公开(公告)号：US20110163439A1

公开(公告)日：2011-07-07

申请号：US12683961

申请日：2010-01-07

Applicant: Jin-Wook Jang ,  Lalgudi M. Mahalingam ,  Audel A. Sanchez ,  Lakshminarayan Viswanathan

Inventor： Jin-Wook Jang ,  Lalgudi M. Mahalingam ,  Audel A. Sanchez ,  Lakshminarayan Viswanathan

IPC: H01L23/34 ,  H01L21/50

CPC classification number: H01L23/373 ,  H01L23/057 ,  H01L23/3731 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0489 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method includes providing a silicon-containing die and providing a heat sink having a palladium layer over a first surface of the heat sink. A first gold layer is located over one of a first surface of the die or the palladium layer. The silicon-containing die is bonded to the heat sink, where bonding includes joining the silicon-containing die and the heat sink such that the first gold layer and the palladium layer are between the first surface of the silicon-containing die and the first surface of the heat sink, and heating the first gold layer and the palladium layer to form a die attach layer between the first surface of the silicon-containing die and the first surface of the heat sink, the die attach layer comprising a gold interface layer having a plurality of intermetallic precipitates, each of the plurality of intermetallic precipitates comprising palladium, gold, and silicon.

Abstract translation: 一种方法包括提供含硅模头并且在散热器的第一表面上提供具有钯层的散热器。 第一金层位于管芯的第一表面或钯层之一上。 所述含硅芯片与所述散热器接合，其中，所述接合包括将所述含硅芯片与所述散热器接合，使得所述第一金层和所述钯层位于所述含硅模具的所述第一表面和所述第一表面之间 并且加热所述第一金层和所述钯层以在所述含硅芯片的所述第一表面和所述散热器的所述第一表面之间形成管芯附着层，所述管芯附着层包括金界面层，所述金界面层具有 多个金属间化合物沉淀物，多个金属间析出物中的每一个包括钯，金和硅。

公开(公告)号：US08753983B2

公开(公告)日：2014-06-17

申请号：US12683961

申请日：2010-01-07

Applicant: Jin-Wook Jang ,  Lalgudi M. Mahalingam ,  Audel A. Sanchez ,  Lakshminarayan Viswanathan

Inventor： Jin-Wook Jang ,  Lalgudi M. Mahalingam ,  Audel A. Sanchez ,  Lakshminarayan Viswanathan

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L23/373 ,  H01L23/057 ,  H01L23/3731 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0489 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method includes providing a silicon-containing die and providing a heat sink having a palladium layer over a first surface of the heat sink. A first gold layer is located over one of a first surface of the die or the palladium layer. The silicon-containing die is bonded to the heat sink, where bonding includes joining the silicon-containing die and the heat sink such that the first gold layer and the palladium layer are between the first surface of the silicon-containing die and the first surface of the heat sink, and heating the first gold layer and the palladium layer to form a die attach layer between the first surface of the silicon-containing die and the first surface of the heat sink, the die attach layer comprising a gold interface layer having a plurality of intermetallic precipitates, each of the plurality of intermetallic precipitates comprising palladium, gold, and silicon.

Abstract translation: 一种方法包括提供含硅模头并且在散热器的第一表面上提供具有钯层的散热器。 第一金层位于管芯的第一表面或钯层之一上。 所述含硅芯片与所述散热器接合，其中，所述接合包括将所述含硅芯片与所述散热器接合，使得所述第一金层和所述钯层位于所述含硅模具的所述第一表面和所述第一表面之间 并且加热所述第一金层和所述钯层以在所述含硅芯片的所述第一表面和所述散热器的所述第一表面之间形成管芯附着层，所述管芯附着层包括金界面层，所述金界面层具有 多个金属间化合物沉淀物，多个金属间析出物中的每一个包括钯，金和硅。