发明的不同实施例，描述了用于在具有高电压电荷泵和相关联的调节器的非易失性存储器系统中管理电荷泵中的功率的各种方法，装置和系统。 一种方法包括以下操作：当输出电压近似为补偿电荷的期望输出电压时，接收与一个操作对应的操作命令，将电荷泵输出电压泵送到期望的输出电压，关闭调节器和电荷泵 通过打开电荷泵并将泵时钟速率设置为慢时钟速率来共享，以便在执行操作时避免由电荷泵过冲所需的输出电压，以及通过打开调节器来补偿结漏电 电荷泵直到电荷泵输出电压为期望的输出电压。

公开(公告)号：US20080247229A1

公开(公告)日：2008-10-09

申请号：US11771997

申请日：2007-06-29

Applicant: Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

Inventor： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

IPC: G11C11/34

CPC classification number: G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

Abstract: A non-volatile storage device in which current sensing is performed for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

Abstract translation: 一种非易失性存储装置，其中对非易失性存储元件执行电流检测。 对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。 通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。 感觉可以快速发生，因为等待地面反弹稳定没有延迟。

公开(公告)号：US20070229149A1

公开(公告)日：2007-10-04

申请号：US11278108

申请日：2006-03-30

Applicant: Feng Pan ,  Prashanti Govindu

Inventor： Feng Pan ,  Prashanti Govindu

IPC: G05F1/10

CPC classification number: H02M3/073 ,  H02M2001/0025 ,  H02M2001/0032 ,  H02M2001/0048 ,  Y02B70/1491 ,  Y02B70/16

Abstract: A high voltage device is connected in a voltage divider and couples a regulated voltage to a comparator for voltage regulation. The high voltage device is biased to conduct a current during regulator operation. When regulator operation is terminated, a switch in the voltage divider is opened to terminate current flow in the voltage divider. While the regulated output voltage can be coupled to the high voltage device when the switch is opened, the device node coupled to the comparator remains at a voltage level determined by the device bias voltage and the turn on voltage, VT, of the device, or V bias −VT, when the switch is opened. In one embodiment, the high voltage device comprises a field effect transistor having sufficient width to accommodate the voltage drop across the source and drain.

Abstract translation: 高压器件连接在分压器中，并将稳压电压耦合到比较器进行电压调节。 在调节器运行期间，高电压装置被偏置以导通电流。 当调节器操作终止时，分压器中的开关打开以终止分压器中的电流。 当开关断开时，稳压输出电压可耦合到高电压器件，耦合到比较器的器件节点保持在由器件偏置电压和导通电压V T确定的电压电平， SUB>，或者V bias -V T ，当开关打开时。 在一个实施例中，高电压装置包括具有足够宽度的场效应晶体管，以适应源极和漏极两端的电压降。

公开(公告)号：US07539060B2

公开(公告)日：2009-05-26

申请号：US11771997

申请日：2007-06-29

Applicant: Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

Inventor： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

IPC: G11C16/04 ,  G11C16/06

CPC classification number: G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

Abstract: A non-volatile storage device in which current sensing is performed for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

Abstract translation: 一种非易失性存储装置，其中对非易失性存储元件执行电流检测。 对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。 通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。 感觉可以快速发生，因为等待地面反弹稳定没有延迟。

公开(公告)号：US20080247239A1

公开(公告)日：2008-10-09

申请号：US11771992

申请日：2007-06-29

Applicant: Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

Inventor： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

IPC: G11C11/34

CPC classification number: G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

Abstract: Current sensing is performed in a non-volatile storage device for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

Abstract translation: 在用于非易失性存储元件的非易失性存储设备中执行电流检测。 对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。 通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。 感觉可以快速发生，因为等待地面反弹稳定没有延迟。

公开(公告)号：US20080247228A1

公开(公告)日：2008-10-09

申请号：US11771987

申请日：2007-06-29

Applicant: Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

Inventor： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

IPC: G11C11/34

CPC classification number: G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

Abstract: A non-volatile storage device in which current sensing is performed for a non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.

Abstract translation: 一种非易失性存储装置，其中对具有负阈值电压的非易失性存储元件执行电流检测。 控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。 即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。 通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。

公开(公告)号：US20060262608A1

公开(公告)日：2006-11-23

申请号：US11132353

申请日：2005-05-18

Applicant: Edward Babb ,  Prashanti Govindu ,  Ahmed Sayed

Inventor： Edward Babb ,  Prashanti Govindu ,  Ahmed Sayed

IPC: G11C7/10

CPC classification number: G11C16/32 ,  G11C7/22

Abstract: In one embodiment, the present invention includes a method for performing a plurality of read operations on a nonvolatile array of a memory according to a single read command, and storing data from the plurality of read operations in a volatile array of the memory. In some embodiments, the nonvolatile array may be a flash-based array and the volatile array may be a random access memory. Other embodiments are described and claimed.

Abstract translation: 在一个实施例中，本发明包括一种用于根据单个读取命令对存储器的非易失性阵列执行多个读取操作并将来自多个读取操作的数据存储在存储器的易失性阵列中的方法。 在一些实施例中，非易失性阵列可以是基于闪存的阵列，并且易失性阵列可以是随机存取存储器。 描述和要求保护其他实施例。

公开(公告)号：US07532516B2

公开(公告)日：2009-05-12

申请号：US11771987

申请日：2007-06-29

Applicant: Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

Inventor： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

IPC: G11C16/04 ,  G11C16/06

CPC classification number: G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

Abstract: A non-volatile storage device in which current sensing is performed for a non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.

Abstract translation: 一种非易失性存储装置，其中对具有负阈值电压的非易失性存储元件执行电流检测。 控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。 即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。 通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。