公开(公告)号：USRE44637E1

公开(公告)日：2013-12-10

申请号：US12761160

申请日：2010-04-15

申请人： Jin Li ,  Jiutao Li

发明人： Jin Li ,  Jiutao Li

IPC分类号： H01L21/00

CPC分类号： H01L27/14601 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685

摘要： A photon collector has a reflecting metal layer to increase photon collection efficiency in a solid state imaging sensor. The reflecting metal layer reflects incident light internally to a photosensor. A plurality of photon collectors is formed in a wafer substrate over an array of photosensors. The photon collector is formed in an opening in an insulating layer provided over each photosensor.

摘要翻译： 光子收集器具有反射金属层，以增加固态成像传感器中的光子收集效率。 反射金属层将入射光内部反射到光电传感器。 在光电传感器阵列上的晶片衬底中形成多个光子收集器。 光子收集器形成在设置在每个光传感器上的绝缘层的开口中。

公开(公告)号：US07724439B2

公开(公告)日：2010-05-25

申请号：US11976404

申请日：2007-10-24

申请人： Jin Li ,  Jiutao Li

发明人： Jin Li ,  Jiutao Li

IPC分类号： G02B27/10 ,  G02B3/00

CPC分类号： G02B3/0087 ,  G02B3/0056

摘要： A lens, a lens array and imaging device and system containing a lens, and a method of forming a lens array and an imaging device and system containing a lens. Each lens has varying reflection indices in a radial direction.

摘要翻译： 透镜，透镜阵列和包含透镜的成像装置和系统，以及形成透镜阵列的方法以及包含透镜的成像装置和系统。 每个透镜在径向上具有不同的反射指数。

公开(公告)号：US20090098717A1

公开(公告)日：2009-04-16

申请号：US12249744

申请日：2008-10-10

申请人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

发明人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

IPC分类号： H01L31/20

CPC分类号： C23C14/548 ,  C23C14/0623 ,  C23C14/3464 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/1625

摘要： The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

摘要翻译： 本发明涉及允许诸如硒化锗（GexSe1-x）的硫族化物玻璃掺杂金属如银，铜或锌的方法和装置，而不用紫外线（UV）光二极化步骤来掺杂硫族化物 玻璃与金属。 掺杂有金属的硫族化物玻璃可用于将数据存储在存储器件中。 有利的是，系统和方法共同溅射金属和硫族化物玻璃，并允许相对精确和有效地控制掺杂金属和硫族化物玻璃之间的组成比。 进一步有利的是，这些系统和方法能够在硫族化物玻璃和金属的形成层的深度上以相对高的均匀度掺杂硫族化物玻璃。 而且，这些系统和方法允许以薄膜深度的受控方式改变金属浓度。

公开(公告)号：US07446393B2

公开(公告)日：2008-11-04

申请号：US11710517

申请日：2007-02-26

申请人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

发明人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

IPC分类号： H01L29/20

CPC分类号： C23C14/548 ,  C23C14/0623 ,  C23C14/3464 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/1625

摘要： The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

摘要翻译： 本发明涉及允许硫族化物玻璃如硒化锗（Ge x Sb 1-x x）掺杂金属如银的方法和装置， 铜或锌，而不用紫外线（UV）光二极化步骤来用金属掺杂硫族化物玻璃。 掺杂有金属的硫族化物玻璃可用于将数据存储在存储器件中。 有利的是，系统和方法共同溅射金属和硫族化物玻璃，并允许相对精确和有效地控制掺杂金属和硫族化物玻璃之间的组成比。 进一步有利的是，这些系统和方法能够在硫族化物玻璃和金属的形成层的深度上以相对高的均匀度掺杂硫族化物玻璃。 而且，这些系统和方法允许以薄膜深度的受控方式改变金属浓度。

公开(公告)号：US20080268611A1

公开(公告)日：2008-10-30

申请号：US12216434

申请日：2008-07-03

申请人： Jiutao Li ,  Ralph Kauffman ,  Richard A. Mauritzson

发明人： Jiutao Li ,  Ralph Kauffman ,  Richard A. Mauritzson

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary methods creates a smooth STI sidewall surface, prior to performing oxidation, by reconstructing silicon atoms at the surface. The suggested STI region can be used in imager pixel cells or memory device applications.

公开(公告)号：US20080210921A1

公开(公告)日：2008-09-04

申请号：US12073057

申请日：2008-02-28

申请人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

发明人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

IPC分类号： H01L47/00

CPC分类号： H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

摘要： A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

公开(公告)号：US07410863B2

公开(公告)日：2008-08-12

申请号：US11516730

申请日：2006-09-07

申请人： Li Li ,  Jiutao Li

发明人： Li Li ,  Jiutao Li

IPC分类号： H01L21/8242

CPC分类号： H01L45/1683 ,  H01L21/76877 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/143 ,  Y10S257/903 ,  Y10S257/904 ,  Y10S257/905 ,  Y10S257/906

摘要： A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator. The metallic material may be deposited on the surface and within the via. A hard mask of a flowable oxide is deposited over the metallic material in the via to protect the metallic material in the via. A subsequent dry sputter etch removes the metallic material from the surface of the insulator and a portion of the hard mask. After complete removal of the hard mask, a glass material is recessed over the metallic material in the via. Then, a layer of a metal-containing material is formed over the glass material. Finally, a second conductor is formed on the surface of the insulator.

摘要翻译： 描述了用金属填充PCRAM电池的通孔的方法。 包括基板，第一导体和通孔延伸的绝缘体的PCRAM中间结构具有形成在通孔内和绝缘体表面上的金属材料。 金属材料可以沉积在表面上和通孔内。 可流动氧化物的硬掩模沉积在通孔中的金属材料上，以保护通孔中的金属材料。 随后的干溅射蚀刻从绝缘体的表面和硬掩模的一部分去除金属材料。 在完全去除硬掩模之后，玻璃材料在通孔中的金属材料上凹进。 然后，在玻璃材料上形成含金属材料层。 最后，在绝缘体的表面上形成第二导体。

公开(公告)号：US07365305B2

公开(公告)日：2008-04-29

申请号：US11641773

申请日：2006-12-20

申请人： Jin Li ,  Jiutao Li ,  Ulrich Boettiger ,  Loriston Ford

发明人： Jin Li ,  Jiutao Li ,  Ulrich Boettiger ,  Loriston Ford

IPC分类号： H01J5/02

CPC分类号： H01L27/14627 ,  G02B3/0018 ,  G02B3/0037 ,  G02B3/0056

摘要： A microlens structure includes lower lens layers on a substrate. A sputtered layer of glass, such as silicon oxide, is applied over the lower lens layers at an angle away from normal to form upper lens layers that increase the effective focal length of the microlens structure. The upper lens layers can be deposited in an aspherical shape with radii of curvature longer than the lower lens layers. As a result, small microlenses can be provided with longer focal lengths. The microlenses are arranged in arrays for use in imaging devices.

摘要翻译： 微透镜结构包括在基底上的较低透镜层。 将溅射的玻璃层（例如氧化硅）施加在下透镜层上以与法线成一定角度以形成增加微透镜结构的有效焦距的上透镜层。 上透镜层可以沉积成具有比下透镜层更长的曲率半径的非球面形状。 结果，可以提供更小焦距的小微透镜。 微透镜被布置成阵列以用于成像装置。

公开(公告)号：US07348205B2

公开(公告)日：2008-03-25

申请号：US11085009

申请日：2005-03-21

申请人： Kristy A. Campbell ,  Terry L. Gilton ,  John T. Moore ,  Jiutao Li

发明人： Kristy A. Campbell ,  Terry L. Gilton ,  John T. Moore ,  Jiutao Li

IPC分类号： H01L21/00

CPC分类号： H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1641 ,  H01L45/1658 ,  H01L45/1683

摘要： A method of forming a resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and AxBy, where “B” is selected from S, Se and Te and mixtures thereof, and where “A” comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table. In one aspect, the chalcogenide comprising material is exposed to an HNO3 solution. In one aspect the outer surface is oxidized effective to form a layer comprising at least one of an oxide of “A” or an oxide of “B”. In one aspect, a passivating material is formed over the metal doped chalcogenide comprising material. A second conductive electrode material is deposited, and a second conductive electrode material of the device is ultimately formed therefrom.

摘要翻译： 形成电阻可变器件的方法包括在衬底上形成第一导电电极材料。 在第一导电电极材料上形成包含材料的掺杂金属的硫族化物。 其中“B”选自S，Se和Te及其混合物，其中“A”包括至少一个元素 其选自周期表的第13组，第14组，第15组或第17组。 在一个方面，将包含硫属元素的材料暴露于HNO 3 N 3溶液中。 在一个方面，外表面被有效地氧化以形成包含“A”的氧化物或“B”的氧化物中的至少一种的层。 在一个方面，在包含金属的硫族化物的材料上形成钝化材料。 沉积第二导电电极材料，并且最终由器件的第二导电电极材料形成。

公开(公告)号：US20070284510A1

公开(公告)日：2007-12-13

申请号：US11449756

申请日：2006-06-09

申请人： Jiutao Li ,  Jin Li

发明人： Jiutao Li ,  Jin Li

IPC分类号： H01L27/00

CPC分类号： H01L27/14627 ,  H01L27/14621

摘要： A microlens having a plurality of lens material units separated by a plurality of trenches and a method of forming the same is disclosed. The relationship of the trenches to the lens material is such that an average index of refraction of the microlens decreases from a center to an edge of the microlens.

摘要翻译： 公开了具有由多个沟槽分隔开的多个透镜材料单元的微透镜及其形成方法。 沟槽与透镜材料的关系使得微透镜的平均折射率从微透镜的中心向边缘减小。