Resist composition and method for manufacturing semiconductor device using the resist composition
    1.
    发明授权
    Resist composition and method for manufacturing semiconductor device using the resist composition 失效
    使用抗蚀剂组合物制造半导体器件的抗蚀剂组合物和方法

    公开(公告)号:US06803170B2

    公开(公告)日:2004-10-12

    申请号:US09925679

    申请日:2001-08-10

    IPC分类号: G03F7004

    摘要: A resist composition comprises: at least one type of a first compound having two or more intramolecular adamantyl structures represented by the chemical formula 1 below; a base resin; and a second compound which generates an acid by active beam irradiation. wherein X is —(OCO)m—(CH2)n—(COO)m—, where m=0 or 1 and n=0, 1, 2 or 3 provided when n=0, m=0; and Y and Z are H, OH, F, Cl, Br, R or COOR, where Y may be Z, or Y and Z may be introduced in a single adamantyl structure and R represents a straight or branched alkyl group having 1 to 8 carbon atoms.

    摘要翻译: 抗蚀剂组合物包含:至少一种具有由下述化学式1表示的两个或更多个分子内金刚烷结构的第一化合物; 基础树脂; 和其中m是 - (OCO)m-(CH 2)n - (COO)m - ,其中m = 0或1,n = 0,1,2或3提供的第二化合物,其通过主动束照射产生酸。 当n = 0时,m = 0; 并且Y和Z是H,OH,F,Cl,Br,R或COOR,其中Y可以是Z,或者Y和Z可以被引入单金刚烷基结构中,R代表具有1-8个碳原子的直链或支链烷基 碳原子。

    Pattern forming method and projection exposure tool therefor
    4.
    发明授权
    Pattern forming method and projection exposure tool therefor 失效
    图案形成方法和投影曝光工具

    公开(公告)号:US5621497A

    公开(公告)日:1997-04-15

    申请号:US415937

    申请日:1995-04-03

    IPC分类号: G03F7/20 H01L21/30

    摘要: Disclosed is a pattern forming method including the steps of preparing second grating stripes disposed near a reticle having a mask pattern to be projected, modulating the mask pattern by emission of a light, and demodulating the modulated mask pattern by first grating stripes formed within a photosensitive film made of a material capable of reversibly inducing photochemical reaction, thereby forming the modulated image of the mask pattern within a resist film disposed under the photosensitive film. With this method, various kinds of fine patterns each being smaller than the resolution limit of a projection exposure tool used are formed.

    摘要翻译: 公开了一种图案形成方法,包括以下步骤:制备设置在具有要投射的掩模图案的掩模版附近的第二光栅条,通过发射光来调制掩模图案,以及通过在感光体内形成的第一格栅条来解调调制掩模图案 由能够可逆地诱导光化学反应的材料制成的膜,从而在设置在感光膜下方的抗蚀剂膜内形成掩模图案的调制图像。 利用这种方法,形成各种精细图案,每种精细图案都小于使用的投影曝光工具的分辨率极限。

    Process for preparing fluorine-containing polymer and photoresist composition
    5.
    发明申请
    Process for preparing fluorine-containing polymer and photoresist composition 审中-公开
    制备含氟聚合物和光致抗蚀剂组合物的方法

    公开(公告)号:US20050191578A1

    公开(公告)日:2005-09-01

    申请号:US11104554

    申请日:2005-04-13

    摘要: There is provided a process for preparing a fluorine-containing polymer for resist which is excellent in transparency in a vacuum ultraviolet region, comprises a structural unit derived from a fluorine-containing ethylenic monomer and/or a structural unit derived from a monomer which can provide an aliphatic ring structure in the polymer trunk chain and may have a fluorine atom, and has an acid-reactive group Y1 reacting with an acid or a group Y2 which can be converted to the acid-reactive group Y1, in which the fluorine-containing ethylenic monomer and/or the monomer which can provide an aliphatic ring structure in the polymer trunk chain are subjected to radical polymerization by using an organic peroxide represented by the formula (1): wherein R50 and R51 are the same or different and each is a hydrocarbon group having 1 to 30 carbon atoms which may have ether bond (an atom at an end of bond is not oxygen atom); p1 and p2 are the same or different and each is 0 or 1; p3 is 1 or 2, and also there is provided a photoresist composition comprising the obtained polymer. The fluorine-containing polymer is excellent in transparency in a vacuum ultraviolet region, and can form an ultra fine pattern as a polymer for a photoresist, particularly for a F2 resist.

    摘要翻译: 提供了一种制备真空紫外线区域的透明度优异的抗蚀剂用含氟聚合物的方法,包括衍生自含氟乙烯性单体的结构单元和/或衍生自单体的结构单元,其可以提供 聚合物主链中的脂族环结构,并且可以具有氟原子,并且具有与酸或Y 2的基团反应的酸反应性基团Y 1,其可以是 转化为酸反应性基团Y 1,其中可以在聚合物主链中提供脂族环结构的含氟乙烯性单体和/或单体通过使用 由式(1)表示的有机过氧化物:其中R 50和R 51相同或不同,并且各自为具有1至30个碳原子的烃基,其可以 具有醚键(键的末端的原子不是氧原子); p1和p2相同或不同,分别为0或1; p3为1或2,并且还提供包含所得聚合物的光致抗蚀剂组合物。 含氟聚合物在真空紫外区域的透明度优异,并且可以形成作为光致抗蚀剂的聚合物的超细图案,特别是用于F2抗蚀剂。

    Photosensitive composition
    7.
    发明授权
    Photosensitive composition 失效
    感光组合物

    公开(公告)号:US4792516A

    公开(公告)日:1988-12-20

    申请号:US373

    申请日:1987-01-05

    CPC分类号: G03F7/0166 G03F7/0085

    摘要: A photosensitive composition comprising (a) a photosensitive component such as an aromatic diazo compound or an aromatic azide, (b) a polymer and (c) a quaternary alkylammonium salt wherein each straight- or branched-chain alkyl group has 1 to 7 carbon atoms is suitable for producing a positive type or negative type photresist excellent in contrast and sensitivity in the microlithography of semiconductor elements.

    摘要翻译: 一种光敏组合物,其包含(a)光敏组分如芳族重氮化合物或芳族叠氮化物,(b)聚合物和(c)季烷基铵盐,其中每个直链或支链烷基具有1至7个碳原子 适用于制造在半导体元件的微光刻中对比度和灵敏度优异的正型或负型光电阻。