摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, the resin containing (a) a repeating unit represented by the following formula (AN-01), (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin that contains at least either a fluorine atom or a silicon atom and contains a repeating unit having a group capable of decomposing by the action of an alkali developer to increase the solubility in an alkali developer: wherein the variables in formula (AN-01) are defined in the description.
摘要:
According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a resin containing a repeating unit (A) containing both a structural moiety (S1) that is decomposed by an action of an acid to thereby generate an alkali-soluble group and a structural moiety (S2) that is decomposed by an action of an alkali developer to thereby increase its rate of dissolution into the alkali developer, and a compound that generates an acid when exposed to actinic rays or radiation.
摘要:
A surface-treating agent for forming a resist pattern, includes: a compound represented by formula (1) as defined in the specification, wherein the surface-treating agent is used in a step between a formation of a first resist pattern on a first resist film and a formation of a second resist film on the first resist pattern to form a second resist pattern, and a pattern-forming method uses the surface-treating agent.
摘要:
An object of the present invention is to solve the technical task of enhancing the performance in micro-photofabrication using far ultraviolet light, particularly ArF excimer laser at a wavelength of 193 nm, and more specifically, provide a negative resist composition hardly allowing occurrence of pattern collapse and exhibiting good resolution even in the formation of a fine pattern, and a resist pattern forming method using the composition, which are a negative resist composition comprising (A) an alkali-soluble resin, (B) a compound that contains a low molecular compound having a molecular weight of 2,000 or less and having an oxetane structure, and (C) a cationic photopolymerization initiator, and a resist pattern forming method using the composition.
摘要:
A surface-treating agent for forming a resist pattern, includes: a compound represented by formula (1) as defined in the specification, wherein the surface-treating agent is used in a step between a formation of a first resist pattern on a first resist film and a formation of a second resist film on the first resist pattern to form a second resist pattern, and a pattern-forming method uses the surface-treating agent.
摘要:
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, the resin containing (a) a repeating unit represented by the following formula (AN-01), (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin that contains at least either a fluorine atom or a silicon atom and contains a repeating unit having a group capable of decomposing by the action of an alkali developer to increase the solubility in an alkali developer: wherein the variables in formula (AN-01) are defined in the description.
摘要:
An actinic ray-sensitive or radiation-sensitive resin composition, and a resist film and a pattern forming method each using the composition are provided, the composition including: (A) a resin containing a repeating unit having a specific lactone structure and a repeating unit having a specific sulfonamide structure and being capable of increasing the solubility of the resin (A) in an alkali developer by the action of an acid; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.
摘要:
A surface-treating agent for forming a resist pattern, includes: a compound represented by formula (1) as defined in the specification, wherein the surface-treating agent is used in a step between a formation of a first resist pattern on a first resist film and a formation of a second resist film on the first resist pattern to form a second resist pattern, and a pattern-forming method uses the surface-treating agent.
摘要:
There are provided a surface-treating agent containing a specific compound having an amino group and an aromatic ring as a surface-treating agent for a freezing process for chemically treating a first resist pattern used in a freezing process of chemically treating and thereby qualitatively changing the first resist pattern so as not to dissolve in a second resist solution in order to form a second resist film on the first resist pattern and form a second resist pattern after the first resist pattern is formed on a first resist film, wherein the surface-treating agent performs a chemical treatment on the first resist pattern to satisfy the requirements that the first resist pattern does not dissolve in the second resist solution, the dimension of the first resist pattern is not changed, and the first resist pattern and the second resist pattern have the same dry etching resistance; and a pattern forming method using the surface-treating agent.
摘要:
A surface-treating agent for forming a resist pattern, includes: a compound represented by formula (1) as defined in the specification, wherein the surface-treating agent is used in a step between a formation of a first resist pattern on a first resist film and a formation of a second resist film on the first resist pattern to form a second resist pattern, and a pattern-forming method uses the surface-treating agent.