公开(公告)号：US07183583B2

公开(公告)日：2007-02-27

申请号：US11020737

申请日：2004-12-22

Applicant: Mu-Jen Lai ,  Schang-Jing Hon

Inventor： Mu-Jen Lai ,  Schang-Jing Hon

IPC: H01L29/22

CPC classification number: H01L33/42 ,  H01L33/32

Abstract: A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

Abstract translation: 提供了一种用于制造GaN基LED的方法。 该方法首先在p型欧姆接触层的纹理表面的顶部形成第一接触扩展金属层。 该方法然后在第一接触扩散层的顶部上形成第二和第三接触扩散金属层。 由三层接触扩散金属层构成的p型透明金属导电层，在高温下在含氧或含氮环境中进行合金化处理后，具有优异的导电性。 p型透明金属导电层可以增强p型金属电极和p型欧姆接触层之间的横向接触均匀性，以避免由于第二接触扩散金属层的不均匀分布引起的局部发光 在第三接触扩散金属层内。 GaN基LED的工作电压和外部量子效率也得到显着提高。

公开(公告)号：US20070018180A1

公开(公告)日：2007-01-25

申请号：US11491124

申请日：2006-07-24

Applicant: Mu-Jen Lai ,  Schang-Jing Hon

Inventor： Mu-Jen Lai ,  Schang-Jing Hon

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

Abstract: A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

公开(公告)号：US20070018178A1

公开(公告)日：2007-01-25

申请号：US11491122

申请日：2006-07-24

Applicant: Mu-Jen Lai ,  Schang-Jing Hon

Inventor： Mu-Jen Lai ,  Schang-Jing Hon

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42

Abstract: A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

Abstract translation: GaN基发光二极管的垂直电极结构公开了构成垂直电极结构的GaN基发光二极管的氧化物窗层，其有效地降低了菲涅尔反射损失和全反射，进一步提高了发光效率。 此外，进一步包括的金属反射层引起没有选择入射角的反射，从而增加反射角的覆盖，并进一步反射从发光层发射的光。 此外，本发明的结构还可以提高散热和静电放电（ESD）的功能，从而增加部件的使用寿命并适用于高电流驱动下的使用。 此外，本发明的垂直电极结构能够降低芯片的制造方形并促进常规引线接合工艺的后期。

公开(公告)号：USD533847S1

公开(公告)日：2006-12-19

申请号：US29241847

申请日：2005-11-02

Applicant: Mu-Jen Lai

Designer： Mu-Jen Lai

公开(公告)号：US07098543B2

公开(公告)日：2006-08-29

申请号：US10982767

申请日：2004-11-08

Applicant: Mu-Jen Lai

Inventor： Mu-Jen Lai

IPC: H01L29/40

CPC classification number: H01L25/167 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/3025 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A flip-chip packaged SMD-type (surface-mount device) light emitting diode is provided. The light emitting diode chip is packaged in flip chip packages and is connected with an electrostatic protection device such as a transient voltage suppressor (TVS) or a Zener diode. The electrostatic protection device is attached with a substrate so as to form a flip-chip packaged SMD-type light emitting diode. The light emitting diode chip is connected to a lead frame of the substrate by a high electrical and heat conductive component thus the device needs no wire bonding. Due to the electrostatic protection device, the device has static control effect.

公开(公告)号：US20060033120A1

公开(公告)日：2006-02-16

申请号：US11257044

申请日：2005-10-25

Applicant: Schang-Jing Hon ,  Mu-Jen Lai

Inventor： Schang-Jing Hon ,  Mu-Jen Lai

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/14 ,  H01L33/32

Abstract: A GaN-based light-emitting device and the fabricating method for the same are described. The light-emitting device is a light-emitting body with a light extraction layer thereon. The light-emitting body has some GaN-based layers and is capable of emitting a light when energy is applied. The light extraction layer is a double layered structure having a current spreading layer and a micro-structure layer, or a single layered structure without the current spreading layer. The micro-structure layer is a TiN layer with a nano-net structure obtained by nitridation of a Ti layer or a Pt layer with metal clusters thereon obtained by annealing of a Pt layer.

Abstract translation: 对GaN系发光元件及其制造方法进行说明。 发光装置是其上具有光提取层的发光体。 发光体具有一些GaN基层，并且当施加能量时能够发光。 光提取层是具有电流扩散层和微结构层的双层结构，或没有电流扩展层的单层结构。 微结构层是通过Ti层退火获得的具有纳米网状结构的TiN层或具有金属簇的Pt层的PtN层。

公开(公告)号：US20050236636A1

公开(公告)日：2005-10-27

申请号：US10829934

申请日：2004-04-23

Applicant: Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

Inventor： Schang-Jing Hon ,  Mu-Jen Lai ,  Chi-Feng Chan ,  Jenn-Bin Huang ,  Chen-Fu Chiang

IPC: H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00

CPC classification number: H01L33/42 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32

Abstract: In a GaN-based light-emitting diode structure, a transparent conductive oxide layer is formed as a window layer on a GaN contact layer having a surface textured layer, and the textured layer acts as an ohmic contact layer with the transparent conductive oxide layer. Therefore, it is possible to reduce effectively the contact resistance and the working voltage, while the optical guiding effect is interrupted by the textured layer, to obtain thereby an enhancement of light extraction efficiency and thus an increase in the external quantum yield.

Abstract translation: 在基于GaN的发光二极管结构中，在具有表面纹理化层的GaN接触层上形成透明导电氧化物层作为窗口层，并且纹理化层用作与透明导电氧化物层的欧姆接触层。 因此，可以有效地降低接触电阻和工作电压，同时导光效应被纹理层中断，从而提高光提取效率，从而提高外部量子产率。

公开(公告)号：US06914315B2

公开(公告)日：2005-07-05

申请号：US10447434

申请日：2003-05-28

Applicant: Mu-Jen Lai ,  Chiung-Yu Chang

Inventor： Mu-Jen Lai ,  Chiung-Yu Chang

IPC: H01L21/00 ,  H01L31/0328

CPC classification number: H01L31/1852 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/105 ,  Y02E10/544

Abstract: The present invention relates to a GaN-based heterostructure photodiode comprising a P type layer, an N type layer, and an activity layer between the P type layer and the N type layer. The P type layer, the N type layer and the activity layer are made of GaN-based composition, and the activity layer is doped with borons so as to modulate the band gap between the P type layer and the N type layer. Therefore, the breakdown voltage can be increased and the light receiving ability can be promoted so that the photodiode to be a light receiving element can has a better performance for light detection.

Abstract translation: 本发明涉及包含P型层，N型层和P型层与N型层之间的活性层的GaN基异质结构光电二极管。 P型层，N型层和活性层由GaN基组成制成，活性层掺杂有硼，以调节P型层和N型层之间的带隙。 因此，可以提高击穿电压并且可以促进光接收能力，使得作为光接收元件的光电二极管可以具有更好的光检测性能。

公开(公告)号：US06787828B2

公开(公告)日：2004-09-07

申请号：US10635579

申请日：2003-08-07

Applicant: Terashima Kazutaka ,  Shun-Hung Hsu ,  Chiung-Yu Chang ,  Mu-Jen Lai

Inventor： Terashima Kazutaka ,  Shun-Hung Hsu ,  Chiung-Yu Chang ,  Mu-Jen Lai

IPC: H01L31062

CPC classification number: H01L31/1035

Abstract: The invention provides a method of manufacturing an optical-gate transistor. A BP buffer layer is formed on a silicone substrate first, and a first AIN layer is then formed for offsetting strain in the layers deposited on the first AIN layer. Subsequently, a GaN layer and an n-type AIN layer are successively deposited to form a hetero-junction at the interface. A selective epitaxy or anisotropic etching of a GaN-group material is conducted to form a prism-shaped, light-receiving layer with a cubic lattice. The prism-shaped, light-receiving layer focuses incident light to induce electrons in the n-type AIN layer, which then form a high-speed 2DEG in the GaN layer, thereby increasing the power and sensitivity of the transistor being controlled by illumination.

Abstract translation: 本发明提供一种制造光栅晶体管的方法。 首先在硅树脂基板上形成BP缓冲层，然后形成第一AlN层以抵消沉积在第一AlN层上的层的应变。 随后，依次沉积GaN层和n型AlN层，以在界面处形成异质结。 进行GaN基材料的选择性外延或各向异性蚀刻以形成具有立方晶格的棱镜状的光接收层。 棱镜形的光接收层聚集入射光以在n型AIN层中感应电子，然后在GaN层中形成高速2DEG，由此增加通过照明控制的晶体管的功率和灵敏度。

公开(公告)号：US07208752B2

公开(公告)日：2007-04-24

申请号：US10840267

申请日：2004-05-07

Applicant: Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

Inventor： Mu-Jen Lai ,  Schang-Jing Hon ,  Hsueh-Feng Sun ,  Shih-Ming Yang

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L33/32 ,  H01L33/14 ,  Y10S257/918

Abstract: A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

Abstract translation: 氮化镓发光二极管的结构具有包括扩散阻挡层，欧姆接触层和窗口层的透明导电窗口层。 通过使用添加的畴接触层，发光二极管的扩散阻挡层和P型半导体层被欧姆接触。 然后，通过施加扩散阻挡层来阻止窗口层与域接触层的接触的扩散，从而降低工作电压并提高透明度，阻止了接触电阻率的上升。