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公开(公告)号：US11329082B2
公开(公告)日：2022-05-10
申请号：US16983422
申请日：2020-08-03
发明人： Jinhua Rao , Haibo Xiao
IPC分类号： H01L27/146
摘要： An image sensor and an electronic device are disclosed. At least one pixel in the image sensor includes a photodiode, a floating diffusion region and a transfer transistor located between the photodiode and the floating diffusion region. The photodiode includes a carrier-accumulation region, and a gate of the transfer transistor extends up to the carrier-accumulation region. The gate extends away from the floating diffusion region and overlaps over half of a width of the carrier-accumulation region. Since carriers move at a higher speed in a fast transfer channel in the semiconductor substrate around such a gate, increasing the length of the transfer transistor's gate extending away from the floating diffusion region and overlapping range with the carrier-accumulation region can facilitate fast movement of carriers from the carrier-accumulation region through such fast transfer channels to the floating diffusion region, thereby improving overall carrier transfer efficiency and optimizing performance thereof.
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公开(公告)号：US09553123B2
公开(公告)日：2017-01-24
申请号：US15134184
申请日：2016-04-20
发明人： Feng Lin , Quanbao Li , Guo Ye
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14605 , H01L27/14607 , H01L27/1461 , H01L27/14643 , H01L27/14687 , H01L27/14689
摘要： A back-illuminated sensor chip is disclosed, which includes one or more pixel areas each including a plurality of pixels located in a plane and arranged in a matrix. Each pixel area includes: a central portion consisting of a plurality of first pixels located in vicinity of a center of the pixel area; and a peripheral portion surrounding the central portion and consisting of the other pixels in the pixel area than the first pixels. The plurality of first pixels have a first height in a vertical direction perpendicular to the plane, and the pixels in the peripheral portion have a second height in the vertical direction that is greater than the first height so that the peripheral portion protrudes outward beyond the central portion and is thus located nearer to a light source during imaging than the central portion. As a result, light sensibility of the peripheral portion is increased.
摘要翻译： 公开了一种背照式传感器芯片，其包括一个或多个像素区域，每个像素区域包括位于平面中并以矩阵布置的多个像素。 每个像素区域包括：由位于像素区域的中心附近的多个第一像素组成的中心部分; 以及围绕中心部分并由像素区域中的其他像素组成的周边部分而不是第一像素。 多个第一像素在垂直于该平面的垂直方向上具有第一高度，并且周边部分中的像素在垂直方向上具有大于第一高度的第二高度，使得周边部分向外突出超出中央 因此在成像期间比中心部位更靠近光源。 结果，周边部分的光敏性增加。
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公开(公告)号：US20160315110A1
公开(公告)日：2016-10-27
申请号：US15134184
申请日：2016-04-20
发明人： Feng Lin , Quanbao Li , Guo Ye
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14605 , H01L27/14607 , H01L27/1461 , H01L27/14643 , H01L27/14687 , H01L27/14689
摘要： A back-illuminated sensor chip is disclosed, which includes one or more pixel areas each including a plurality of pixels located in a plane and arranged in a matrix. Each pixel area includes: a central portion consisting of a plurality of first pixels located in vicinity of a center of the pixel area; and a peripheral portion surrounding the central portion and consisting of the other pixels in the pixel area than the first pixels. The plurality of first pixels have a first height in a vertical direction perpendicular to the plane, and the pixels in the peripheral portion have a second height in the vertical direction that is greater than the first height so that the peripheral portion protrudes outward beyond the central portion and is thus located nearer to a light source during imaging than the central portion. As a result, light sensibility of the peripheral portion is increased.
摘要翻译： 公开了一种背照式传感器芯片，其包括一个或多个像素区域，每个像素区域包括位于平面中并以矩阵布置的多个像素。 每个像素区域包括：由位于像素区域的中心附近的多个第一像素组成的中心部分; 以及围绕中心部分并由像素区域中的其他像素组成的周边部分而不是第一像素。 多个第一像素在垂直于该平面的垂直方向上具有第一高度，并且周边部分中的像素在垂直方向上具有大于第一高度的第二高度，使得周边部分向外突出超出中央 因此在成像期间比中心部位更靠近光源。 结果，周边部分的光敏性增加。
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公开(公告)号：US20140087491A1
公开(公告)日：2014-03-27
申请号：US13865814
申请日：2013-04-18
发明人： Regis Fan
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , G02B3/0043 , G02B13/0085 , H01L22/20 , H01L27/14618 , H01L27/14632 , H01L27/14687 , H01L2924/0002 , H01L2924/00
摘要： A wafer-level bonding method for fabricating wafer level camera lenses is disclosed. The method includes: providing a lens wafer including lenses arranged in an array and a sensor wafer including sensors arranged in an array; measuring and analyzing an FFL of each lens to obtain a corresponding FFL compensation value for each lens; forming a thin transparent film (TTF) on each sensor of the sensor wafer, and the thickness of TTF is determined by the FFL compensation value of the corresponding lens; aligning and bonding the lens wafer with the sensor wafer having TTFs formed thereon. Since the focal length of each lens is adjusted to compensate the FFL of the lens by adding a TTF of transparent optical material with an index of refraction that is similar to the index of refraction of the sensor cover glass, the FFL variation of each camera lens can be reduced.
摘要翻译： 公开了一种用于制造晶片级相机镜头的晶片级接合方法。 该方法包括：提供包括排列成阵列的透镜的透镜晶片和包括以阵列布置的传感器的传感器晶片; 测量和分析每个透镜的FFL以获得每个透镜的相应的FFL补偿值; 在传感器晶片的每个传感器上形成薄透明膜（TTF），并且TTF的厚度由相应透镜的FFL补偿值确定; 将透镜晶片与其上形成有TTF的传感器晶片对准和结合。 由于调整每个透镜的焦距以通过添加具有与传感器盖玻璃的折射率相似的折射率的透明光学材料的TTF来补偿透镜的FFL，因此每个相机透镜的FFL变化 可以减少
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公开(公告)号：US20140048898A1
公开(公告)日：2014-02-20
申请号：US13945860
申请日：2013-07-18
发明人： Xiaoai Fei , Jing Ye
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L27/14623 , H01L27/1464
摘要： A backside illuminated (BSI) CMOS image sensor is disclosed. The BSI CMOS image sensor includes: a substrate having a front side and a back side, the substrate including a photodiode formed therein, the photodiode being proximate the back side of the substrate; a metal shielding layer covering the back side of the substrate, the metal shielding layer including an opening formed therein, the opening being arranged in correspondence with the photodiode; and a light-absorbing layer formed on each side face of the opening. The light-absorbing layer coated on the side faces of the opening prevents the occurrence of photon cross-talk and hence improves imaging quality of the BSI CMOS image sensor.
摘要翻译： 公开了背面照明（BSI）CMOS图像传感器。 BSI CMOS图像传感器包括：具有正面和背面的衬底，衬底包括形成在其中的光电二极管，光电二极管靠近衬底的背面; 覆盖所述基板的背面的金属屏蔽层，所述金属屏蔽层包括形成在其中的开口，所述开口对应于所述光电二极管布置; 以及形成在开口的每个侧面上的光吸收层。 涂布在开口侧面上的光吸收层防止发生光子串扰，从而提高BSI CMOS图像传感器的成像质量。
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公开(公告)号：US20210167104A1
公开(公告)日：2021-06-03
申请号：US16983422
申请日：2020-08-03
发明人： Jinhua RAO , Haibo XIAO
IPC分类号： H01L27/146
摘要： An image sensor and an electronic device are disclosed. At least one pixel in the image sensor includes a photodiode, a floating diffusion region and a transfer transistor located between the photodiode and the floating diffusion region. The photodiode includes a carrier-accumulation region, and a gate of the transfer transistor extends up to the carrier-accumulation region. The gate extends away from the floating diffusion region and overlaps over half of a width of the carrier-accumulation region. Since carriers move at a higher speed in a fast transfer channel in the semiconductor substrate around such a gate, increasing the length of the transfer transistor's gate extending away from the floating diffusion region and overlapping range with the carrier-accumulation region can facilitate fast movement of carriers from the carrier-accumulation region through such fast transfer channels to the floating diffusion region, thereby improving overall carrier transfer efficiency and optimizing performance thereof.
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公开(公告)号：US09202841B1
公开(公告)日：2015-12-01
申请号：US14490645
申请日：2014-09-18
发明人： Jiaming Xing , Jing Ye , Xifeng Gao , Zhetian Shi
IPC分类号： H01L27/146 , H01L21/768 , H01L21/28 , H01L23/48 , H01L23/00
CPC分类号： H01L27/14685 , H01L21/28132 , H01L21/743 , H01L21/76877 , H01L23/481 , H01L23/485 , H01L24/83 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14687
摘要： A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.
摘要翻译： 公开了一种制造半导体结构的方法，其中连接部分上方的焊盘和功能部分上方的金属结构由相同的金属层形成。 该设计使得能够通过形成单个金属层并在其上执行选择性蚀刻工艺来同时形成焊盘和金属结构，从而导致工艺简化，生产率提高和成本降低的优点。
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公开(公告)号：US09030604B2
公开(公告)日：2015-05-12
申请号：US14024513
申请日：2013-09-11
CPC分类号： H04N5/2253 , H04N5/2252 , H04N5/2257 , H05K1/111 , H05K3/301 , H05K3/3436 , H05K2201/10121 , H05K2201/10151 , H05K2201/10969 , Y02P70/611 , Y02P70/613
摘要： A housing for protecting a wafer-level camera module and fixing the wafer-level camera module to a printed circuit board (PCB) includes: four side plates, defining a quadrilateral frame; four supporting plates each fixed to a lower portion of an inner face of a corresponding one of the four side plates, each supporting plate having a top face supporting a portion of the camera module; and four bottom plates each fixed to a lower portion of an outer face of a corresponding one of the four side plates, each bottom plate having a bottom face fixed to the PCB. The housing is capable of addressing the issues of poor housing-PCB soldering, paint falling off and surface scratching and improving the efficiency in UV lamp-utilized UV adhesive curing.
摘要翻译： 用于保护晶片级相机模块并将晶片级相机模块固定到印刷电路板（PCB）的外壳包括：限定四边形框架的四个侧板; 四个支撑板各自固定到四个侧板中的相应一个的内表面的下部，每个支撑板具有支撑相机模块的一部分的顶面; 以及四个底板，每个底板固定到四个侧板中的相应一个的外表面的下部，每个底板具有固定到PCB的底面。 房屋能够解决住房不良PCB焊接，油漆脱落和表面划伤问题，提高紫外线灯使用的紫外线固化的效率。
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公开(公告)号：US20240006455A1
公开(公告)日：2024-01-04
申请号：US17822654
申请日：2022-08-26
发明人： Liqun DONG , Haibo XIAO , Shuaibing LIN , Xinzhi DAI
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689
摘要： The present invention provides an image sensor and a method for fabricating the image sensor. The image sensor includes a semiconductor substrate, photodiodes (PD), deep isolation trenches, first deep P-well blocks and second deep P-wells. The isolation trenches surrounds the PDs, and each of the isolation trenches is separated from any adjacent isolation trenches at a crossing where they would have crossed each other if they further extended. The first deep P-wells blocks have projections on the semiconductor substrate, which encompass projections of said separated portions of the isolation trenches on the semiconductor substrate. The first P-well blocks can be formed using only one photomask, resulting in a reduction in cost.
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公开(公告)号：US11418734B1
公开(公告)日：2022-08-16
申请号：US17408926
申请日：2021-08-23
发明人： Yunyi Wang , Zejian Wang , Yusheng Yang
摘要： The present invention provides a dual conversion gain image sensor comprising: a pixel circuit, through which pixel power supply voltage noise is transferred to a bit line; a power supply noise cancellation circuit with an input to which the pixel power supply voltage is applied, the power supply noise cancellation circuit mimicly producing a first transfer function with the aid of a low conversion gain path, the power supply noise cancellation circuit mimicly producing a second transfer function with the aid of a high conversion gain path; and a comparator. According to the present invention, the low and high conversion gain paths are two independent power supply noise cancellation paths that result in different transfer functions capable of tracking the variation of the pixel power supply voltage in low and high conversion gain modes.
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