- 专利标题： Semiconductor device and method of manufacturing the same
-
申请号： US10686587申请日： 2003-10-17
-
公开(公告)号： US06903450B2公开(公告)日： 2005-06-07
- 发明人: Norihide Funato , Masataka Nanba , Hiroshi Sawano
- 申请人： Norihide Funato , Masataka Nanba , Hiroshi Sawano
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-120309 20010418
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/607 ; H01L23/48 ; H01L23/495 ; H01L29/78
摘要：
A semiconductor device is provided including a semiconductor element having a plurality of electrodes, a plurality of bonding portions of a lead frame, a plate-like current path material which electrically connects at least one of the plurality of electrodes and one of the plurality of bonding portions, a housing which packages the semiconductor element having the plurality of electrodes, the plurality of bonding portions of the lead frame, and the current path material, wherein the plate-like current path material is arranged to be directly bonded to one of the plurality of electrodes and one of the plurality of bonding portions, and the middle portion of the current path material is formed apart from the surface of the semiconductor element. A method of manufacturing the same is also provided.
公开/授权文献
信息查询
IPC分类:
