公开(公告)号：US11119012B2

公开(公告)日：2021-09-14

申请号：US15962426

申请日：2018-04-25

申请人： Dimitry Boguslavsky ,  Mark Kovler

发明人： Dimitry Boguslavsky ,  Mark Kovler

IPC分类号： G01N1/28 ,  B26F3/00 ,  B28D5/00 ,  G01N1/42

摘要： An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.

公开(公告)号：US10213940B2

公开(公告)日：2019-02-26

申请号：US14871668

申请日：2015-09-30

申请人： Dimitry Boguslavsky ,  Mark Kovler

发明人： Dimitry Boguslavsky ,  Mark Kovler

IPC分类号： B28D5/00 ,  H01L21/67 ,  H01L21/78

摘要： A device for cleaving a crystalline sample, the device comprises: upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment on the crystalline sample; a first surface impact element that contacts a first surface of the crystalline sample; a cleaving element that is arranged to impact a second surface of the crystalline sample while the bending moment is applied on the crystalline element; wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface.

公开(公告)号：US20180306685A1

公开(公告)日：2018-10-25

申请号：US15962426

申请日：2018-04-25

申请人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

发明人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

IPC分类号： G01N1/28 ,  B28D5/00 ,  B26F3/00

CPC分类号： G01N1/286 ,  B26F3/002 ,  B28D5/0011 ,  G01N1/2806 ,  G01N2001/2873

摘要： An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.

公开(公告)号：US20180174798A1

公开(公告)日：2018-06-21

申请号：US15897954

申请日：2018-02-15

申请人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

发明人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

IPC分类号： H01J37/305 ,  G01N1/32 ,  H01J37/147 ,  H01J37/20

CPC分类号： H01J37/3056 ,  G01N1/286 ,  G01N1/32 ,  G01N2001/2873 ,  H01J37/147 ,  H01J37/20 ,  H01J2237/0827 ,  H01J2237/1505 ,  H01J2237/31745 ,  H01J2237/31749

摘要： Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

公开(公告)号：US09911573B2

公开(公告)日：2018-03-06

申请号：US14642138

申请日：2015-03-09

申请人： Dimitry Boguslavsky ,  Mark Kovler

发明人： Dimitry Boguslavsky ,  Mark Kovler

IPC分类号： C23C16/50 ,  H01J37/305 ,  G01N1/32 ,  H01J37/147 ,  H01J37/20

CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J37/147 ,  H01J37/20 ,  H01J2237/0245 ,  H01J2237/0827 ,  H01J2237/1505 ,  H01J2237/31745 ,  H01J2237/31749

摘要： Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

公开(公告)号：US20160089813A1

公开(公告)日：2016-03-31

申请号：US14871668

申请日：2015-09-30

申请人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

发明人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

IPC分类号： B28D5/00 ,  H01L21/78 ,  H01L21/67

CPC分类号： B28D5/0017 ,  B28D5/0052 ,  H01L21/67092 ,  H01L21/78

摘要： A device for cleaving a crystalline sample, the device comprises: upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment on the crystalline sample; a first surface impact element that contacts a first surface of the crystalline sample; a cleaving element that is arranged to impact a second surface of the crystalline sample while the bending moment is applied on the crystalline element; wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface.

摘要翻译： 一种用于切割结晶样品的装置，该装置包括：上和下弯曲元件，其布置成接触结晶样品的上表面和下表面，并在结晶样品上施加弯矩; 与所述结晶样品的第一表面接触的第一表面冲击元件; 该切割元件被布置成在弯曲力矩施加到结晶元件上时冲击晶体样品的第二表面; 其中所述第二表面与所述第一侧相对并且定向到所述结晶样品的上表面和下表面，其中所述装置排除任何第二表面对准元件，以通过接触所述第二表面来对准所述结晶样品。

公开(公告)号：US20150255248A1

公开(公告)日：2015-09-10

申请号：US14642138

申请日：2015-03-09

申请人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

发明人： Dimitry BOGUSLAVSKY ,  Mark KOVLER

IPC分类号： H01J37/305 ,  G01N1/32

CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J37/147 ,  H01J37/20 ,  H01J2237/0245 ,  H01J2237/0827 ,  H01J2237/1505 ,  H01J2237/31745 ,  H01J2237/31749

摘要： Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0°. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

摘要翻译： 公开了用于离子束铣削或加工的方法，装置，系统和软件。 该装置包括样本保持器，台，一个或多个离子源，可旋转的离子光学器件和成像装置。 样品架被配置成在铣削或加工过程中将样品保持在静止位置。 该台被配置为在三个正交的线性方向和角度方向中的任一个中改变样本保持器的静止位置。 可旋转离子光学器件被配置为当表的角度方向与表的水平表面垂直的轴线以任何角度从任何一个或多个离子源发射离子束到样品上的预定位置 是0°。 成像装置被配置为生成包括预定位置的样本的图像，从而能够实时地监视铣削或加工过程。

公开(公告)号：US20080110759A1

公开(公告)日：2008-05-15

申请号：US11559480

申请日：2006-11-14

申请人： David Sarosvetsky ,  Nina Sezin ,  Yair Ein-Eli ,  Mark Kovler

发明人： David Sarosvetsky ,  Nina Sezin ,  Yair Ein-Eli ,  Mark Kovler

IPC分类号： C25D5/16

CPC分类号： C25D5/02 ,  C25D5/18 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877

摘要： A method of performing electrochemical deposition is provided to minimize overburden. A constant plating voltage (and a variable plating current) is applied across a semiconductor structure (e.g., patterned dielectric layer) and a metal electrode, which are both submerged in an electrolyte that contains both suppressor and accelerator molecules. The constant plating voltage is selected such that the suppressor molecules are predominantly active on the flat upper surface of the patterned dielectric layer, and the accelerator molecules are predominantly active within the patterned features of the patterned dielectric layer. As a result, metal is deposited at a relatively high rate within the patterned features, and at a relatively low rate on the flat upper surface areas of the patterned dielectric layer. Consequently, the patterned features are filled with metal before significant overburden can be formed over the flat upper surface areas of the patterned dielectric layer.

摘要翻译： 提供进行电化学沉积的方法以最小化上覆层。 施加恒定的电镀电压（和可变电镀电流）跨越半导体结构（例如，图案化电介质层）和金属电极，两者均浸没在包含抑制剂和促进剂分子的电解质中。 选择恒定电镀电压使得抑制分子主要在图案化电介质层的平坦上表面上起作用，并且促进剂分子主要在图案化电介质层的图案化特征内是有活性的。 结果，在图案化的特征中以相对高的速率沉积金属，并且在图案化的介电层的平坦的上表面区域以相对低的速率沉积金属。 因此，在图案化的介电层的平坦的上表面区域上可以形成显着的覆盖层之前，图案化的特征被金属填充。

公开(公告)号：US06521118B1

公开(公告)日：2003-02-18

申请号：US09600376

申请日：2000-11-22

申请人： David Starosvetsky ,  Mark Kovler ,  Joseph Yahalom ,  Yael Nemirovsky

发明人： David Starosvetsky ,  Mark Kovler ,  Joseph Yahalom ,  Yael Nemirovsky

IPC分类号： C25F300

CPC分类号： H01L21/3063 ,  C25F3/12 ,  C25F7/00 ,  H01L21/30635

摘要： There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.

摘要翻译： 提供了一种用于蚀刻半导体材料的方法，包括以下步骤：提供含有蚀刻电解质的电化学电池，所述蚀刻电解质选自酸性电解质溶液，碱性溶液，中性溶液和熔融电解质; 将半导体材料浸渍在蚀刻电解质中，由此半导体材料的至少一个表面与蚀刻电解质接触; 然后对半导体材料施加负偏压; 并且在继续对半导体材料进行负偏压的同时，用从紫外线，可见光和红外光组中选择的光照射与蚀刻电解质接触的半导体材料的至少一个表面的至少一部分。 还提供了用于实现本发明方法的设备以及如此蚀刻的半导体材料。