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    Confetti Cannon and Method of Manufacturing and Use Thereof
    2.
    发明申请
    Confetti Cannon and Method of Manufacturing and Use Thereof 审中-公开
    五彩纸屑大炮及其制造和使用方法

    公开(公告)号：US20150111464A1

    公开(公告)日：2015-04-23

    申请号：US14288162

    申请日：2014-05-27

    Applicant: Michael Willett

    Inventor： Michael Willett

    IPC: A63H37/00

    CPC classification number: A63H37/00

    Abstract: A confetti cannon includes a one-piece housing. The one-piece housing has a confetti hopper, a launch tube, and a valve housing. The valve housing has an inlet connected to an internal valve. Whereby, the confetti hopper, the launch tube, and the valve housing are integrally formed to create the one-piece housing. The internal valve can be an electric solenoid valve for controlling the confetti cannon remotely.

    Abstract translation: 五彩纸屑大炮包括一体式的房屋。 一体式外壳具有纸屑漏斗，发射管和阀壳体。 阀壳体具有连接到内部阀的入口。 由此，纸屑料斗，发射管和阀壳体一体形成以形成一体式壳体。 内部阀门可以是用于远程控制五彩纸屑的电磁阀。

    High-temperature sensor interface and network
    3.
    发明授权
    High-temperature sensor interface and network 有权
    高温传感器接口和网络

    公开(公告)号：US08661923B1

    公开(公告)日：2014-03-04

    申请号：US13445165

    申请日：2012-04-12

    Applicant: Michael Willett ,  Greg Shaw

    Inventor： Michael Willett ,  Greg Shaw

    IPC: G01D3/036 ,  G01D21/02

    CPC classification number: G01D3/0365 ,  G01D21/02

    Abstract: The present invention is a sensor interface or network of interfaces that utilizes high-temperature electronics to operate at elevated temperatures for applications that include but are not limited to aircraft and automobile engines, vehicle frames, refineries, nuclear and chemical production plants, and in downhole drilling for petroleum and natural gas. The interface or network provide connectors for a variety of sensors with analog and digital outputs, and can in turn provide data to an automated electronic control system or a monitor. Because the sensor interface may be placed in so-called “hot zones” nearer to the sensors being monitored than other systems that use conventional electronics, the sensor interface can increase noise immunity, increase reliability, decrease cost, reduce weight, and increase space.

    Abstract translation: 本发明是一种传感器接口或接口网络，其利用高温电子设备在升高的温度下操作，用于包括但不限于飞机和汽车发动机，车架，炼油厂，核化学生产设备和井下的应用 钻石油和天然气。 接口或网络为具有模拟和数字输出的各种传感器提供连接器，并且可以向自动化电子控制系统或监视器提供数据。 由于传感器接口可以放置在比使用传统电子设备的其他系统更靠近被监测的传感器的所谓“热区”中，所以传感器接口可以增加噪声抗扰度，增加可靠性，降低成本，减轻重量并增加空间。

    Method of manufacturing sidewall spacers on a memory device, and device comprising same
    4.
    发明授权
    Method of manufacturing sidewall spacers on a memory device, and device comprising same 有权

    公开(公告)号：US07341906B2

    公开(公告)日：2008-03-11

    申请号：US11132472

    申请日：2005-05-19

    Applicant: David K. Hwang ,  Kunal Parekh ,  Michael Willett ,  Jigish Trivedi ,  Suraj Mathew ,  Greg Peterson

    Inventor： David K. Hwang ,  Kunal Parekh ,  Michael Willett ,  Jigish Trivedi ,  Suraj Mathew ,  Greg Peterson

    IPC: H01L21/8244

    CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11543

    Abstract: The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment, the method includes forming sidewall spacers on a memory device comprised of a memory array and at least one peripheral circuit by forming a first sidewall spacer adjacent a word line structure in the memory array, the first sidewall spacer having a first thickness and forming a second sidewall spacer adjacent a transistor structure in the peripheral circuit, the second sidewall spacer having a second thickness that is greater than the first thickness, wherein the first and second sidewall spacers comprise material from a single layer of spacer material. In one illustrative embodiment, the device includes a memory array comprised of a plurality of word line structures, each of the plurality of word line structures having a first sidewall spacer formed adjacent thereto, the first sidewall spacer having a first thickness, and a peripheral circuit comprised of at least one transistor having a second sidewall spacer formed adjacent thereto, the second sidewall spacer having a second thickness that is greater than the first thickness, the first and second sidewall spacers comprised of a material from a single layer of spacer material.

    Systems and Methods of Order Fulfillment
    5.
    发明申请
    Systems and Methods of Order Fulfillment 审中-公开

    公开(公告)号：US20180108075A1

    公开(公告)日：2018-04-19

    申请号：US15784081

    申请日：2017-10-13

    Applicant: Michael Willett

    Inventor： Michael Willett

    IPC: G06Q30/06 ,  G06Q10/08

    CPC classification number: G06Q30/0635 ,  G06Q10/087

    Abstract: Example embodiments of the systems and methods of order fulfillment provided herein receive an order from a potential customer and provide automatic fulfillment by one or more of multiple suppliers, based on one or more factors, the factors including at least one of distance, product availability, pricing, equipment age, and percentage of order fulfillment capability. In an example embodiment, one or more databases will be maintained, or one or more tables within a database. One database/table is for the consumer, one database/table for the enablement processing, which may be referred to as a call center (though no actual calls may take place), and a third vendor database/table.

    Method of manufacturing sidewall spacers on a memory device, and device comprising same
    8.
    发明授权
    Method of manufacturing sidewall spacers on a memory device, and device comprising same 有权
    在存储器件上制造侧壁间隔物的方法，以及包括其的装置

    公开(公告)号：US07601591B2

    公开(公告)日：2009-10-13

    申请号：US12020752

    申请日：2008-01-28

    Applicant: David K. Hwang ,  Kunal Parekh ,  Michael Willett ,  Jigish Trivedi ,  Suraj Mathew ,  Greg Peterson

    Inventor： David K. Hwang ,  Kunal Parekh ,  Michael Willett ,  Jigish Trivedi ,  Suraj Mathew ,  Greg Peterson

    IPC: H01L21/8247

    CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11543

    Abstract: The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment, the method includes forming sidewall spacers on a memory device comprised of a memory array and at least one peripheral circuit by forming a first sidewall spacer adjacent a word line structure in the memory array, the first sidewall spacer having a first thickness and forming a second sidewall spacer adjacent a transistor structure in the peripheral circuit, the second sidewall spacer having a second thickness that is greater than the first thickness, wherein the first and second sidewall spacers comprise material from a single layer of spacer material. In one illustrative embodiment, the device includes a memory array comprised of a plurality of word line structures, each of the plurality of word line structures having a first sidewall spacer formed adjacent thereto, the first sidewall spacer having a first thickness, and a peripheral circuit comprised of at least one transistor having a second sidewall spacer formed adjacent thereto, the second sidewall spacer having a second thickness that is greater than the first thickness, the first and second sidewall spacers comprised of a material from a single layer of spacer material.

    Abstract translation: 本发明一般涉及在存储器件上制造侧壁间隔物的方法，以及包括这种侧壁间隔物的存储器件。 在一个说明性实施例中，该方法包括在由存储器阵列和至少一个外围电路构成的存储器件上形成侧壁间隔物，该隔离物通过形成邻近存储器阵列中的字线结构的第一侧壁间隔物，第一侧壁间隔物具有第一厚度 以及在所述外围电路中形成与所述晶体管结构相邻的第二侧壁间隔物，所述第二侧壁间隔物具有大于所述第一厚度的第二厚度，其中所述第一和第二侧壁间隔物包括来自单层间隔物材料的材料。 在一个说明性实施例中，该装置包括由多个字线结构组成的存储器阵列，多个字线结构中的每一个具有与其相邻形成的第一侧壁间隔物，第一侧壁间隔物具有第一厚度，外围电路 包括至少一个晶体管，其具有与其相邻形成的第二侧壁间隔物，所述第二侧壁间隔物具有大于第一厚度的第二厚度，所述第一和第二侧壁间隔物由来自单层间隔物材料的材料构成。

    Method of manufacturing sidewall spacers on a memory device, and device comprising same
    9.
    发明申请
    Method of manufacturing sidewall spacers on a memory device, and device comprising same 有权

    公开(公告)号：US20060263969A1

    公开(公告)日：2006-11-23

    申请号：US11132472

    申请日：2005-05-19

    Applicant: David Hwang ,  Kunal Parekh ,  Michael Willett ,  Jigish Trivedi ,  Suraj Mathew ,  Greg Peterson

    Inventor： David Hwang ,  Kunal Parekh ,  Michael Willett ,  Jigish Trivedi ,  Suraj Mathew ,  Greg Peterson

    IPC: H01L21/8244

    CPC classification number: H01L27/11526 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11543

    Abstract: The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall spacers. In one illustrative embodiment, the method includes forming sidewall spacers on a memory device comprised of a memory array and at least one peripheral circuit by forming a first sidewall spacer adjacent a word line structure in the memory array, the first sidewall spacer having a first thickness and forming a second sidewall spacer adjacent a transistor structure in the peripheral circuit, the second sidewall spacer having a second thickness that is greater than the first thickness, wherein the first and second sidewall spacers comprise material from a single layer of spacer material. In one illustrative embodiment, the device includes a memory array comprised of a plurality of word line structures, each of the plurality of word line structures having a first sidewall spacer formed adjacent thereto, the first sidewall spacer having a first thickness, and a peripheral circuit comprised of at least one transistor having a second sidewall spacer formed adjacent thereto, the second sidewall spacer having a second thickness that is greater than the first thickness, the first and second sidewall spacers comprised of a material from a single layer of spacer material.

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