METHOD FOR PRODUCING POLYMERIZABLE PHOSPHATE ESTER
    3.
    发明申请
    METHOD FOR PRODUCING POLYMERIZABLE PHOSPHATE ESTER 有权
    生产可聚合磷酸酯酯的方法

    公开(公告)号:US20100227994A1

    公开(公告)日:2010-09-09

    申请号:US12159332

    申请日:2006-12-26

    IPC分类号: C08F230/02 C07F9/02

    摘要: The present invention relates to a method of producing a polymerizable phosphate containing at least one selected from polymerizable phosphates represented by formula (II), (III) or (IV) by a batch reaction, including a step of adding a compound represented by formula (I) into a mixture of a polymerizable phosphate reaction product containing at least one selected from polymerizable phosphates represented by formula (II), (III) or (IV), obtained by a pre-batch reaction, and phosphoric acid anhydride to react them: wherein R1 represents H or a C1-4 alkyl group, R2 represents a C2-6 alkylene group and n denotes an integer from 1 to 3.

    摘要翻译: 本发明涉及通过间歇反应制备含有选自式(II),(III)或(IV)表示的可聚合磷酸酯中的至少一种的可聚合磷酸酯的方法,包括将式(II) I)转化成含有选自由分批间反应得到的式(II),(III)或(IV)表示的可聚合磷酸酯的至少一种的可聚合磷酸酯反应产物和磷酸酐反应的混合物: 其中R1表示H或C1-4烷基,R2表示C2-6亚烷基,n表示1至3的整数。

    Method for manufacturing a semiconductor memory device with a fine structure
    4.
    发明授权
    Method for manufacturing a semiconductor memory device with a fine structure 失效
    具有精细结构的半导体存储器件的制造方法

    公开(公告)号:US06376295B1

    公开(公告)日:2002-04-23

    申请号:US09631977

    申请日:2000-08-03

    IPC分类号: H01L218238

    摘要: There is disclosed a memory cell which has a diffusion layers constituting source/drain areas formed on a p-type silicon substrate surface, and a channel area formed between the diffusion layers. Above the channel area, an insulating film of a laminated structure is formed of a silicon oxide film, a silicon nitride film and a silicon oxide film. A gate electrode is formed on the upper surface of the insulating film of the laminated structure. The gate electrode is used as a word line. Moreover, an interlayer insulating film is formed between the diffusion layer and the gate electrode. By injecting hot electrons from the substrate to the silicon nitride film in the insulating film of the laminated structure, data is written. The silicon nitride film and the diffusion layer are partially overlapped in a vertical direction, and an offset portion is disposed between the silicon nitride film and the diffusion layer.

    摘要翻译: 公开了一种存储单元,其具有构成在p型硅衬底表面上形成的源/漏区的扩散层和形成在扩散层之间的沟道区。 在通道区域之上,层叠结构的绝缘膜由氧化硅膜,氮化硅膜和氧化硅膜形成。 在层叠结构体的绝缘膜的上表面上形成栅电极。 栅电极用作字线。 此外,在扩散层和栅电极之间形成层间绝缘膜。 通过将层叠结构的绝缘膜中的热电子从基板注入氮化硅膜,写入数据。 氮化硅膜和扩散层在垂直方向上部分重叠,偏移部分设置在氮化硅膜和扩散层之间。

    Method for producing polymerizable phosphate ester
    8.
    发明授权
    Method for producing polymerizable phosphate ester 有权
    聚合磷酸酯的制造方法

    公开(公告)号:US08207367B2

    公开(公告)日:2012-06-26

    申请号:US12159332

    申请日:2006-12-26

    IPC分类号: C07F9/113

    摘要: The present invention relates to a method of producing a polymerizable phosphate containing at least one selected from polymerizable phosphates represented by formula (II), (III) or (IV) by a batch reaction, including a step of adding a compound represented by formula (I) into a mixture of a polymerizable phosphate reaction product containing at least one selected from polymerizable phosphates represented by formula (II), (III) or (IV), obtained by a pre-batch reaction, and phosphoric acid anhydride to react them: wherein R1 represents H or a C1-4 alkyl group, R2 represents a C2-6 alkylene group and n denotes an integer from 1 to 3.

    摘要翻译: 本发明涉及通过间歇反应制备含有选自式(II),(III)或(IV)表示的可聚合磷酸酯中的至少一种的可聚合磷酸酯的方法,包括将式(II) I)转化成含有选自由分批间反应得到的式(II),(III)或(IV)表示的可聚合磷酸酯的至少一种的可聚合磷酸酯反应产物和磷酸酐反应的混合物: 其中R1表示H或C1-4烷基,R2表示C2-6亚烷基,n表示1至3的整数。