Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
    2.
    发明授权
    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same 有权
    光敏树脂组合物,薄膜晶体管基板的制造方法以及使用该薄膜晶体管基板的公共电极基板的制造方法

    公开(公告)号:US07799509B2

    公开(公告)日:2010-09-21

    申请号:US11445846

    申请日:2006-06-02

    IPC分类号: G03F7/30 G03F7/023

    摘要: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

    摘要翻译: 用于有机层图案的感光性树脂组合物包括约100重量份的丙烯酸类共聚物和约5至约100重量份的1,2-醌二叠氮化合物。 基于丙烯酸类的共聚物通过基于丙烯酸类共聚物的总重量共聚约5至约60重量%的基于羧酸异冰片的化合物来制备,约10至约30重量%的不饱和化合物携带 约20至约40重量%的烯烃基不饱和化合物,和约10至约40重量%的选自不饱和羧酸,不饱和羧酸酐及其混合物的一种。 还提供了使用该感光性树脂组合物制造TFT基板和公共电极基板的方法。 有利地,有机层图案可以具有具有改进的局部平坦度而没有凹凸结构的山体结构。

    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
    3.
    发明授权
    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same 有权
    光刻胶组合物及使用其制造薄膜晶体管基板的方法

    公开(公告)号:US07638253B2

    公开(公告)日:2009-12-29

    申请号:US12082436

    申请日:2008-04-11

    IPC分类号: G03F7/004 G03F7/023 G03F7/30

    摘要: In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

    摘要翻译: 在一个实例中,光致抗蚀剂组合物包括约1至约70重量份的第一粘合剂树脂,其包含由以下化学式1表示的重复单元,约1至约70重量份的第二粘合剂树脂,其包含重复单元 由以下化学式2表示,约0.5至约10重量份的光酸产生剂,约1至约20重量份的交联剂和约10至约200重量份的溶剂。 光致抗蚀剂组合物可以提高光致抗蚀剂图案的耐热性和粘附能力。 其中R1和R2独立地表示具有1至5个碳原子的烷基,n和m独立地表示自然数。

    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
    4.
    发明申请
    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same 有权
    光刻胶组合物及使用其制造薄膜晶体管基板的方法

    公开(公告)号:US20080254634A1

    公开(公告)日:2008-10-16

    申请号:US12082436

    申请日:2008-04-11

    IPC分类号: H01L21/311 G03F7/004

    摘要: In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

    摘要翻译: 在一个实例中,光致抗蚀剂组合物包括约1至约70重量份的第一粘合剂树脂,其包含由以下化学式1表示的重复单元,约1至约70重量份的第二粘合剂树脂,其包含重复单元 由以下化学式2表示,约0.5至约10重量份的光酸产生剂,约1至约20重量份的交联剂和约10至约200重量份的溶剂。 光致抗蚀剂组合物可以提高光致抗蚀剂图案的耐热性和粘附能力。 其中R 1和R 2独立地表示具有1至5个碳原子的烷基,n和m独立地表示自然数。

    METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND NEGATIVE PHOTORESIST COMPOSITION USED THEREIN
    6.
    发明申请
    METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND NEGATIVE PHOTORESIST COMPOSITION USED THEREIN 有权
    制造薄膜晶体管基板的方法及其使用的负极光电组合物

    公开(公告)号:US20100203449A1

    公开(公告)日:2010-08-12

    申请号:US12685545

    申请日:2010-01-11

    IPC分类号: G03F7/20 G03F7/004

    摘要: A method of fabricating a thin film transistor substrate and a negative photoresist composition used therein are provided, which can reduce pattern inferiority. The method of fabricating a thin film transistor substrate includes forming a conductive film composed of a conductive material on a substrate, forming an etch pattern composed of a negative photoresist composition on the conductive film, and forming a conductive pattern by etching the conductive film using the etch pattern as an etching mask, wherein the negative photoresist composition includes 10-50 parts by weight of novolak resin including a hydroxyl group that is soluble in an alkali developing solution, 0.5-10 parts by weight of a first photo acid generator represented by the following formula (1), 0.5-10 parts by weight of a second photo acid generator represented by the following formula (2), 1-20 parts by weight of a cross-linking agent, and 10-90 parts by weight of a solvent:

    摘要翻译: 提供了制造其中使用的薄膜晶体管基板和负型光致抗蚀剂组合物的方法,其可以降低图案劣化。 制造薄膜晶体管基板的方法包括在基板上形成由导电材料构成的导电膜,在导电膜上形成由负性光致抗蚀剂组合物构成的蚀刻图案,并使用该导电膜蚀刻导电膜形成导电图案 蚀刻图案作为蚀刻掩模,其中负性光致抗蚀剂组合物包含10-50重量份的包含可溶于碱显影液的羟基的酚醛清漆树脂,0.5-10重量份由 按照下式(1),将0.5-10重量份由下式(2)表示的第二光酸反应产物,1-20重量份的交联剂和10-90重量份的溶剂 :

    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
    10.
    发明申请
    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same 有权
    光敏树脂组合物,薄膜晶体管基板的制造方法以及使用该薄膜晶体管基板的公共电极基板的制造方法

    公开(公告)号:US20060275700A1

    公开(公告)日:2006-12-07

    申请号:US11445846

    申请日:2006-06-02

    IPC分类号: G03C1/00

    摘要: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

    摘要翻译: 用于有机层图案的感光性树脂组合物包括约100重量份的丙烯酸类共聚物和约5至约100重量份的1,2-醌二叠氮化合物。 基于丙烯酸类的共聚物通过基于丙烯酸类共聚物的总重量共聚约5至约60重量%的基于羧酸异冰片的化合物来制备,约10至约30重量%的不饱和化合物携带 约20至约40重量%的烯烃基不饱和化合物,和约10至约40重量%的选自不饱和羧酸,不饱和羧酸酐及其混合物的一种。 还提供了使用该感光性树脂组合物制造TFT基板和公共电极基板的方法。 有利地,有机层图案可以具有具有改进的局部平坦度而没有凹凸结构的山体结构。