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公开(公告)号：US20160059444A1
公开(公告)日：2016-03-03
申请号：US14121387
申请日：2014-08-29
申请人： Yanbo Wang , Bor Z. Jang , David Burton , Lucy Fu , Aruna Zhamu
发明人： Yanbo Wang , Bor Z. Jang , David Burton , Lucy Fu , Aruna Zhamu
CPC分类号： C01B31/04 , C01B32/20 , C01P2006/10 , C01P2006/32 , C01P2006/40
摘要： A one-step (direct graphitization) process for producing a graphitic film, comprising directly feeding a precursor polymer film, without going through a carbonization step, to a graphitization zone preset at a graphitization temperature no less than 2,200° C. for a period of residence time sufficient for converting the precursor polymer film to a porous graphitic film having a density from 0.1 g/cm3 to 1.5 g/cm3 and retreating the porous graphitic film from the graphitization zone. Preferably, the precursor polymer film is selected from the group consisting of polyimide, polyamide, phenolic resin, polyoxadiazole, polybenzoxazole, polybenzobisoxazole, polythiazole, polybenzothiazole, polybenzobisthiazole, poly(p-phenylene vinylene), polybenzimidazole, polybenzobisimidazole, polyacrylonitrile, and combinations thereof. Preferably, the precursor polymer film contains an amount of graphene sheets or expanded graphite flakes, preferably from 1% to 90% by weight, sufficient for promoting or accelerating graphitization.
摘要翻译： 用于生产石墨膜的一步（直接石墨化）方法，包括直接将前体聚合物膜直接进料到不经过碳化步骤的石墨化区域，石墨化区域以石墨化温度不低于2200℃预设一段时间 将前体聚合物膜转化为密度为0.1g / cm 3至1.5g / cm 3的多孔石墨膜，并从石墨化区域中回收多孔石墨膜的足够的停留时间。 优选地，前体聚合物膜选自聚酰亚胺，聚酰胺，酚醛树脂，聚恶二唑，聚苯并恶唑，聚苯并双恶唑，聚噻唑，聚苯并噻唑，聚苯并二噻唑，聚（对亚苯基亚乙烯基），聚苯并咪唑，聚苯并双咪唑，聚丙烯腈及其组合。 优选地，前体聚合物膜含有足以促进或加速石墨化的量的石墨烯片或膨胀石墨片，优选为1重量％至90重量％。
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公开(公告)号：US20140242275A1
公开(公告)日：2014-08-28
申请号：US13815349
申请日：2013-02-25
申请人： Aruna Zhamu , Mingchao Wang , Lucy Fu , Bor Z. Jang
发明人： Aruna Zhamu , Mingchao Wang , Lucy Fu , Bor Z. Jang
IPC分类号： C01B31/04
CPC分类号： C01B31/0469 , C01B31/0423 , C01B32/19 , C01B32/225
摘要： A process for producing a unitary graphene material, comprising: (a) preparing a graphene oxide (GO) gel having GO molecules dissolved in a fluid medium wherein the GO molecules contain higher than 20% by weight of oxygen; (b) dispensing and depositing a layer of GO gel onto a surface of a substrate to form a layer of deposited GO gel thereon, wherein the dispensing and depositing procedure includes shear-induced thinning; (c) removing the fluid medium from the deposited GO gel to form a GO layer having an inter-plane spacing d002 of 0.4 nm to 1.2 nm as determined by X-ray diffraction; and (d) heat treating the GO layer to form the unitary graphene material at a heat treatment temperature higher than 100° C. to an extent that d002 is decreased to a value of 0.3354 nm to 0.4 nm and the oxygen content is decreased to less than 5% by weight.
摘要翻译： 一种制备单一石墨烯材料的方法，包括：（a）制备具有溶解在其中GO分子含有高于20重量％的氧的流体介质中的GO分子的氧化石墨烯（GO）凝胶; （b）将GO凝胶层分配并沉积到基底表面上以在其上形成沉积的GO凝胶层，其中分配和沉积步骤包括剪切诱导的稀化; （c）通过X射线衍射测定，从沉积的GO凝胶中除去流体介质以形成具有0.4nm至1.2nm的平面间距d002的GO层; 和（d）热处理GO层以在高于100℃的热处理温度下形成单一石墨烯材料，直到d002降低到0.3354nm至0.4nm的值，并且氧含量降低到更低 超过5重量％。
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公开(公告)号：US09580325B2
公开(公告)日：2017-02-28
申请号：US13999282
申请日：2014-02-06
申请人： Aruna Zhamu , Bor Z Jang , Yanbo Wang , Lucy Fu
发明人： Aruna Zhamu , Bor Z Jang , Yanbo Wang , Lucy Fu
CPC分类号： C01B32/19 , B29K2105/0061 , B29L2007/008 , B32B37/24 , B32B38/0036 , B82Y30/00 , B82Y40/00 , C01B31/043 , C01B32/184 , C01B32/192 , C01B32/194 , C01B2204/04 , C01B2204/22 , C01B2204/24 , C01B2204/26 , C09K5/14
摘要： A process for producing a highly oriented graphene film (HOGF), comprising: (a) preparing a graphene oxide (GO) dispersion having GO sheets dispersed in a fluid medium; (b) dispensing and depositing the dispersion onto a surface of a supporting substrate to form a layer of GO, wherein the dispensing and depositing procedure includes subjecting the dispersion to an orientation-inducing stress; (c) removing the fluid medium to form a dried layer of GO having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) slicing the dried layer of GO into multiple pieces of dried GO and stacking at least two pieces of dried GO to form a mass of multiple pieces of GO; and (f) heat treating the mass under an optional first compressive stress to produce the HOGF at a first heat treatment temperature higher than 100° C. to an extent that an inter-plane spacing d002 is decreased to a value less than 0.4 nm.
摘要翻译： 一种制备高取向石墨烯膜（HOGF）的方法，包括：（a）制备分散在流体介质中的GO片的氧化石墨烯（GO）分散体; （b）将分散体分配并沉积到支撑基底的表面上以形成一层GO，其中分配和沉积步骤包括使分散体经受定向诱导应力; （c）去除流体介质以形成具有0.4nm至1.2nm的平面间距d002的GO干燥层; （d）将干燥的GO层切成多个干燥的GO，并堆叠至少两片干燥的GO以形成多个GO块; 和（f）在任选的第一压缩应力下热处理所述物质，以在高于100℃的第一热处理温度下产生HOGF，使得平面间距d002减小到小于0.4nm的值。
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公开(公告)号：US09156700B2
公开(公告)日：2015-10-13
申请号：US13815349
申请日：2013-02-25
申请人： Aruna Zhamu , Mingchao Wang , Lucy Fu , Bor Z. Jang
发明人： Aruna Zhamu , Mingchao Wang , Lucy Fu , Bor Z. Jang
CPC分类号： C01B31/0469 , C01B31/0423 , C01B32/19 , C01B32/225
摘要： A process for producing a unitary graphene material, comprising: (a) preparing a graphene oxide (GO) gel having GO molecules dissolved in a fluid medium wherein the GO molecules contain higher than 20% by weight of oxygen; (b) dispensing and depositing a layer of GO gel onto a surface of a substrate to form a layer of deposited GO gel thereon, wherein the dispensing and depositing procedure includes shear-induced thinning; (c) removing the fluid medium from the deposited GO gel to form a GO layer having an inter-plane spacing d002 of 0.4 nm to 1.2 nm as determined by X-ray diffraction; and (d) heat treating the GO layer to form the unitary graphene material at a heat treatment temperature higher than 100° C. to an extent that d002 is decreased to a value of 0.3354 nm to 0.4 nm and the oxygen content is decreased to less than 5% by weight.
摘要翻译： 一种制备单一石墨烯材料的方法，包括：（a）制备具有溶解在其中GO分子含有高于20重量％的氧的流体介质中的GO分子的氧化石墨烯（GO）凝胶; （b）将GO凝胶层分配并沉积到基底表面上以在其上形成沉积的GO凝胶层，其中分配和沉积步骤包括剪切诱导的稀化; （c）通过X射线衍射测定，从沉积的GO凝胶中除去流体介质以形成具有0.4nm至1.2nm的平面间距d002的GO层; 和（d）热处理GO层以在高于100℃的热处理温度下形成单一石墨烯材料，直到d002降低到0.3354nm至0.4nm的值，并且氧含量降低到更低 超过5重量％。
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公开(公告)号：US20150217538A1
公开(公告)日：2015-08-06
申请号：US13999283
申请日：2014-02-06
申请人： Aruna Zhamu , Bor Z. Jang , Yanbo Wang , Lucy Fu
发明人： Aruna Zhamu , Bor Z. Jang , Yanbo Wang , Lucy Fu
CPC分类号： B32B9/04 , B32B5/00 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/23 , C01P2006/10 , C01P2006/32 , C01P2006/40 , C04B35/52 , C04B35/645 , C04B2235/5292 , C04B2235/604 , C04B2235/723 , C04B2235/787 , Y10T156/1075
摘要： A process for producing a bulk highly oriented graphene structure, comprising: (a) preparing a graphene oxide dispersion having graphene oxide (GO) sheets dispersed in a fluid medium; (b) dispensing and depositing the dispersion onto a surface of a supporting substrate to form a layer of GO, wherein the dispensing and depositing procedure includes subjecting the dispersion to an orientation-inducing stress; (c) removing the fluid medium to form a dried layer of GO having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) slicing the dried layer of GO into multiple pieces of dried GO and stacking at least two pieces of dried GO to form a mass of multiple pieces of GO; and (f) heat treating the mass under an optional first compressive stress to produce the highly oriented graphene structure at a first heat treatment temperature higher than 100° C. to an extent that an inter-plane spacing d002 is decreased to a value less than 0.4 nm.
摘要翻译： 一种用于制造块体高取向石墨烯结构的方法，包括：（a）制备分散在流体介质中的具有氧化石墨烯（GO）片的石墨烯氧化物分散体; （b）将分散体分配并沉积到支撑基底的表面上以形成一层GO，其中分配和沉积步骤包括使分散体经受定向诱导应力; （c）去除流体介质以形成具有0.4nm至1.2nm的平面间距d002的GO干燥层; （d）将干燥的GO层切成多个干燥的GO，并堆叠至少两片干燥的GO以形成多个GO块; 和（f）在任选的第一压缩应力下热处理所述材料，以在高于100℃的第一热处理温度下产生高度取向的石墨烯结构，使得平面间距d002减小到小于 0.4nm。
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公开(公告)号：US09193132B2
公开(公告)日：2015-11-24
申请号：US13999283
申请日：2014-02-06
申请人： Aruna Zhamu , Bor Z Jang , Yanbo Wang , Lucy Fu
发明人： Aruna Zhamu , Bor Z Jang , Yanbo Wang , Lucy Fu
CPC分类号： B32B9/04 , B32B5/00 , B82Y30/00 , B82Y40/00 , C01B32/182 , C01B32/23 , C01P2006/10 , C01P2006/32 , C01P2006/40 , C04B35/52 , C04B35/645 , C04B2235/5292 , C04B2235/604 , C04B2235/723 , C04B2235/787 , Y10T156/1075
摘要： A process for producing a bulk highly oriented graphene structure, comprising: (a) preparing a graphene oxide dispersion having graphene oxide (GO) sheets dispersed in a fluid medium; (b) dispensing and depositing the dispersion onto a surface of a supporting substrate to form a layer of GO, wherein the dispensing and depositing procedure includes subjecting the dispersion to an orientation-inducing stress; (c) removing the fluid medium to form a dried layer of GO having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) slicing the dried layer of GO into multiple pieces of dried GO and stacking at least two pieces of dried GO to form a mass of multiple pieces of GO; and (f) heat treating the mass under an optional first compressive stress to produce the highly oriented graphene structure at a first heat treatment temperature higher than 100° C. to an extent that an inter-plane spacing d002 is decreased to a value less than 0.4 nm.
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公开(公告)号：US20150218003A1
公开(公告)日：2015-08-06
申请号：US13999282
申请日：2014-02-06
申请人： Aruna Zhamu , Bor Z. Jang , Yanbo Wang , Lucy Fu
发明人： Aruna Zhamu , Bor Z. Jang , Yanbo Wang , Lucy Fu
CPC分类号： C01B32/19 , B29K2105/0061 , B29L2007/008 , B32B37/24 , B32B38/0036 , B82Y30/00 , B82Y40/00 , C01B31/043 , C01B32/184 , C01B32/192 , C01B32/194 , C01B2204/04 , C01B2204/22 , C01B2204/24 , C01B2204/26 , C09K5/14
摘要： A process for producing a highly oriented graphene film (HOGF), comprising: (a) preparing a graphene oxide (GO) dispersion having GO sheets dispersed in a fluid medium; (b) dispensing and depositing the dispersion onto a surface of a supporting substrate to form a layer of GO, wherein the dispensing and depositing procedure includes subjecting the dispersion to an orientation-inducing stress; (c) removing the fluid medium to form a dried layer of GO having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) slicing the dried layer of GO into multiple pieces of dried GO and stacking at least two pieces of dried GO to form a mass of multiple pieces of GO; and (f) heat treating the mass under an optional first compressive stress to produce the HOGF at a first heat treatment temperature higher than 100° C. to an extent that an inter-plane spacing d002 is decreased to a value less than 0.4 nm.
摘要翻译： 一种制备高取向石墨烯膜（HOGF）的方法，包括：（a）制备分散在流体介质中的GO片的氧化石墨烯（GO）分散体; （b）将分散体分配并沉积到支撑基底的表面上以形成一层GO，其中分配和沉积步骤包括使分散体经受定向诱导应力; （c）去除流体介质以形成具有0.4nm至1.2nm的平面间距d002的GO干燥层; （d）将干燥的GO层切成多个干燥的GO，并堆叠至少两片干燥的GO以形成多个GO块; 和（f）在任选的第一压缩应力下热处理所述物质，以在高于100℃的第一热处理温度下产生HOGF，使得平面间距d002减小到小于0.4nm的值。
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