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    Resist composition and patterning process using the same
    1.
    发明授权
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号：US07745094B2

    公开(公告)日：2010-06-29

    申请号：US11702658

    申请日：2007-02-06

    申请人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda

    发明人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/075

    CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/114

    摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

    摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过含有氟化降冰片烷基的三种硅烷单体和具有酸不稳定基团保护的羧基的有机基团和含有内酯环的有机基团的混合物的共水解缩合而获得。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

    Resist composition and patterning process
    2.
    发明授权
    Resist composition and patterning process 失效
    抗蚀剂组成和图案化工艺

    公开(公告)号：US07550247B2

    公开(公告)日：2009-06-23

    申请号：US11205980

    申请日：2005-08-18

    申请人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda ,  Toshihiko Fujii

    发明人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda ,  Toshihiko Fujii

    IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/36

    CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/108

    摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

    摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过在近邻碳原子上含有具有羟基并且具有至少3个氟原子的有机基团的三种硅烷单体的混合物的共水解缩合获得，所述有机基团具有羧基被保护的有机基团 酸不稳定基团和含内酯环的有机基团。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

    Silsesquioxane compound mixture, method of making, resist composition, and patterning process
    3.
    发明授权
    Silsesquioxane compound mixture, method of making, resist composition, and patterning process 有权
    倍半硅氧烷复合混合物，制备方法，抗蚀剂组合物和图案化工艺

    公开(公告)号：US07265234B2

    公开(公告)日：2007-09-04

    申请号：US11393911

    申请日：2006-03-31

    申请人： Yoshitaka Hamada ,  Mutsuo Nakashima

    发明人： Yoshitaka Hamada ,  Mutsuo Nakashima

    IPC分类号： C07F7/00 ,  G03C1/76

    CPC分类号： G03F7/0757 ,  C08G77/045 ,  G03F7/0045 ,  H01L21/3122

    摘要： A silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on side chain and having a degree of condensation of substantially 100% is prepared by a first stage wherein a silane feed comprising a trifunctional silane bearing a bulky substituent group on side chain represented by formula (1): wherein Y is an aliphatic or aromatic organic group optionally having a functional group, X1, X2 and X3 are H, halogen, alkoxy or aryloxy is hydrolyzed in the presence of an acid or base catalyst, and a second stage wherein dehydrating condensation is carried out in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system.

    摘要翻译： 通过第一阶段制备具有高比例的在侧链上具有大体积取代基且具有基本上100％的缩合度的倍半硅氧烷化合物的倍半硅氧烷化合物混合物，其中包含在侧链上具有大体积取代基的三官能硅烷的硅烷进料 由式（1）表示：其中Y是任选具有官能团的脂族或芳族有机基团，X 1，X 2和X 3 O 在酸或碱催化剂的存在下，H，卤素，烷氧基或芳氧基被水解，第二步是在强碱催化剂的存在下进行脱水缩合，同时除去由反应物凝结出来的水 系统。

    Polymers, resist materials, and pattern formation method
    4.
    发明授权
    Polymers, resist materials, and pattern formation method 有权
    聚合物，抗蚀剂材料和图案形成方法

    公开(公告)号：US06677101B2

    公开(公告)日：2004-01-13

    申请号：US10050478

    申请日：2002-01-16

    申请人： Tsunehiro Nishi ,  Koji Hasegawa ,  Mutsuo Nakashima

    发明人： Tsunehiro Nishi ,  Koji Hasegawa ,  Mutsuo Nakashima

    IPC分类号： G03F7039

    CPC分类号： C08G61/06 ,  G03F7/0395 ,  G03F7/0397

    摘要： An object of the present invention is to provide a polymer which has excellent reactivity, rigidity and adhesion to the substrate, and undergoes a low degree of swelling during development, a resist material which uses this polymer as the base resin and hence exhibits much higher resolving power and etching resistance than conventional resist materials, and a pattern formation method using this resist material. Specifically, the present invention provides a novel polymer containing repeating units represented by the following general formula (1-1) or (1-2) and having a weight-average molecular weight of 1,000 to 500,000, a resist material using the polymer as a base resin, and a pattern formation method using the resist material.

    摘要翻译： 本发明的目的是提供一种聚合物，其具有优异的反应性，刚性和对基材的粘合性，并且在显影期间发生低度膨胀，使用该聚合物作为基础树脂的抗蚀剂材料，因此表现出更高的分辨率 功率和耐蚀刻性，以及使用该抗蚀剂材料的图案形成方法。 具体地说，本发明提供一种含有下述通式（1-1）或（1-2）表示的重均单元，重均分子量为1000〜500,000的新型聚合物，使用该聚合物作为 基树脂和使用抗蚀剂材料的图案形成方法。

    Ether, polymer, resist composition and patterning process
    5.
    发明授权
    Ether, polymer, resist composition and patterning process 有权
    醚，聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US06624335B2

    公开(公告)日：2003-09-23

    申请号：US10046264

    申请日：2002-01-16

    申请人： Seiichiro Tachibana ,  Mutsuo Nakashima ,  Tsunehiro Nishi

    发明人： Seiichiro Tachibana ,  Mutsuo Nakashima ,  Tsunehiro Nishi

    IPC分类号： C07C4100

    CPC分类号： C07C69/14 ,  C07C43/1781 ,  C07C69/007 ,  C07C2602/42 ,  C07C2603/86 ,  C08F232/08

    摘要： An ether compound of formula (1) is provided wherein R1 is H or C1-6 alkyl, R2 is C1-6 alkyl, R3 is H, C1-15 acyl or C1-15 alkoxycarbonyl which may be substituted with halogen atoms, k is 0 or 1, m is from 0 to 3, and n is from 3 to 6. The ether compound is polymerized to form a polymer having improved reactivity, robustness and substrate adhesion. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV

    摘要翻译： 提供式（1）的醚化合物，其中R 1是H或C 1-6烷基，R 2是C 1-6烷基，R 3是H，C 1-15酰基或C 1-15烷氧基羰基，其中 可以被卤素原子取代，k为0或1，m为0至3，n为3至6.醚化合物聚合形成具有改善的反应性，稳定性和底物粘合性的聚合物。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案