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    Nonlinear resistor ceramic composition and electronic component
    1.
    发明授权
    Nonlinear resistor ceramic composition and electronic component 有权
    非线性电阻陶瓷组合物和电子元件

    公开(公告)号：US09242902B2

    公开(公告)日：2016-01-26

    申请号：US13078237

    申请日：2011-04-01

    申请人： Takahiro Itami ,  Kaname Ueda

    发明人： Takahiro Itami ,  Kaname Ueda

    IPC分类号： C04B35/50 ,  C04B35/453

    CPC分类号： C04B35/453 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3248 ,  C04B2235/3275 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/6025 ,  C04B2235/656 ,  C04B2235/786

    摘要： A nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 to less than 30 at. % of oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and does not include Al, Ga and In. Alternatively, a nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 at. % and less than 30 at. % of an oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and more than 0.01 to less than 10 at. % of calcium zirconate in terms of CaZrO3. By the present invention, deviations of various characteristics can be made small and grain growth of grains is suppressed with lowering CV product.

    摘要翻译： 非线性电阻陶瓷组合物包括氧化锌作为主要成分，并且作为副成分，相对于各元素而言，相对于100摩尔氧化锌，大于0.05至小于30原子。 Co的氧化物的％，大于0.05至小于20的。 Sr的氧化物的％，大于0.01至小于20原子。 除Sc和Pm之外，稀土氧化物的百分比大于0.01至小于10at。 Si的氧化物的％，不包括Al，Ga和In。 或者，非线性电阻器陶瓷组合物包含氧化锌作为主要成分，并且作为次要成分，相对于各元素而言，相对于100摩尔氧化锌，大于0.05原子。 ％和小于30。 Co的氧化物的％，大于0.05至小于20at。 Sr的氧化物的％，大于0.01至小于20原子。 除Sc和Pm之外，稀土氧化物的百分比大于0.01至小于10at。 Si的氧化物的％，大于0.01至小于10原子。 按CaZrO3计算的锆酸钙的百分比。 通过本发明，可以降低各种特性的偏差，并且通过降低CV积来抑制晶粒的晶粒生长。

    Chip varistor and chip varistor manufacturing method
    2.
    发明授权
    Chip varistor and chip varistor manufacturing method 有权
    片式变阻器和片式变阻器制造方法

    公开(公告)号：US08508325B2

    公开(公告)日：2013-08-13

    申请号：US13295606

    申请日：2011-11-14

    申请人： Kaname Ueda ,  Katsunari Moriai ,  Takahiro Itami

    发明人： Kaname Ueda ,  Katsunari Moriai ,  Takahiro Itami

    IPC分类号： H01C7/10

    CPC分类号： H01C7/102 ,  H01C7/112 ,  Y10T29/49082

    摘要： A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and exhibits the nonlinear voltage-current characteristics. The plurality of electroconductive sections are arranged on both sides of the varistor section and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The terminal electrodes are connected to the respective second principal surfaces of the electroconductive sections.

    摘要翻译： 芯片变阻器设置有变阻器部分，多个导电部分和多个端子电极。 变阻器部分由以ZnO为主要成分的烧结体构成，具有非线性的电压 - 电流特性。 多个导电部分布置在可变电阻部分的两侧，并且每个导电部分具有连接到变阻器部分的第一主表面和与第一主表面相对的第二主表面。 端子电极连接到导电部分的相应的第二主表面。

    CHIP VARISTOR
    3.
    发明申请
    CHIP VARISTOR 有权
    芯片变压器

    公开(公告)号：US20130049922A1

    公开(公告)日：2013-02-28

    申请号：US13587310

    申请日：2012-08-16

    申请人： Kaname UEDA ,  Katsunari MORIAI ,  Takahiro ITAMI

    发明人： Kaname UEDA ,  Katsunari MORIAI ,  Takahiro ITAMI

    IPC分类号： H01C7/10

    CPC分类号： H01C1/148 ,  H01C7/1006 ,  H01C7/112

    摘要： A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

    摘要翻译： 芯片变阻器设置有变阻器部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成，具有非线性的电压 - 电流特性，并具有彼此相对的一对主面。 多个端子电极分别连接到压敏电阻部分。 每个端子电极具有连接到主表面中的任一个的第一电极部分和连接到第一电极部分的第二电极部分。

    CHIP-TYPE ELECTRONIC COMPONENT
    4.
    发明申请
    CHIP-TYPE ELECTRONIC COMPONENT 有权
    芯片型电子元件

    公开(公告)号：US20090296312A1

    公开(公告)日：2009-12-03

    申请号：US12470168

    申请日：2009-05-21

    申请人： Kaname Ueda ,  Dai Matsuoka ,  Naoki Chida ,  Izuru Soma ,  Hisayoshi Saito ,  Katsunari Moriai

    发明人： Kaname Ueda ,  Dai Matsuoka ,  Naoki Chida ,  Izuru Soma ,  Hisayoshi Saito ,  Katsunari Moriai

    IPC分类号： H01G4/228 ,  H01C7/10 ,  H01C1/142

    CPC分类号： H01G4/005 ,  H01C1/142 ,  H01C7/10 ,  H01G4/12 ,  H01G4/228 ,  H01G4/30

    摘要： A chip-type electronic component has: a ceramic element body; a plurality of first and second internal electrodes arranged in the ceramic element body so as to be opposed at least in part to each other; a first external connection conductor to which the plurality of first internal electrodes are connected; a second external connection conductor to which the plurality of second internal electrodes are connected; first and second terminal electrodes; a first internal connection conductor arranged in the ceramic element body and connecting the first external connection conductor and the first terminal electrode; and a second internal connection conductor arranged in the ceramic element body and connecting the second external connection conductor and the second terminal electrode. The number of the first internal connection conductor is set to be smaller than the number of the first internal electrodes and the number of the second internal connection conductor is set to be smaller than the number of the second internal electrodes.

    摘要翻译： 芯片型电子元件具有：陶瓷元件体; 多个第一和第二内部电极，其布置在所述陶瓷元件主体中，以至少部分地彼此相对; 连接有多个第一内部电极的第一外部连接导体; 连接所述多个第二内部电极的第二外部连接导体; 第一和第二端子电极; 布置在所述陶瓷元件主体中并连接所述第一外部连接导体和所述第一端子电极的第一内部连接导体; 以及布置在陶瓷元件主体中并连接第二外部连接导体和第二端子电极的第二内部连接导体。 第一内部连接导体的数量被设定为小于第一内部电极的数量，并且第二内部连接导体的数量被设定为小于第二内部电极的数量。

    Ceramic electronic device and method of production of same
    5.
    发明授权
    Ceramic electronic device and method of production of same 失效
    陶瓷电子器件及其制造方法

    公开(公告)号：US07131174B2

    公开(公告)日：2006-11-07

    申请号：US10863479

    申请日：2004-06-09

    申请人： Ryou Kobayashi ,  Kaname Ueda ,  Yasushi Izumibe ,  Hitoshi Ishida ,  Akira Saitoh

    发明人： Ryou Kobayashi ,  Kaname Ueda ,  Yasushi Izumibe ,  Hitoshi Ishida ,  Akira Saitoh

    IPC分类号： H01G7/00

    CPC分类号： H01G4/30 ,  Y10T29/435 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24975 ,  Y10T428/252

    摘要： A method of production of a ceramic electronic device such as a multilayer ceramic capacitor, comprising forming a first ceramic coating layer on the surface of a substrate, forming an internal electrode on the surface of the first ceramic coating layer, then forming a second ceramic coating layer on the surface of the first ceramic coating layer so as to cover the internal electrode. In this case, when a mean particle size of ceramic particles of the first ceramic coating layer is α1, a thickness of the first ceramic coating layer is T1, a mean particle size of ceramic particles of the second ceramic coating layer is α2, and a thickness of the second ceramic coating layer is T2, the conditions of α1≦α2, 0.05

    摘要翻译： 一种陶瓷电子器件如多层陶瓷电容器的制造方法，包括在基板表面上形成第一陶瓷涂层，在第一陶瓷涂层的表面上形成内部电极，然后形成第二陶瓷涂层 在第一陶瓷涂层的表面上覆盖内部电极。 在这种情况下，当第一陶瓷被覆层的陶瓷粒子的平均粒径为α1时，第一陶瓷被覆层的厚度为T 1，第二陶瓷被覆层的陶瓷粒子的平均粒径为α2 ，第二陶瓷涂层的厚度为T 2，满足α1 <α2，0.05 <α1 <=0.35μm，T 1

    Chip varistor
    6.
    发明授权
    Chip varistor 有权
    片式压敏电阻

    公开(公告)号：US08552831B2

    公开(公告)日：2013-10-08

    申请号：US13587310

    申请日：2012-08-16

    申请人： Kaname Ueda ,  Katsunari Moriai ,  Takahiro Itami

    发明人： Kaname Ueda ,  Katsunari Moriai ,  Takahiro Itami

    IPC分类号： H01C7/10

    CPC分类号： H01C1/148 ,  H01C7/1006 ,  H01C7/112

    摘要： A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

    摘要翻译： 芯片变阻器设置有变阻器部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成，具有非线性的电压 - 电流特性，并具有彼此相对的一对主面。 多个端子电极分别连接到压敏电阻部分。 每个端子电极具有连接到主表面中的任一个的第一电极部分和连接到第一电极部分的第二电极部分。

    CHIP VARISTOR AND CHIP VARISTOR MANUFACTURING METHOD
    8.
    发明申请
    CHIP VARISTOR AND CHIP VARISTOR MANUFACTURING METHOD 有权
    芯片变压器和芯片变压器制造方法

    公开(公告)号：US20120139688A1

    公开(公告)日：2012-06-07

    申请号：US13295606

    申请日：2011-11-14

    申请人： Kaname UEDA ,  Katsunari MORIAI ,  Takahiro ITAMI

    发明人： Kaname UEDA ,  Katsunari MORIAI ,  Takahiro ITAMI

    IPC分类号： H01C7/10 ,  H01C17/00

    CPC分类号： H01C7/102 ,  H01C7/112 ,  Y10T29/49082

    摘要： A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and exhibits the nonlinear voltage-current characteristics. The plurality of electroconductive sections are arranged on both sides of the varistor section and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The terminal electrodes are connected to the respective second principal surfaces of the electroconductive sections.

    摘要翻译： 芯片变阻器设置有变阻器部分，多个导电部分和多个端子电极。 变阻器部分由以ZnO为主要成分的烧结体构成，具有非线性的电压 - 电流特性。 多个导电部分布置在可变电阻部分的两侧，并且每个导电部分具有连接到变阻器部分的第一主表面和与第一主表面相对的第二主表面。 端子电极连接到导电部分的相应的第二主表面。

    CHIP VARISTOR
    10.
    发明申请
    CHIP VARISTOR 有权
    芯片变压器

    公开(公告)号：US20130049923A1

    公开(公告)日：2013-02-28

    申请号：US13587326

    申请日：2012-08-16

    申请人： Kaname UEDA ,  Katsunari MORIAI ,  Takahiro ITAMI

    发明人： Kaname UEDA ,  Katsunari MORIAI ,  Takahiro ITAMI

    IPC分类号： H01C7/10

    CPC分类号： H01C1/148 ,  H01C7/1006 ,  H01C7/112

    摘要： A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.

    摘要翻译： 芯片变阻器设置有变阻器部分，多个导电部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成，具有非线性的电压 - 电流特性。 所述多个导电部由以ZnO为主要成分的烧结体构成，并且在其间配置有可变电阻部，并且各导电部具有连接到非线性电阻部的第一主面和与第一主面相对的第二主面 。 多个端子电极分别连接到相应的导电部分。 每个端子电极具有连接到第二主表面的第一电极部分和连接到第一电极部分的第二电极部分。