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    Laser material processing system
    1.
    发明授权
    Laser material processing system 有权
    激光材料加工系统

    公开(公告)号：US08563893B2

    公开(公告)日：2013-10-22

    申请号：US12096940

    申请日：2006-12-12

    申请人： Koji Kuno ,  Kenichi Muramatsu ,  Kazuhiro Atsumi ,  Tetsuya Osajima

    发明人： Koji Kuno ,  Kenichi Muramatsu ,  Kazuhiro Atsumi ,  Tetsuya Osajima

    IPC分类号： H01L21/78 ,  H01S3/13 ,  B23K26/00 ,  B23K26/06

    CPC分类号： B23K26/048 ,  B23K26/046 ,  B23K26/0617 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

    摘要： A laser processing apparatus comprises a converging lens 31 for converging processing laser light and rangefinding laser light L2 toward a wafer 1, an actuator for actuating the lens 31, a shaping optical system 49 for adding astigmatism to reflected light L3 of the rangefinding laser light, a quadrant photodiode 42 for receiving the reflected light L3 and outputting voltage values corresponding to its light quantities, and a controller for regulating the actuator, and positions a converging point P2 of the rangefinding laser light L2 between a focal point P0 of the lens and the lens 31, so as to make it possible to form a modified region at a position deeper from the front face 3, thereby suppressing adverse effects due to the reflected light L3. The control is based on an arithmetic value subjected to a division by a sum of the voltage values, so as to prevent the arithmetic value from being changed by the quantity of reflected light.

    摘要翻译： 激光加工装置包括用于会聚处理激光的聚光透镜31和朝向晶片1的测距激光L2，用于致动透镜31的致动器，用于对测距激光的反射光L3增加散光的整形光学系统49， 用于接收反射光L3并输出与其光量相对应的电压值的象限光电二极管42，以及用于调节致动器的控制器，并将测距激光L2的会聚点P2定位在透镜的焦点P0和 透镜31，从而能够在比正面3更深的位置形成改质区域，由此抑制由反射光L3引起的不利影响。 控制基于经过除以电压值之和的算术值，以防止算术值被反射光量改变。

    ILLUMINATION OPTICAL SYSTEM, EXPOSURE APPARATUS, AND EXPOSURE METHOD
    2.
    发明申请
    ILLUMINATION OPTICAL SYSTEM, EXPOSURE APPARATUS, AND EXPOSURE METHOD 审中-公开
    照明光学系统，曝光装置和曝光方法

    公开(公告)号：US20120236285A1

    公开(公告)日：2012-09-20

    申请号：US13482491

    申请日：2012-05-29

    申请人： Osamu TANITSU ,  Hirohisa TANAKA ,  Kenichi MURAMATSU ,  Norio KOMINE ,  Hisashi NISHINAGA ,  Tomoyuki MATSUYAMA ,  Takehito KUDO

    发明人： Osamu TANITSU ,  Hirohisa TANAKA ,  Kenichi MURAMATSU ,  Norio KOMINE ,  Hisashi NISHINAGA ,  Tomoyuki MATSUYAMA ,  Takehito KUDO

    IPC分类号： G03F7/20 ,  G03B27/72 ,  F21V9/14

    CPC分类号： G03F7/70566 ,  G03B27/42 ,  G03F7/70091

    摘要： An illumination optical system illuminates an irradiated surface with light supplied from a light source. The illumination optical system includes a diffractive optical element disposed in an optical path of linearly polarized light supplied from the light source. The diffractive optical element forms a multipole illumination field. including a plurality of illumination fields. The illumination optical system also includes an optical integrator that forms a multipole light source including a plurality of planar light sources with light that has passed through the multipole illumination field. The illumination optical system also includes a polarization optical member disposed in an illumination optical path and that sets a polarization direction of light that has passed through the multipole light source to a predetermined polarization direction.

    摘要翻译： 照明光学系统用从光源提供的光照射被照射的表面。 照明光学系统包括设置在从光源提供的线偏振光的光路中的衍射光学元件。 衍射光学元件形成多极照明场。 包括多个照明场。 照明光学系统还包括光学积分器，其形成包括已经穿过多极照明场的光的多个平面光源的多极光源。 照明光学系统还包括设置在照明光路中并将已经通过多极光源的光的偏振方向设定为预定偏振方向的偏振光学构件。

    LASER PROCESSING METHOD
    3.
    发明申请
    LASER PROCESSING METHOD 有权
    激光加工方法

    公开(公告)号：US20120067857A1

    公开(公告)日：2012-03-22

    申请号：US13308814

    申请日：2011-12-01

    申请人： Takeshi SAKAMOTO ,  Kenichi MURAMATSU

    发明人： Takeshi SAKAMOTO ,  Kenichi MURAMATSU

    IPC分类号： B23K26/38

    CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 μm to 525 μm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.

    摘要翻译： 提供了一种用于防止由切割硅晶片获得的切屑切割部分发生颗粒的激光加工方法。 使形成改质区域77〜712的激光L的照射条件与用于形成改质区域713〜719的激光L的照射条件不同，例如将激光L的球面像差校正为 硅晶片11的正面3为335μm〜525μm。 因此，即使将硅晶片11和功能元件层16从作为切割起点的改质区域71〜719切割成半导体芯片，在深度为335μm〜525μm的区域中也不会显着出现扭曲 ，由此难以发生颗粒。

    LASER BEAM MACHINING METHOD AND SEMICONDUCTOR CHIP
    5.
    发明申请
    LASER BEAM MACHINING METHOD AND SEMICONDUCTOR CHIP 有权
    激光束加工方法和半导体芯片

    公开(公告)号：US20090302428A1

    公开(公告)日：2009-12-10

    申请号：US12159338

    申请日：2006-12-26

    申请人： Takeshi Sakamoto ,  Kenichi Muramatsu

    发明人： Takeshi Sakamoto ,  Kenichi Muramatsu

    IPC分类号： H01L23/544 ,  H01L21/302

    CPC分类号： H01L23/544 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  C03B33/0222 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.

    摘要翻译： 在基板4上形成有会聚点P的基板4和形成在基板4的正面3上的多个功能元件15的被处理体1照射激光L，至少形成 一排分割改质区域72，位于分割改质区域72与基材4前表面3之间的至少一排质量改质区域71，以及至少一行位于 分割改质区域72和基板4的背面21一行切割5.这里，沿着切割线的方向，使分割改质区域72的形成密度低于质量改质区域的形成密度 71和改造后HC区域73。

    METHOD FOR CUTTING WORKPIECE
    7.
    发明申请
    METHOD FOR CUTTING WORKPIECE 有权
    切割工件的方法

    公开(公告)号：US20090107967A1

    公开(公告)日：2009-04-30

    申请号：US11994581

    申请日：2006-07-03

    申请人： Takeshi Sakamoto ,  Kenichi Muramatsu

    发明人： Takeshi Sakamoto ,  Kenichi Muramatsu

    IPC分类号： B23K31/10

    CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

    摘要： A method of cutting an object to be processed is provided, which can accurately cut an object to be processed comprising a substrate and a multilayer part provided on the front face of the substrate while having a plurality of functional devices into the functional devices along a line to cut in a short time even when the substrate is thick. A substrate 4 is irradiated with laser light L from the multilayer part 16 side while locating a converging point P within the substrate 4, so as to form a first modified region 71 shifted from the center position CL in the thickness direction of the substrate 4 to the rear face 21 side of the substrate 4 and a second modified region 72 shifted from the center position CL in the thickness direction of the substrate 4 to the front face 3 side of the substrate 4 within the substrate 4 along a line to cut, and generate a fracture 24 from the second modified region 72 to the front face 3 of the substrate 4. Thereafter, while in a state where an expandable tape 23 attached to the rear face 21 of the substrate 4 is expanded, a stress is generated in an object to be processed 1 such as to open the fracture 24.

    摘要翻译： 提供了一种切割待处理物体的方法，其可以精确地切割被加工物，其包括基板和设置在基板的正面上的多层部件，同时沿着线路具有多个功能元件进入功能元件 即使在基材较厚时也能在短时间内切割。 基板4从多层部16侧照射激光L，同时将会聚点P定位在基板4内，以形成从基板4的厚度方向的中心位置CL移位的第一改质区域71到 基板4的背面21侧和第二改质区域72沿着切断线在基板4的基板4的基板4的基板4的前面3侧沿基板4的厚度方向从中心位置CL移位， 产生从第二改质区域72到基板4的正面3的断裂线24.此后，在将基板4的背面21上附着的可扩张带23膨胀的状态下，产生应力 待处理物体1如打开骨折24。