CHIP VARISTOR AND CHIP VARISTOR MANUFACTURING METHOD
    1.
    发明申请
    CHIP VARISTOR AND CHIP VARISTOR MANUFACTURING METHOD 有权
    芯片变压器和芯片变压器制造方法

    公开(公告)号:US20120139688A1

    公开(公告)日:2012-06-07

    申请号:US13295606

    申请日:2011-11-14

    IPC分类号: H01C7/10 H01C17/00

    摘要: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and exhibits the nonlinear voltage-current characteristics. The plurality of electroconductive sections are arranged on both sides of the varistor section and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The terminal electrodes are connected to the respective second principal surfaces of the electroconductive sections.

    摘要翻译: 芯片变阻器设置有变阻器部分,多个导电部分和多个端子电极。 变阻器部分由以ZnO为主要成分的烧结体构成,具有非线性的电压 - 电流特性。 多个导电部分布置在可变电阻部分的两侧,并且每个导电部分具有连接到变阻器部分的第一主表面和与第一主表面相对的第二主表面。 端子电极连接到导电部分的相应的第二主表面。

    Chip varistor
    2.
    发明授权
    Chip varistor 有权
    片式压敏电阻

    公开(公告)号:US08525634B2

    公开(公告)日:2013-09-03

    申请号:US13587326

    申请日:2012-08-16

    IPC分类号: H01C7/10

    摘要: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.

    摘要翻译: 芯片变阻器设置有变阻器部分,多个导电部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成,具有非线性的电压 - 电流特性。 所述多个导电部由以ZnO为主要成分的烧结体构成,并且在其间配置有可变电阻部,各导电部具有连接到所述变阻器部的第一主面和与所述第一主面相反的第二主面 。 多个端子电极分别连接到相应的导电部分。 每个端子电极具有连接到第二主表面的第一电极部分和连接到第一电极部分的第二电极部分。

    Chip varistor
    3.
    发明授权
    Chip varistor 有权
    片式压敏电阻

    公开(公告)号:US08552831B2

    公开(公告)日:2013-10-08

    申请号:US13587310

    申请日:2012-08-16

    IPC分类号: H01C7/10

    摘要: A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

    摘要翻译: 芯片变阻器设置有变阻器部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成,具有非线性的电压 - 电流特性,并具有彼此相对的一对主面。 多个端子电极分别连接到压敏电阻部分。 每个端子电极具有连接到主表面中的任一个的第一电极部分和连接到第一电极部分的第二电极部分。

    Nonlinear resistor ceramic composition and electronic component
    4.
    发明授权
    Nonlinear resistor ceramic composition and electronic component 有权
    非线性电阻陶瓷组合物和电子元件

    公开(公告)号:US09242902B2

    公开(公告)日:2016-01-26

    申请号:US13078237

    申请日:2011-04-01

    IPC分类号: C04B35/50 C04B35/453

    摘要: A nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 to less than 30 at. % of oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and does not include Al, Ga and In. Alternatively, a nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 at. % and less than 30 at. % of an oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and more than 0.01 to less than 10 at. % of calcium zirconate in terms of CaZrO3. By the present invention, deviations of various characteristics can be made small and grain growth of grains is suppressed with lowering CV product.

    摘要翻译: 非线性电阻陶瓷组合物包括氧化锌作为主要成分,并且作为副成分,相对于各元素而言,相对于100摩尔氧化锌,大于0.05至小于30原子。 Co的氧化物的%,大于0.05至小于20的。 Sr的氧化物的%,大于0.01至小于20原子。 除Sc和Pm之外,稀土氧化物的百分比大于0.01至小于10at。 Si的氧化物的%,不包括Al,Ga和In。 或者,非线性电阻器陶瓷组合物包含氧化锌作为主要成分,并且作为次要成分,相对于各元素而言,相对于100摩尔氧化锌,大于0.05原子。 %和小于30。 Co的氧化物的%,大于0.05至小于20at。 Sr的氧化物的%,大于0.01至小于20原子。 除Sc和Pm之外,稀土氧化物的百分比大于0.01至小于10at。 Si的氧化物的%,大于0.01至小于10原子。 按CaZrO3计算的锆酸钙的百分比。 通过本发明,可以降低各种特性的偏差,并且通过降低CV积来抑制晶粒的晶粒生长。

    Chip varistor and chip varistor manufacturing method
    5.
    发明授权
    Chip varistor and chip varistor manufacturing method 有权
    片式变阻器和片式变阻器制造方法

    公开(公告)号:US08508325B2

    公开(公告)日:2013-08-13

    申请号:US13295606

    申请日:2011-11-14

    IPC分类号: H01C7/10

    摘要: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and exhibits the nonlinear voltage-current characteristics. The plurality of electroconductive sections are arranged on both sides of the varistor section and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The terminal electrodes are connected to the respective second principal surfaces of the electroconductive sections.

    摘要翻译: 芯片变阻器设置有变阻器部分,多个导电部分和多个端子电极。 变阻器部分由以ZnO为主要成分的烧结体构成,具有非线性的电压 - 电流特性。 多个导电部分布置在可变电阻部分的两侧,并且每个导电部分具有连接到变阻器部分的第一主表面和与第一主表面相对的第二主表面。 端子电极连接到导电部分的相应的第二主表面。

    CHIP VARISTOR
    6.
    发明申请
    CHIP VARISTOR 有权
    芯片变压器

    公开(公告)号:US20130049922A1

    公开(公告)日:2013-02-28

    申请号:US13587310

    申请日:2012-08-16

    IPC分类号: H01C7/10

    摘要: A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

    摘要翻译: 芯片变阻器设置有变阻器部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成,具有非线性的电压 - 电流特性,并具有彼此相对的一对主面。 多个端子电极分别连接到压敏电阻部分。 每个端子电极具有连接到主表面中的任一个的第一电极部分和连接到第一电极部分的第二电极部分。

    VARISTOR AND METHOD FOR MANUFACTURING VARISTOR
    7.
    发明申请
    VARISTOR AND METHOD FOR MANUFACTURING VARISTOR 有权
    变压器和制造变压器的方法

    公开(公告)号:US20130021133A1

    公开(公告)日:2013-01-24

    申请号:US13545505

    申请日:2012-07-10

    IPC分类号: H01C7/10 H01C17/00

    摘要: A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.

    摘要翻译: 变阻器设置有可变电阻元件主体,多个内部电极,布置在可变电阻元件主体中,以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极,布置在可变电阻元件的表面上 并连接到相应的内部电极。 外部电极具有烧结电极层,该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。 可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

    Varistor and method for manufacturing varistor
    8.
    发明授权
    Varistor and method for manufacturing varistor 有权
    压敏电阻及其制造方法

    公开(公告)号:US08471673B2

    公开(公告)日:2013-06-25

    申请号:US13545505

    申请日:2012-07-10

    IPC分类号: H01C7/10

    摘要: A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.

    摘要翻译: 变阻器设置有可变电阻元件主体,多个内部电极,布置在可变电阻元件主体中,以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极,布置在可变电阻元件的表面上 并连接到相应的内部电极。 外部电极具有烧结电极层,该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。 可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

    CHIP VARISTOR
    9.
    发明申请
    CHIP VARISTOR 有权
    芯片变压器

    公开(公告)号:US20130049923A1

    公开(公告)日:2013-02-28

    申请号:US13587326

    申请日:2012-08-16

    IPC分类号: H01C7/10

    摘要: A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.

    摘要翻译: 芯片变阻器设置有变阻器部分,多个导电部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成,具有非线性的电压 - 电流特性。 所述多个导电部由以ZnO为主要成分的烧结体构成,并且在其间配置有可变电阻部,并且各导电部具有连接到非线性电阻部的第一主面和与第一主面相对的第二主面 。 多个端子电极分别连接到相应的导电部分。 每个端子电极具有连接到第二主表面的第一电极部分和连接到第一电极部分的第二电极部分。

    NONLINEAR RESISTOR CERAMIC COMPOSITION AND ELECTRONIC COMPONENT
    10.
    发明申请
    NONLINEAR RESISTOR CERAMIC COMPOSITION AND ELECTRONIC COMPONENT 有权
    非线性电阻陶瓷组合物和电子元件

    公开(公告)号:US20110245065A1

    公开(公告)日:2011-10-06

    申请号:US13078237

    申请日:2011-04-01

    IPC分类号: C04B35/453

    摘要: A nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 to less than 30 at. % of oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and does not include Al, Ga and In. Alternatively, a nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 at. % and less than 30 at. % of an oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and more than 0.01 to less than 10 at. % of calcium zirconate in terms of CaZrO3. By the present invention, deviations of various characteristics can be made small and grain growth of grains is suppressed with lowering CV product.

    摘要翻译: 非线性电阻陶瓷组合物包括氧化锌作为主要成分,并且作为副成分,相对于各元素而言,相对于100摩尔氧化锌,大于0.05至小于30原子。 Co的氧化物的%,大于0.05至小于20的。 Sr的氧化物的%,大于0.01至小于20原子。 除Sc和Pm之外,稀土氧化物的百分比大于0.01至小于10at。 Si的氧化物的%,不包括Al,Ga和In。 或者,非线性电阻器陶瓷组合物包含氧化锌作为主要成分,并且作为次要成分,相对于各元素而言,相对于100摩尔氧化锌,大于0.05原子。 %和小于30。 Co的氧化物的%,大于0.05至小于20at。 Sr的氧化物的%,大于0.01至小于20原子。 除Sc和Pm之外,稀土氧化物的百分比大于0.01至小于10at。 Si的氧化物的%,大于0.01至小于10原子。 按CaZrO3计算的锆酸钙的百分比。 通过本发明,可以降低各种特性的偏差,并且通过降低CV积来抑制晶粒的晶粒生长。