摘要:
A pattern inspection apparatus includes a first unit configured to acquire an optical image of a target workpiece to be inspected, a second unit configured to generate a reference image to be compared, a third unit configured, by using a mathematical model in which a parallel shift amount, an expansion and contraction error coefficient, a rotation error coefficient, a gray-level offset and an image transmission loss ratio are parameters, to calculate each of the parameters by a least-squares method, a forth unit configured to generate a corrected image by shifting a position of the reference image by a displacement amount, based on the each of the parameters, and a fifth unit configured to compare the corrected image with the optical image.
摘要:
A pattern inspecting method, comprising preparing a sample having a first and a second inspection regions and an imaging device having a plurality of pixels, scanning the first inspection region to a first direction using the imaging device to obtain a first measurement pattern representing at least parts of the first inspection region, scanning the second inspection region to the first direction using the imaging device to obtain a second measurement pattern representing at least parts of the second inspection region, comparing the first measurement pattern and the second measurement pattern with each other to determine presence or absence of a defect formed on the sample, and controlling a scanning condition for scanning a pattern of the second inspection region by the imaging device so as to keep the same with the scanning condition when the pattern of the first inspection region is scanned by the imaging device.
摘要:
An integrated circuit includes: a first well of a first conductivity type; a second well of a second conductivity type coming into contact with the first well at a well boundary extending in a gate length direction; a first transistor having a first active region of the second conductivity type provided in the first well; and a second transistor which has a second active region of the second conductivity type provided in the first well and differing from the first active region in length in a gate width direction. The center location of the first active region in the gate width direction is aligned with the center location of the second active region in the gate width direction with reference to the well boundary.
摘要:
A semiconductor device includes a semiconductor substrate; a diffusion region which is formed in the semiconductor substrate and serves as a region for the formation of a MIS transistor; an element isolation region surrounding the diffusion region; at least one gate conductor film which is formed across the diffusion region and the element isolation region, includes a gate electrode part located on the diffusion region and a gate interconnect part located on the element isolation region, and has a constant dimension in the gate length direction; and an interlayer insulating film covering the gate electrode. The semiconductor device further includes a gate contact which passes through the interlayer insulating film, is connected to the gate interconnect part, and has the dimension in the gate length direction larger than the gate interconnect part.
摘要:
A target workpiece inspection apparatus comprises an optical image acquiring unit to acquire an optical image of a target workpiece, a reference image generating unit to generate a reference image to be compared, a difference judging unit to judge whether an absolute value of difference between pixel values of the images in each pixel at a preliminary alignment position between the images is smaller than a threshold value, a least-squares method displacement calculating unit to calculate a displacement amount displaced from the preliminary alignment position, by using a regular matrix for a least-squares method obtained from a result judged, a position correcting unit to correct an alignment position between the optical image and the reference image to a position displaced from the preliminary alignment position by the displacement amount, and a comparing unit to compare the optical image and the reference image whose alignment position has been corrected.
摘要:
A data searching unit 12 of a data searching apparatus 10 obtains according to a searching request including a search condition specified by a data searching application 16, metadata which satisfy the search condition from a data storage unit 11, and instructs an external communication unit 15 to request searching of data to a data providing apparatus 20 with the same search condition.
摘要:
In designing a semiconductor integrated circuit, circuit information used for circuit simulation is extracted from measurement values of electric characteristics of a device included in TEG and parameters included in a netlist are modified using the measurement values and simulation values. Circuit simulation is carried out using the thus modified netlist to lead to a decrease in error in the circuit simulation which is caused due to difference between design dimension and actual finished dimension, thereby preventing an increase in design margin and a yield lowering by malfunction.
摘要:
PMISFETs and NMISFETs are placed in a capacitance measuring circuit. Each of interconnects is connected via the corresponding PMISFET through a charging voltage supply part to a power supply pad and via the corresponding NMISFET through a current sampling part to a current-monitoring pad. A current I can be measured by bringing a probe of an ammeter into contact with the current-monitoring pad.
摘要:
A CBCM measurement device includes a PMIS transistor, an NMIS transistor, a first reference conductor section connected to a first node, a second reference conductor section, with a dummy capacitor being formed between the first and second reference conductor sections, a first test conductor section connected to a second node, and a second test conductor section, with a test capacitor being formed between the first and second test conductor sections. The transistors are turned ON/OFF by using control voltages V1 and V2, and the capacitance of a target capacitor in the test capacitor is measured based on currents flowing through the first and second nodes. The capacitance measurement precision is improved by, for example, increasing a dummy capacitance.
摘要:
A pattern inspection apparatus comprises a sensor data input section for inputting a two-dimensional inspected pattern as image data (sensor data) having a multivalued (non-binary) density distribution, design data input section for inputting reference pattern data (reference data) corresponding to the inspected pattern, a compare section for making a comparison between the image data and the reference data to obtain the difference in density therebeween, a minimum compare section for performing spatial differentiation filtering on the distribution of density between the inspected pattern and the reference pattern in different directions and obtaining the minimum of the absolute values of the filtered outputs, and a first defect determining section for detecting a defect on the basis of the minimum obtained by the compare section. In place of the first defect determining section, a maximum/minimum compare section for obtaining the minimum and maximum of the absolute values of the filtered outputs and a second defect determining section for detecting a defect on the basis of the density difference, the minimum and the maximum may be provided.