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公开(公告)号：US09202841B1
公开(公告)日：2015-12-01
申请号：US14490645
申请日：2014-09-18
发明人： Jiaming Xing , Jing Ye , Xifeng Gao , Zhetian Shi
IPC分类号： H01L27/146 , H01L21/768 , H01L21/28 , H01L23/48 , H01L23/00
CPC分类号： H01L27/14685 , H01L21/28132 , H01L21/743 , H01L21/76877 , H01L23/481 , H01L23/485 , H01L24/83 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14687
摘要： A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.
摘要翻译： 公开了一种制造半导体结构的方法，其中连接部分上方的焊盘和功能部分上方的金属结构由相同的金属层形成。 该设计使得能够通过形成单个金属层并在其上执行选择性蚀刻工艺来同时形成焊盘和金属结构，从而导致工艺简化，生产率提高和成本降低的优点。
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公开(公告)号：US20150349017A1
公开(公告)日：2015-12-03
申请号：US14490645
申请日：2014-09-18
发明人： Jiaming Xing , Jing Ye , Xifeng Gao , Zhetian Shi
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L21/28132 , H01L21/743 , H01L21/76877 , H01L23/481 , H01L23/485 , H01L24/83 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14687
摘要： A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.
摘要翻译： 公开了一种制造半导体结构的方法，其中连接部分上方的焊盘和功能部分上方的金属结构由相同的金属层形成。 该设计使得能够通过形成单个金属层并在其上执行选择性蚀刻工艺来同时形成焊盘和金属结构，从而导致工艺简化，生产率提高和成本降低的优点。
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