公开(公告)号：US07230322B2

公开(公告)日：2007-06-12

申请号：US11119745

申请日：2005-05-03

申请人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

发明人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

IPC分类号： H01L23/495

CPC分类号： H01L24/84 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/77 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/7865 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85205 ,  H01L2224/85895 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.

摘要翻译： 提供一种半导体器件，其包括具有多个电极的半导体元件，引线框架的多个接合部分，电连接多个电极中的至少一个电极和多个接合中的一个的板状电流通路材料 部分，封装具有多个电极的半导体元件的壳体，引线框架的多个接合部分和电流通路材料，其中板状电流通路材料被布置成直接接合到多个电极中的一个 的电极和多个接合部中的一个，并且电流通路材料的中间部分形成为与半导体元件的表面分开。 还提供了一种制造该方法的方法。

公开(公告)号：US20070052075A1

公开(公告)日：2007-03-08

申请号：US11551383

申请日：2006-10-20

申请人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

发明人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L24/84 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/77 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/7865 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85205 ,  H01L2224/85895 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.

摘要翻译： 提供一种半导体器件，其包括具有多个电极的半导体元件，引线框架的多个接合部分，电连接多个电极中的至少一个电极和多个接合中的一个的板状电流通路材料 部分，封装具有多个电极的半导体元件的壳体，引线框架的多个接合部分和电流通路材料，其中板状电流通路材料被布置成直接接合到多个电极中的一个 的电极和多个接合部中的一个，并且电流通路材料的中间部分形成为与半导体元件的表面分开。 还提供了一种制造该方法的方法。

公开(公告)号：US07804160B2

公开(公告)日：2010-09-28

申请号：US11268555

申请日：2005-11-08

申请人： Masataka Nanba ,  Shigeru Tanabe

发明人： Masataka Nanba ,  Shigeru Tanabe

IPC分类号： H01L23/495

CPC分类号： H01L24/77 ,  B23K20/10 ,  B23K2101/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： An ultrasonic bonding equipment for manufacturing a semiconductor device comprises a tip portion. The tip portion has a top surface which is faced to a member to be bonded, and propagates an ultrasonic vibration to the top surface. A plurality of protruding portions are provided on the top surface. Each of the protruding portions has: a first pair of opposite side surfaces inclined with respect to the top surface; and a second pair of opposite side surfaces substantially vertical to the top surface. A semiconductor device comprises: a semiconductor chip; a lead; and a bonding strap electrically connecting the semiconductor chip and the lead. A recess is formed on an upper surface of the bonding strap in at least one of a first region where the bonding strap and the semiconductor chip are connected and a second region where the bonding strap and the lead is connected. A first pair of opposite side surfaces of the recess are inclined with respect to the upper surface of the bonding strap, and a second pair of opposite side surfaces of the recess are substantially vertical to the upper surface of the bonding strap.

摘要翻译： 用于制造半导体器件的超声波接合设备包括尖端部分。 尖端部分具有面向要接合的构件的顶表面，并且将超声波振动传播到顶表面。 在顶面设有多个突出部。 每个突出部分具有：相对于顶表面倾斜的第一对相对侧表面; 以及基本上垂直于顶表面的第二对相对侧表面。 半导体器件包括：半导体芯片; 铅; 以及电连接半导体芯片和引线的接合带。 在接合带和半导体芯片连接的第一区域和连接带和引线连接的第二区域中的至少一个中，在接合带的上表面上形成凹部。 凹槽的第一对相对侧表面相对于粘合带的上表面倾斜，并且凹槽的第二对相对的侧表面基本上垂直于粘合带的上表面。

公开(公告)号：US20060118932A1

公开(公告)日：2006-06-08

申请号：US11268555

申请日：2005-11-08

申请人： Masataka Nanba ,  Shigeru Tanabe

发明人： Masataka Nanba ,  Shigeru Tanabe

IPC分类号： H01L23/02

CPC分类号： H01L24/77 ,  B23K20/10 ,  B23K2101/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： An ultrasonic bonding equipment for manufacturing a semiconductor device comprises a tip portion. The tip portion has a top surface which is faced to a member to be bonded, and propagates an ultrasonic vibration to the top surface. A plurality of protruding portions are provided on the top surface. Each of the protruding portions has: a first pair of opposite side surfaces inclined with respect to the top surface; and a second pair of opposite side surfaces substantially vertical to the top surface. A semiconductor device comprises: a semiconductor chip; a lead; and a bonding strap electrically connecting the semiconductor chip and the lead. A recess is formed on an upper surface of the bonding strap in at least one of a first region where the bonding strap and the semiconductor chip are connected and a second region where the bonding strap and the lead is connected. A first pair of opposite side surfaces of the recess are inclined with respect to the upper surface of the bonding strap, and a second pair of opposite side surfaces of the recess are substantially vertical to the upper surface of the bonding strap.

摘要翻译： 用于制造半导体器件的超声波接合设备包括尖端部分。 尖端部分具有面向要接合的构件的顶表面，并且将超声波振动传播到顶表面。 在顶面设有多个突出部。 每个突出部分具有：相对于顶表面倾斜的第一对相对侧表面; 以及基本上垂直于顶表面的第二对相对侧表面。 半导体器件包括：半导体芯片; 铅; 以及电连接半导体芯片和引线的接合带。 在接合带和半导体芯片连接的第一区域和连接带和引线连接的第二区域中的至少一个中，在接合带的上表面上形成凹部。 凹槽的第一对相对侧表面相对于粘合带的上表面倾斜，并且凹槽的第二对相对的侧表面基本上垂直于粘合带的上表面。

公开(公告)号：US20050212101A1

公开(公告)日：2005-09-29

申请号：US11119745

申请日：2005-05-03

申请人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

发明人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

IPC分类号： H01L21/60 ,  H01L21/607 ,  H01L23/48 ,  H01L23/495 ,  H01L29/78

CPC分类号： H01L24/84 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/77 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/7865 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85205 ,  H01L2224/85895 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.

摘要翻译： 提供一种半导体器件，其包括具有多个电极的半导体元件，引线框架的多个接合部分，电连接多个电极中的至少一个电极和多个接合中的一个的板状电流通路材料 部分，封装具有多个电极的半导体元件的壳体，引线框架的多个接合部分和电流通路材料，其中板状电流通路材料被布置成直接接合到多个电极中的一个 的电极和多个接合部中的一个，并且电流通路材料的中间部分形成为与半导体元件的表面分开。 还提供了一种制造该方法的方法。

公开(公告)号：US20100323476A1

公开(公告)日：2010-12-23

申请号：US12853970

申请日：2010-08-10

申请人： Masataka NANBA ,  Shigeru Tanabe

发明人： Masataka NANBA ,  Shigeru Tanabe

IPC分类号： H01L21/607

CPC分类号： H01L24/77 ,  B23K20/10 ,  B23K2101/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/206

摘要： An ultrasonic bonding equipment for manufacturing a semiconductor device comprises a tip portion. The tip portion has a top surface which is faced to a member to be bonded, and propagates an ultrasonic vibration to the top surface. A plurality of protruding portions are provided on the top surface. Each of the protruding portions has: a first pair of opposite side surfaces inclined with respect to the top surface; and a second pair of opposite side surfaces substantially vertical to the top surface. A semiconductor device comprises: a semiconductor chip; a lead; and a bonding strap electrically connecting the semiconductor chip and the lead. A recess is formed on an upper surface of the bonding strap in at least one of a first region where the bonding strap and the semiconductor chip are connected and a second region where the bonding strap and the lead is connected. A first pair of opposite side surfaces of the recess are inclined with respect to the upper surface of the bonding strap, and a second pair of opposite side surfaces of the recess are substantially vertical to the upper surface of the bonding strap.

摘要翻译： 用于制造半导体器件的超声波接合设备包括尖端部分。 尖端部分具有面向要接合的构件的顶表面，并且将超声波振动传播到顶表面。 在顶面设有多个突出部。 每个突出部分具有：相对于顶表面倾斜的第一对相对侧表面; 以及基本上垂直于顶表面的第二对相对侧表面。 半导体器件包括：半导体芯片; 铅; 以及电连接半导体芯片和引线的接合带。 在接合带和半导体芯片连接的第一区域和连接带和引线连接的第二区域中的至少一个中，在接合带的上表面上形成凹部。 凹槽的第一对相对侧表面相对于粘合带的上表面倾斜，并且凹槽的第二对相对的侧表面基本上垂直于粘合带的上表面。

公开(公告)号：US07364950B2

公开(公告)日：2008-04-29

申请号：US11551383

申请日：2006-10-20

申请人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

发明人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

IPC分类号： H01L21/00

CPC分类号： H01L24/84 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/77 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/7865 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85205 ,  H01L2224/85895 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.

摘要翻译： 提供一种半导体器件，其包括具有多个电极的半导体元件，引线框架的多个接合部分，电连接多个电极中的至少一个电极和多个接合中的一个的板状电流通路材料 部分，封装具有多个电极的半导体元件，引线框架的多个接合部分和电流通路材料的壳体，其中板状电流通路材料被布置成直接接合到多个电极中的一个 的电极和多个接合部中的一个，并且电流通路材料的中间部分形成为与半导体元件的表面分开。 还提供了一种制造该方法的方法。

公开(公告)号：US20050191439A1

公开(公告)日：2005-09-01

申请号：US10516237

申请日：2003-06-03

申请人： Takeshi Hirose ,  Akihiko Kizaki ,  Keiichi Sato ,  Kei Oizumi ,  Sanji Harada ,  Masataka Nanba

发明人： Takeshi Hirose ,  Akihiko Kizaki ,  Keiichi Sato ,  Kei Oizumi ,  Sanji Harada ,  Masataka Nanba

IPC分类号： B41M1/30 ,  B41M7/00 ,  B41M5/00

CPC分类号： B41M7/009 ,  B41M7/0045 ,  B41M7/0081

摘要： A coating material of an electron beam curable type is printed or coated onto a substrate of a heat shrinkable plastic film. Then, the coating material is cured by electron beam irradiation to form a coating layer. As a consequence, a shrinkable film including the substrate and the coating layer disposed thereon is obtained.

摘要翻译： 将电子束固化型涂料印刷或涂布在热收缩塑料膜的基材上。 然后，通过电子束照射固化涂层材料以形成涂层。 结果，获得了包括基板和设置在其上的涂层的可收缩薄膜。

公开(公告)号：US06903450B2

公开(公告)日：2005-06-07

申请号：US10686587

申请日：2003-10-17

申请人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

发明人： Norihide Funato ,  Masataka Nanba ,  Hiroshi Sawano

IPC分类号： H01L21/60 ,  H01L21/607 ,  H01L23/48 ,  H01L23/495 ,  H01L29/78

CPC分类号： H01L24/84 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/77 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/37011 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/7865 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85205 ,  H01L2224/85895 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.