公开(公告)号：US06578703B2

公开(公告)日：2003-06-17

申请号：US09870357

申请日：2001-05-30

Applicant: Henry L. Humphrey ,  Peter J. Sakakini ,  Scott A. Delmont ,  Michael W. Pryor

Inventor： Henry L. Humphrey ,  Peter J. Sakakini ,  Scott A. Delmont ,  Michael W. Pryor

IPC: B65G4300

CPC classification number: H01L21/67709 ,  H01L21/67721

Abstract: A leadframe loader having a magnetic latch of predefined strength connecting a drive arm mechanism and a pusher system is the preferred embodiment of a transport loader. The amount of force applied to a pusher blade is set to a level below that where a leadframe, or other device to be pushed would be damaged by selecting the size and strength of a magnetic latch attached to the drive arm. The magnet is designed to break away from the steel coupling structure on the pusher when the force exceeds a preset value, and stops the movement before damage to the leadframe occurs. Calculated values were verified by physical testing, and a safety margin assigned to insure release of the magnet prior to bending leadframes. The system is assimilated into different pieces of semiconductor assembly equipment.

公开(公告)号：US07741701B2

公开(公告)日：2010-06-22

申请号：US11374634

申请日：2006-03-13

Applicant: Richard L. Mahle ,  Peter J. Sakakini

Inventor： Richard L. Mahle ,  Peter J. Sakakini

IPC: H01L23/34 ,  H01L21/301

CPC classification number: H01L21/02016 ,  B23K26/3576 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/268 ,  H01L21/302 ,  H01L21/78 ,  H01L2924/0002 ,  Y10S438/928 ,  H01L2924/00

Abstract: A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.

Abstract translation: 公开了一种用于减少应力集中的激光来处理半导体晶片表面的区域的方法。 晶片处理方法公开了用激光束处理晶片表面的区域，其中处理区域被光束消融或熔化并再固化成更平面的轮廓，从而减少了应力集中区域和应力梯度，这些区域有助于 在晶片切割过程中产生裂纹和碎裂。 优选地，处理区域的宽度小于划线路的宽度，但宽于由晶片切割刀片产生的切口。 因此，当晶片被切割时，切割刀片优选仅通过处理区域进行锯切。 应当理解，根据需要，优选实施例的方法可以用于处理晶片上的应力集中和表面不连续性的其他区域。

公开(公告)号：US07041578B2

公开(公告)日：2006-05-09

申请号：US10612431

申请日：2003-07-02

Applicant: Richard L. Mahle ,  Peter J. Sakakini

Inventor： Richard L. Mahle ,  Peter J. Sakakini

IPC: H01L21/46 ,  H01L21/78 ,  H01L21/301 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02016 ,  B23K26/3576 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/268 ,  H01L21/302 ,  H01L21/78 ,  H01L2924/0002 ,  Y10S438/928 ,  H01L2924/00

Abstract: A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.

Abstract translation: 公开了一种用于减少应力集中的激光来处理半导体晶片表面的区域的方法。 晶片处理方法公开了用激光束处理晶片表面的区域，其中处理区域被光束消融或熔化并再固化成更平面的轮廓，从而减少了应力集中区域和应力梯度，这些区域有助于 在晶片切割过程中产生裂纹和碎裂。 优选地，处理区域的宽度小于划线路的宽度，但宽于由晶片切割刀片产生的切口。 因此，当晶片被切割时，切割刀片优选仅通过处理区域进行锯切。 应当理解，根据需要，优选实施例的方法可以用于处理晶片上的应力集中和表面不连续性的其他区域。

公开(公告)号：US06602726B1

公开(公告)日：2003-08-05

申请号：US10060517

申请日：2002-01-30

Applicant: Sean Michael Malolepszy ,  Peter J. Sakakini

Inventor： Sean Michael Malolepszy ,  Peter J. Sakakini

IPC: H01L2166

CPC classification number: H01L24/85 ,  H01L21/4853 ,  H01L21/4864 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/78703 ,  H01L2224/85009 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  Y10T29/4913 ,  Y10T29/49151 ,  Y10T29/49167 ,  Y10T29/49179 ,  Y10T29/49181 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T29/53265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Thick film bond surfaces (8) on a support structure (10), such as a ceramic substrate or an IC package substrate, tend to deform during processing. A personality kit (16) having raised bosses (24) engages with and compresses the bond surfaces, resulting in a flatter, wider bond surface having improved reflectivity. The personality kit (16) is fit within a clamp (30) that can be used as a stand-alone unit or integrated into an existing machine, such as a wire bonder (46).

Abstract translation: 诸如陶瓷衬底或IC封装衬底之类的支撑结构（10）上的厚膜结合面（8）在加工过程中会发生变形。 具有凸起凸起（24）的个性套件（16）与接合表面接合并压缩，导致具有改善的反射率的更平坦，更宽的粘结表面。 个性套件（16）装配在可用作独立单元或集成到现有机器（例如引线接合器（46））中的夹具（30）内。