摘要:
The present invention is to provide a process for preparing optically active tetrahydroquinoline derivatives which can be used for the treatment and/or prevention of diseases such as arteriosclerotic diseases, dyslipidemia and the like, and a process for preparing synthetic intermediates thereof.Specifically, (2R,4S)-2-ethyl-6-trifluoromethyl-1,2,3,4-tetrahydroquinolin-4-ylamine or a salt thereof is prepared with fewer steps without using an optical resolution, and the optically active tetrahydroquinoline derivatives are obtained from the amine compound.
摘要:
The present invention relates to a method for preparing an optically active cyclic alcohol compound represented by general formula [I]: [wherein R represents a hydrogen atom or a protecting group for amino group, and * represents an asymmetric carbon atom.] which comprises a step of subjecting a cyclic ketone compound represented by general formula [II]: [wherein R has the same meaning as defined above.] to asymmetric reduction (A) in the presence of an optically active oxazaborolidine compound and a boron hydride compound, or (B) in the presence of an asymmetric transition metal complex obtained from a transition metal compound and an asymmetric ligand and a hydrogen donor, and relates to said compound.
摘要:
A shield connector (C) includes a tubular metallic shield shell (30) integrally attached to the outer circumferential surface of a housing (10) made of resin by insert molding. The shield shell (30) is formed with a cut (32) extending between opposite ends in a longitudinal direction, and a pair of opening preventing pieces (34A, 34B) which extend radially inward or outward, circumferentially face each other and can come into contact with each other when edges (33A, 33B) at the opposite sides of the cut (32) are displaced in directions away from each other are provided on the opposite edges (33A, 33B) of the shield shell 30 facing each other with the cut (32) therebetween.
摘要:
The present invention provides a method of manufacturing a semiconductor device and a semiconductor device that allow use of interlayer and interconnect insulating films having a low dielectric constant in forming a dual damascene structure. A first insulating film, a second insulating film, a first-mask forming layer, a second-mask forming layer, a third-mask forming layer, and a fourth-mask forming layer are sequentially deposited over a substrate. The fourth-mask forming layer is patterned to form a fourth mask having an interconnect trench pattern. After a resist mask is formed on the fourth mask, the layers to the second insulating film are etched to open via holes. The third-mask forming layer is etched through the fourth mask to thereby form a third mask having the interconnect trench pattern and to extend the via holes downward partway across the first insulating film. The second-mask forming layer is etched through the fourth mask to thereby form a second mask having the interconnect trench pattern, and the first insulating film that remains under the bottoms of the via holes is removed. Subsequently, the second insulating film is etched through the second mask to thereby form an interconnect trench, and then the second mask is removed.
摘要:
Each terminal (3) of a bulb socket (1) has a power-supplying tab (31) and a bulb connecting portion (32) that are integral with one another. The bulb connecting portion (32) is on an extension of the power-supplying tab (31) extending along an inserting direction into a connector accommodating portion (25). Thus, the bulb socket (1) is reduced in height, the number of assembling steps is reduced, and the deformation of the terminals can be avoided. Further, a reduction in the number of parts leads to reduced production costs.
摘要:
In a process of secondary insert molding, a molten resin is injected into a cavity (236) for secondary molding that is formed by bring a clipping portion (234) of a mold for secondary molding into contact with an outer surface of a primary molding article (216). Projecting areas of ends (214A) of terminals (214) on an outer surface of a resin molding portion (210) are formed of a primary molding resin portion (219). Thus, the cavity (236) for secondary molding and clipping portion (234) are in a position where the ends (214A) of the terminals (214) do not contact the cavity (236) and clipping portion (234).
摘要:
Electric wires 41 are housed within a housing space 36 and make contact with bulb-inking contacting members 22, all of the bulbs 42 being connected via bulb terminal fittings 19 and bulb-linking contacting members 22. A multiple-light lighting fixture can be made suitable for a varying number of bulbs or for bulbs of varying pitch merely by altering the length of the electric wires 41. As a result costs can be reduced compared to the case in which a bus bar is formed in a unified manner with terminal areas which make contact with bulbs, and in which a plurality of types of bus bars are produced in order to correspond to the number of bulbs or the pitch thereof.
摘要:
A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.
摘要:
Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.
摘要:
The present invention relates to a method for preparing an optically active cyclic alcohol compound represented by general formula [I]: [wherein R represents a hydrogen atom or a protecting group for amino group, and * represents an asymmetric carbon atom.] which comprises a step of subjecting a cyclic ketone compound represented by general formula [II]: [wherein R has the same meaning as defined above.] to asymmetric reduction (A) in the presence of an optically active oxazaborolidine compound and a boron hydride compound, or (B) in the presence of an asymmetric transition metal complex obtained from a transition metal compound and an asymmetric ligand and a hydrogen donor, and relates to said compound.