Invention Grant
US07799509B2 Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
有权
光敏树脂组合物,薄膜晶体管基板的制造方法以及使用该薄膜晶体管基板的公共电极基板的制造方法
- Patent Title: Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
- Patent Title (中): 光敏树脂组合物,薄膜晶体管基板的制造方法以及使用该薄膜晶体管基板的公共电极基板的制造方法
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Application No.: US11445846Application Date: 2006-06-02
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Publication No.: US07799509B2Publication Date: 2010-09-21
- Inventor: Hi-Kuk Lee , Dong-Ki Lee , Jae-Sung Kim , Byung-Uk Kim , Hyoc-Min Youn , Ki-Hyuk Koo , Joo-Pyo Yun , Sang-Gak Choi
- Applicant: Hi-Kuk Lee , Dong-Ki Lee , Jae-Sung Kim , Byung-Uk Kim , Hyoc-Min Youn , Ki-Hyuk Koo , Joo-Pyo Yun , Sang-Gak Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2005-0048085 20050604; KR10-2006-0036586 20060424
- Main IPC: G03F7/30
- IPC: G03F7/30 ; G03F7/023

Abstract:
A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.
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