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    Perylene tetracarboxylic acid bisimide derivative, N-type semiconductor, a method for producing N-type semiconductor, and electronic device
    1.
    发明授权
    Perylene tetracarboxylic acid bisimide derivative, N-type semiconductor, a method for producing N-type semiconductor, and electronic device 有权
    苝四羧酸双酰亚胺衍生物，N型半导体，N型半导体的制造方法以及电子器件

    公开(公告)号：US08987044B2

    公开(公告)日：2015-03-24

    申请号：US14009709

    申请日：2012-04-04

    申请人： Masahiro Funahashi ,  Nozomi Takeuchi

    发明人： Masahiro Funahashi ,  Nozomi Takeuchi

    IPC分类号： H01L51/00 ,  C07F7/02 ,  C07D471/04 ,  C07F7/08 ,  H01L51/50

    CPC分类号： H01L51/0003 ,  C07D471/04 ,  C07F7/0838 ,  C09B69/008 ,  C09B69/102 ,  H01L51/0053 ,  H01L51/0094 ,  H01L51/5072 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, In the chemical formula (I), R1 to R6 each represents a hydrogen atom, organooligosiloxane, or any substituent, at least one of R1 to R6 represents a monovalent substituent derived from organooligosiloxane, L1 and L2 each represents a single bond or a linking group, R7 to R10 each represents a lower alkyl group or a halogen, and o, p, q, and r each represents an integer from 0 to 2.

    摘要翻译： 本发明提供能够形成载流子迁移率高且具有优异溶解性的n型半导体的苝四羧酸双酰亚胺衍生物。 苝四羧酸双酰亚胺衍生物是由下列化学式（I）表示的苝四羧酸双酰亚胺衍生物，苝四羧酸双酰亚胺衍生物的互变异构体或立体异构体，或苝四羧酸双酰亚胺衍生物的盐或互变异构体或立体异构体 在化学式（I）中，R 1〜R 6各自表示氢原子，有机低聚硅氧烷或任何取代基，R 1〜R 6中的至少一个表示来自有机低聚硅氧烷的一价取代基，L1和L2各自表示单键或连接 基团，R 7至R 10各自表示低级烷基或卤素，o，p，q和r各自表示0至2的整数。

    Dielectric filter with adjustable frequency bandwidth
    2.
    发明授权
    Dielectric filter with adjustable frequency bandwidth 失效
    介质滤波器，带宽可调

    公开(公告)号：US06304159B1

    公开(公告)日：2001-10-16

    申请号：US09458669

    申请日：1999-12-10

    申请人： Shoji Ono ,  Katsuhisa Murakami ,  Masahiro Funahashi

    发明人： Shoji Ono ,  Katsuhisa Murakami ,  Masahiro Funahashi

    IPC分类号： H01P120

    CPC分类号： H01P1/2056

    摘要： A dielectric filter comprising a plurality of juxtaposed resonators provided within a dielectric ceramic block, an outer conductor layer provided on outer surface portions of the block with exception of an open-circuit end surface, and input/output pads provided on one lateral side surface of the block at respective positions close to the open-circuit end surface and opposite to the associated resonators, wherein a strip conductor member is provided transversely between the adjacent through holes on the first end surface of the block so that one end of the strip conductor member is connected to the outer conductor layer on one of a first and second lateral side surfaces of the block, and other end is separated from the other lateral side surface to form an open circuit end, whereby defining a non-conductive region between the open circuit end of the strip conductor member and the outer conductor layer on the other lateral side surface.

    摘要翻译： 一种介质滤波器，包括设置在电介质陶瓷块内的多个并置的谐振器，设置在所述块的外表面部分上的外导体层，除了开路端面之外，以及输入/输出焊盘， 所述块位于靠近所述开路端面并且与相关联的谐振器相对的各个位置处，其中，带状导体构件横向地设置在所述块的所述第一端面上的相邻通孔之间，使得所述带状导体构件的一端 在所述块的第一和第二横向侧表面中的一个上连接到所述外部导体层，并且另一端与另一个侧面表面分离以形成开路端，由此在所述开路之间限定非导电区域 带状导体构件的端部和另一侧面上的外导体层。

    Liquid crystalline compounds and process for producing the same
    3.
    发明授权
    Liquid crystalline compounds and process for producing the same 失效
    液晶化合物及其制备方法

    公开(公告)号：US06174455B1

    公开(公告)日：2001-01-16

    申请号：US09025249

    申请日：1998-02-18

    申请人： Junichi Hanna ,  Masahiro Funahashi ,  Komei Kafuku ,  Kyoko Kogo

    发明人： Junichi Hanna ,  Masahiro Funahashi ,  Komei Kafuku ,  Kyoko Kogo

    IPC分类号： C09K1932

    CPC分类号： C07C15/24 ,  C07B2200/01 ,  C07C43/202 ,  C07C43/225 ,  C07C69/63 ,  C07C69/76 ,  C07C205/35 ,  C07C245/10 ,  C07C251/24 ,  C07C323/18 ,  C07C323/62 ,  C09K19/322 ,  G03G5/02

    摘要： A liquid crystalline compound having a novel structure and a process for producing the same are provided. The liquid crystalline compound is represented by the following general formula (I): wherein R1 and R2 each independently represent a straight-chain, branched or cyclic, saturated or unsaturated hydrocarbon group having 1 to 22 carbon atoms and may be attached directly to the aromatic ring without through X1 or X2; R3 represents a hydrogen atom, a cyano group, a nitro group, a fluorine atom, or a methyl group; and X1 and X2 each independently represent an oxygen atom, a sulfur atom, or a —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCO—, or —CH2— group.

    摘要翻译： 提供具有新颖结构的液晶化合物及其制备方法。 液晶化合物由以下通式（I）表示：其中R 1和R 2各自独立地表示具有1至22个碳原子的直链，支链或环状，饱和或不饱和的烃基，并且可以直接连接到芳族 环通过X1或X2; R3表示氢原子，氰基，硝基，氟原子或甲基; 并且X 1和X 2各自独立地表示氧原子，硫原子或-CO-，-OCO - ， - COO - ， - N = CH - ， - CONH-，-NH-，-NHCO-或-CH 2 - 组。

    PERYLENE TETRACARBOXYLIC ACID BISIMIDE DERIVATIVE, N-TYPE SEMICONDUCTOR, A METHOD FOR PRODUCING N-TYPE SEMICONDUCTOR, AND ELECTRONIC DEVICE
    6.
    发明申请
    PERYLENE TETRACARBOXYLIC ACID BISIMIDE DERIVATIVE, N-TYPE SEMICONDUCTOR, A METHOD FOR PRODUCING N-TYPE SEMICONDUCTOR, AND ELECTRONIC DEVICE 有权
    季戊四醇四羧酸衍生物，N型半导体，生产N-型半导体的方法和电子器件

    公开(公告)号：US20140024171A1

    公开(公告)日：2014-01-23

    申请号：US14009709

    申请日：2012-04-04

    申请人： Masahiro Funahashi ,  Nozomi Takeuchi

    发明人： Masahiro Funahashi ,  Nozomi Takeuchi

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0003 ,  C07D471/04 ,  C07F7/0838 ,  C09B69/008 ,  C09B69/102 ,  H01L51/0053 ,  H01L51/0094 ,  H01L51/5072 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, In the chemical formula (I), R1 to R6 each represents a hydrogen atom, organooligosiloxane, or any substituent, at least one of R1 to R6 represents a monovalent substituent derived from organooligosiloxane, L1 and L2 each represents a single bond or a linking group, R7 to R10 each represents a lower alkyl group or a halogen, and o, p, q, and r each represents an integer from 0 to 2.

    摘要翻译： 本发明提供能够形成载流子迁移率高且具有优异溶解性的n型半导体的苝四羧酸双酰亚胺衍生物。 苝四羧酸双酰亚胺衍生物是由下列化学式（I）表示的苝四羧酸双酰亚胺衍生物，苝四羧酸双酰亚胺衍生物的互变异构体或立体异构体，或苝四羧酸双酰亚胺衍生物的盐或互变异构体或立体异构体 在化学式（I）中，R 1〜R 6各自表示氢原子，有机低聚硅氧烷或任何取代基，R 1〜R 6中的至少一个表示来自有机低聚硅氧烷的一价取代基，L1和L2各自表示单键或连接 基团，R 7至R 10各自表示低级烷基或卤素，o，p，q和r各自表示0至2的整数。

    SMECTIC LIQUID CRYSTAL COMPOUND
    7.
    发明申请
    SMECTIC LIQUID CRYSTAL COMPOUND 失效
    精密液晶化合物

    公开(公告)号：US20100237327A1

    公开(公告)日：2010-09-23

    申请号：US12303751

    申请日：2007-06-05

    申请人： Masahiro Funahashi ,  Fuxapei Chan ,  Nobuyuki Tamaoki

    发明人： Masahiro Funahashi ,  Fuxapei Chan ,  Nobuyuki Tamaoki

    IPC分类号： H01L51/30 ,  H01L51/40 ,  C07D409/14

    CPC分类号： H01L51/0076 ,  C09K19/3491 ,  H01L51/0068 ,  H01L51/5048

    摘要： According to the present invention, a liquid crystal semiconductor capable of exhibiting a highly ordered smectic phase at approximately room temperature, being used for formation of a smectic liquid crystal thin film that is stable at room temperature by a solution process, and showing excellent ambipolar charge-transporting properties, a thin film transistor comprising the same, and the like are provided.Also, the following are provided: a smectic liquid crystal compound represented by the following general formula (1) wherein R1 represents a straight-chain alkyl group having 1 to 8 carbon atoms, R2 represents an alkyl or alkoxy group having 1 to 8 carbon atoms, and “n” is an integer of 0 to 3; an ambipolar charge-transporting material comprising the smectic liquid crystal compound; an organic semiconductor thin film having a thin film layer comprising the smectic liquid crystal compound; and a thin film transistor comprising the organic semiconductor thin film.

    摘要翻译： 根据本发明，能够在大约室温下表现出高度顺序的近晶相的液晶半导体用于通过溶液法在室温下稳定的近晶液晶薄膜的形成，并且显示优异的双极电荷 - 输送性质，包含该薄膜晶体管的薄膜晶体管等。 另外，提供以下通式（1）表示的近晶型液晶化合物，其中R1表示碳原子数1〜8的直链烷基，R2表示碳原子数1〜8的烷基或烷氧基 ，“n”为0〜3的整数。 包含近晶液晶化合物的双极电荷输送材料; 具有由层状液晶性化合物构成的薄膜层的有机半导体薄膜; 以及包含有机半导体薄膜的薄膜晶体管。

    Organic semiconductor material, organic semiconductor structure, and organic semiconductor device
    8.
    发明申请
    Organic semiconductor material, organic semiconductor structure, and organic semiconductor device 失效
    有机半导体材料，有机半导体结构和有机半导体器件

    公开(公告)号：US20060076554A1

    公开(公告)日：2006-04-13

    申请号：US11092238

    申请日：2005-03-29

    申请人： Hiroki Maeda ,  Ken Tomino ,  Shigeru Sugawara ,  Masahiro Funahashi ,  Junichi Hanna

    发明人： Hiroki Maeda ,  Ken Tomino ,  Shigeru Sugawara ,  Masahiro Funahashi ,  Junichi Hanna

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0068 ,  H01L51/0036 ,  H01L51/0076 ,  H01L51/0545 ,  Y02E10/549 ,  Y10T428/31504

    摘要： The object is to provide an organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material comprising a quaterthiophene skeleton shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.

    摘要翻译： 本发明的目的是提供一种有机半导体材料，其能够在至少包含常温的宽温度范围内显示出液晶相，并表现出高的载流子迁移率，以及由有机半导体材料形成的有机半导体结构和有机半导体器件。 为了达到上述目的，本发明提供一种有机半导体材料，其含有下述化学式1所示的四噻吩骨架，其中化学式1中的R1为C1〜C20的烷基或氢，R2为烷基 的C1至C20或氢。

    Smectic liquid crystal compound
    9.
    发明授权
    Smectic liquid crystal compound 失效
    近晶液晶化合物

    公开(公告)号：US07915609B2

    公开(公告)日：2011-03-29

    申请号：US12303751

    申请日：2007-06-05

    申请人： Masahiro Funahashi ,  Fuxapei Chan ,  Nobuyuki Tamaoki

    发明人： Masahiro Funahashi ,  Fuxapei Chan ,  Nobuyuki Tamaoki

    IPC分类号： H01L35/24

    CPC分类号： H01L51/0076 ,  C09K19/3491 ,  H01L51/0068 ,  H01L51/5048

    摘要： According to the present invention, a liquid crystal semiconductor capable of exhibiting a highly ordered smectic phase at approximately room temperature, being used for formation of a smectic liquid crystal thin film that is stable at room temperature by a solution process, and showing excellent ambipolar charge-transporting properties, a thin film transistor comprising the same, and the like are provided.Also, the following are provided: a smectic liquid crystal compound represented by the following general formula (1) wherein R1 represents a straight-chain alkyl group having 1 to 8 carbon atoms, R2 represents an alkyl or alkoxy group having 1 to 8 carbon atoms, and “n” is an integer of 0 to 3; an ambipolar charge-transporting material comprising the smectic liquid crystal compound; an organic semiconductor thin film having a thin film layer comprising the smectic liquid crystal compound; and a thin film transistor comprising the organic semiconductor thin film.

    摘要翻译： 根据本发明，能够在大约室温下表现出高度顺序的近晶相的液晶半导体用于通过溶液法在室温下稳定的近晶液晶薄膜的形成，并且显示优异的双极电荷 - 输送性质，包含该薄膜晶体管的薄膜晶体管等。 另外，提供以下通式（1）表示的近晶型液晶化合物，其中R1表示碳原子数1〜8的直链烷基，R2表示碳原子数1〜8的烷基或烷氧基 ，“n”为0〜3的整数。 包含近晶液晶化合物的双极电荷输送材料; 具有由层状液晶性化合物构成的薄膜层的有机半导体薄膜; 以及包含有机半导体薄膜的薄膜晶体管。