摘要:
An organic light-emitting element comprises a large number of unit pixels each at least composed of a base, an auxiliary electrode, a first insulating layer to cover at least the auxiliary electrode, a charge injection layer on the first insulating electrode, laminated bodies each consisting of a first electrode and a second insulating layer and provided in a predetermined pattern, an organic light-emitting layer formed in regions where the laminated bodies are not provided, and a second electrode to cover at least the organic light-emitting layer. The unit pixel has first partitions provided to demarcate the organic light-emitting layer from other adjacent unit pixels and at least one or more second partitions to have a uniform coated thickness, and at least one of the first partition and the second partition is the laminated body.
摘要:
The invention is an organic luminescence transistor device including: a substrate; a first electrode layer provided on a side of an upper surface of the substrate; a layered structure provided locally on a side of an upper surface of the first electrode layer, the layered structure covering an area of a predetermined size in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order; an organic EL layer provided on the side of an upper surface of the first electrode layer at least at an area not provided with the layered structure; and a second electrode layer provided on a side of an upper surface of the organic EL layer.
摘要:
In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant.
摘要:
The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer.
摘要:
A transparent organic EL element comprising: a transparent substrate, a first transparent electrode layer formed on the transparent substrate in stripe form, an insulating partition wall formed in stripe form in a direction orthogonal to the longitudinal direction of the first transparent electrode layer on the transparent substrate with the first transparent electrode layer formed, an organic EL layer including a light emitting layer and formed on the first transparent electrode layer in the light emitting region between the partition walls, a second transparent electrode layer formed on the organic EL layer and divided with the partition wall, and a first auxiliary electrode group formed on the second transparent electrode layer with a plurality of metal fine lines disposed parallel with each other, characterized in that an angle θ1 is 0°
摘要:
An organic light-emitting transistor having a source electrode layer; a drain electrode layer facing the source electrode layer; an organic light-emitting layer formed between the source electrode layer and the drain electrode layer; a semiconductor layer formed between the organic light-emitting layer and the source electrode layer; and a gate electrode layer deposited to face through a gate insulation film to one face of the source electrode layer opposite to the other face facing the drain electrode layer. The organic light-emitting transistor further comprises: a charge-carrier suppression layer formed between the organic light-emitting layer and the source electrode layer to have an aperture; and a relay region formed between the charge-carrier suppression layer and the source electrode layer to relay charge-carriers from the source electrode layer to the aperture.
摘要:
A transparent organic EL element comprising: a transparent substrate, a first transparent electrode layer formed on the transparent substrate in stripe form, an insulating partition wall formed in stripe form in a direction orthogonal to the longitudinal direction of the first transparent electrode layer on the transparent substrate with the first transparent electrode layer formed, an organic EL layer including a light emitting layer and formed on the first transparent electrode layer in the light emitting region between the partition walls, a second transparent electrode layer formed on the organic EL layer and divided with the partition wall, and a first auxiliary electrode group formed on the second transparent electrode layer with a plurality of metal fine lines disposed parallel with each other, characterized in that an angle θ1 is 0°
摘要:
The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer.
摘要:
An organic light-emitting transistor having a source electrode layer; a drain electrode layer facing the source electrode layer; an organic light-emitting layer formed between the source electrode layer and the drain electrode layer; a semiconductor layer formed between the organic light-emitting layer and the source electrode layer; and a gate electrode layer deposited to face through a gate insulation film to one face of the source electrode layer opposite to the other face facing the drain electrode layer. The organic light-emitting transistor further comprises: a charge-carrier suppression layer formed between the organic light-emitting layer and the source electrode layer to have an aperture; and a relay region formed between the charge-carrier suppression layer and the source electrode layer to relay charge-carriers from the source electrode layer to the aperture.
摘要:
Disclosed is an organic light-emitting transistor device comprising a substrate, a first electrode layer formed on the upper side of the substrate, a multilayer structure formed locally on the upper side of the first electrode layer in a predetermined size and sequentially having an insulating layer, an auxiliary electrode layer and a charge injection-suppressing layer in this order, an organic EL layer formed on the upper side of the first electrode layer where at least the multilayer structure is not formed, and a second electrode layer formed on the upper side of the organic EL layer. This organic light-emitting transistor device is characterized in that the charge injection-suppressing layer is formed larger than the auxiliary electrode when viewed in plan.