公开(公告)号：US20150282676A1

公开(公告)日：2015-10-08

申请号：US14439665

申请日：2014-03-04

申请人： Jinwook Lee

发明人： Jinwook Lee

IPC分类号： A47K3/28 ,  A61H35/00 ,  B05B1/18

CPC分类号： A47K3/28 ,  A45D2019/0033 ,  A61H7/003 ,  A61H9/0028 ,  A61H33/6036 ,  A61H35/008 ,  A61H2201/1238 ,  A61H2201/1695 ,  A61H2205/021 ,  B05B1/18 ,  B05B1/28 ,  B05B14/30 ,  E03C1/0404

摘要： Disclosed is an attachment cap unit for shower. The attachment cap unit includes: a head fix unit surrounding the outside of a shower head which sprays water through a plurality of injection holes formed on one side of the shower head; a scalp contact unit which is made from an elastic soft material at the lower end of the head fix unit and which is formed to be in close contact with the scalp such that the end edge portion thereof extends downwardly below one side of the shower head on which the injection holes are formed; a drainpipe provided in the head fix unit; a hose which is connected to the drainpipe for guiding water sprayed from the injection holes of the shower head to the outside; and an elastic protrusion attached onto one side of the shower head on which the injection holes are formed.

摘要翻译： 公开了一种用于淋浴的附件帽单元。 附件盖单元包括：头部固定单元，其围绕喷淋头的外部喷洒水，所述淋浴头通过形成在淋浴喷头的一侧上的多个喷射孔喷射; 头皮接触单元，其由头部固定单元的下端处的弹性软材料制成，并且形成为与头皮紧密接触，使得其端部边缘部分在淋浴头的一侧向下延伸， 其中形成注射孔; 设置在头部固定单元中的排水管; 软管，其连接到排水管，用于引导从喷淋头的喷射孔喷射到外部的水; 以及弹性突起，其附接到其上形成有喷射孔的喷淋头的一侧。

公开(公告)号：US20090142927A1

公开(公告)日：2009-06-04

申请号：US12287073

申请日：2008-10-06

申请人： Ming Jin ,  Ilya V. Karpov ,  Jinwook Lee ,  Narahari Ramanuja

发明人： Ming Jin ,  Ilya V. Karpov ,  Jinwook Lee ,  Narahari Ramanuja

IPC分类号： H01L21/311

CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A small critical dimension element, such as a heater for an ovonic unified memory, may be formed within a pore by using successive sidewall spacers. The use of at least two successive spacers enables the limitations imposed by lithography and the limitations imposed by bread loafing to be overcome to provide reduced critical dimension elements.

摘要翻译： 可以通过使用连续的侧壁间隔物在孔内形成小的关键尺寸元件，例如用于二次统一存储器的加热器。 使用至少两个连续的间隔物使得能够克服通过光刻所施加的限制，并且克服由面包变形所施加的限制以提供减小的临界尺寸元件。

公开(公告)号：US20180033867A1

公开(公告)日：2018-02-01

申请号：US15723729

申请日：2017-10-03

申请人： GeumJung SEONG ,  JinWook LEE ,  Dohyoung KIM ,  Sungwoo MYUNG ,  Jisoo OH ,  Yong-Ho JEON

发明人： GeumJung SEONG ,  JinWook LEE ,  Dohyoung KIM ,  Sungwoo MYUNG ,  Jisoo OH ,  Yong-Ho JEON

IPC分类号： H01L29/66 ,  H01L21/311 ,  H01L29/49 ,  H01L29/40 ,  H01L21/3213 ,  H01L21/3105

CPC分类号： H01L29/66545 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/4966

摘要： The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern.

公开(公告)号：US20160240630A1

公开(公告)日：2016-08-18

申请号：US14988867

申请日：2016-01-06

申请人： GeumJung Seong ,  JinWook Lee ,  Dohyoung Kim ,  Sungwoo Myung ,  Jisoo Oh ,  Yong-Ho Jeon

发明人： GeumJung Seong ,  JinWook Lee ,  Dohyoung Kim ,  Sungwoo Myung ,  Jisoo Oh ,  Yong-Ho Jeon

IPC分类号： H01L29/66 ,  H01L29/49 ,  H01L21/311 ,  H01L29/40 ,  H01L21/306 ,  H01L21/308

CPC分类号： H01L29/66545 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/401 ,  H01L29/4966

摘要： The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern.

摘要翻译： 本发明构思涉及一种半导体器件及其制造方法。 半导体器件包括从衬底突出的有源图案，设置在衬底上的层间介电层，并且包括暴露有源图案的沟槽和沟槽中的栅电极。 凹槽包括具有第一宽度的第一凹槽和具有大于第一宽度的第二宽度的第二凹槽。 栅电极包括第一沟槽中的第一栅极电极和第二沟槽中的第二栅电极。 第一和第二栅电极中的每一个包括底表面上的第一功函导电图案和第一沟槽和第二沟槽中相应一个的侧壁，以及第一功函导电图案上的第二功函导电图案。

公开(公告)号：US20140009300A1

公开(公告)日：2014-01-09

申请号：US13922669

申请日：2013-06-20

申请人： Sangdoo HA ,  Jinwook Lee ,  Moonhyun Kim ,  Deoghyeon Kim

发明人： Sangdoo HA ,  Jinwook Lee ,  Moonhyun Kim ,  Deoghyeon Kim

IPC分类号： G08B21/18

CPC分类号： G08B21/187 ,  G05B15/02 ,  G05B23/0205 ,  G05B23/027 ,  H04L12/282 ,  H04L12/2825 ,  H04L12/2834 ,  H04L2012/2841 ,  H04L2012/285

摘要： Provided are a home appliance and its system. The home appliance include: an input unit for inputting driving information; a data unit for storing a diagnosis logic; a control unit for diagnosing a state of the home appliance and whether a failure occurs according to the diagnosis logic on the basis of product information including the driving information inputted from the input unit, operation information detected during an operation, and failure information occurring during an operation, in order to generate a diagnosis result including the operation information and the failure information, and encoding transmission information including predetermined data for a diagnosis, which are selected from the driving operation, and the diagnosis result and outputting the encoded transmission information; a modulator for converting the encoded transmission information; and a sound output unit for outputting the transmission information converted by the modulator as a sound including a plurality of frequencies.

摘要翻译： 提供家电及其系统。 家用电器包括：用于输入驾驶信息的输入单元; 用于存储诊断逻辑的数据单元; 控制单元，用于根据包括从输入单元输入的驾驶信息的产品信息，在操作期间检测到的操作信息以及在操作期间发生的故障信息，根据诊断逻辑诊断家用电器的状态以及是否发生故障 操作，以产生包括操作信息和故障信息的诊断结果，以及编码包括从驾驶操作和诊断结果中选择的用于诊断的预定数据的传输信息并输出编码的传输信息; 用于转换编码的传输信息的调制器; 以及声音输出单元，用于将由调制器转换的发送信息作为包括多个频率的声音输出。

公开(公告)号：US08067260B1

公开(公告)日：2011-11-29

申请号：US12792992

申请日：2010-06-03

申请人： Ming Jin ,  Ilya V. Karpov ,  Jinwook Lee ,  Narahari Ramanuja

发明人： Ming Jin ,  Ilya V. Karpov ,  Jinwook Lee ,  Narahari Ramanuja

IPC分类号： H01L45/00

CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A small critical dimension element, such as a heater for an ovonic unified memory, may be formed within a pore by using successive sidewall spacers. The use of at least two successive spacers enables the limitations imposed by lithography and the limitations imposed by bread loafing be overcome to provide reduced critical dimension elements.

摘要翻译： 可以通过使用连续的侧壁间隔物在孔内形成小的关键尺寸元件，例如用于二次统一存储器的加热器。 使用至少两个连续的间隔物可以克服光刻造成的局限性，并克服面包铺面施加的限制，以提供减少的临界尺寸元件。

公开(公告)号：US08026173B2

公开(公告)日：2011-09-27

申请号：US12048121

申请日：2008-03-13

申请人： Ilya Karpov ,  Yudong Kim ,  Ming Jin ,  Shyam Prasad Teegapuram ,  Jinwook Lee

发明人： Ilya Karpov ,  Yudong Kim ,  Ming Jin ,  Shyam Prasad Teegapuram ,  Jinwook Lee

IPC分类号： H01L21/8239

CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126

摘要： A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region extending over an own heater. The heaters have all a relatively uniform height. The height uniformity is achieved by forming the heaters within pores in an insulator that includes an etch stop layer and a sacrificial layer. The sacrificial layer is removed through an etching process such as chemical mechanical planarization. Since the etch stop layer may be formed in a repeatable way and is common across all the devices on a wafer, considerable uniformity is achieved in heater height. Heater height uniformity results in more uniformity in programmed memory characteristics.

摘要翻译： 一种由具有在自身加热器上延伸的硫族化物存储区的多个相变存储器件形成的相变存储器。 加热器具有相对均匀的高度。 通过在包括蚀刻停止层和牺牲层的绝缘体的孔内形成加热器来实现高度均匀性。 通过诸如化学机械平面化的蚀刻工艺去除牺牲层。 由于蚀刻停止层可以以可重复的方式形成，并且在晶片上的所有器件上是共同的，所以在加热器高度方面实现了相当大的均匀性。 加热器高度均匀性导致编程存储器特性更均匀。

公开(公告)号：US20090020743A1

公开(公告)日：2009-01-22

申请号：US12048121

申请日：2008-03-13

申请人： Ilya Karpov ,  Yudong Kim ,  Ming Jin ,  Shyam Prasad Teegapuram ,  Jinwook Lee

发明人： Ilya Karpov ,  Yudong Kim ,  Ming Jin ,  Shyam Prasad Teegapuram ,  Jinwook Lee

IPC分类号： H01L45/00

CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126

摘要： A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region extending over an own heater. The heaters have all a relatively uniform height. The height uniformity is achieved by forming the heaters within pores in an insulator that includes an etch stop layer and a sacrificial layer. The sacrificial layer is removed through an etching process such as chemical mechanical planarization. Since the etch stop layer may be formed in a repeatable way and is common across all the devices on a wafer, considerable uniformity is achieved in heater height. Heater height uniformity results in more uniformity in programmed memory characteristics.

摘要翻译： 一种由具有在自身加热器上延伸的硫族化物存储区的多个相变存储器件形成的相变存储器。 加热器具有相对均匀的高度。 通过在包括蚀刻停止层和牺牲层的绝缘体的孔内形成加热器来实现高度均匀性。 通过诸如化学机械平面化的蚀刻工艺去除牺牲层。 由于蚀刻停止层可以以可重复的方式形成，并且在晶片上的所有器件上是共同的，所以在加热器高度方面实现了相当大的均匀性。 加热器高度均匀性导致编程存储器特性更均匀。

公开(公告)号：US20070023857A1

公开(公告)日：2007-02-01

申请号：US11193952

申请日：2005-07-29

申请人： Ming Jin ,  Ilya Karpov ,  Jinwook Lee ,  Narahari Ramanuja

发明人： Ming Jin ,  Ilya Karpov ,  Jinwook Lee ,  Narahari Ramanuja

IPC分类号： H01L29/00

CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： A small critical dimension element, such as a heater for an ovonic unified memory, may be formed within a pore by using successive sidewall spacers. The use of at least two successive spacers enables the limitations imposed by lithography and the limitations imposed by bread loafing to be overcome to provide reduced critical dimension elements.

摘要翻译： 可以通过使用连续的侧壁间隔物在孔内形成小的关键尺寸元件，例如用于二次统一存储器的加热器。 使用至少两个连续的间隔物使得能够克服通过光刻所施加的限制，并且克服由面包变形所施加的限制以提供减小的临界尺寸元件。

公开(公告)号：US10216422B2

公开(公告)日：2019-02-26

申请号：US15634100

申请日：2017-06-27

申请人： Chanha Kim ,  Hyunkyo Oh ,  Oak-Ha Kim ,  Seungkyung Ro ,  Jong-Nam Baek ,  Donggi Lee ,  Jinwook Lee ,  Heewon Lee

发明人： Chanha Kim ,  Hyunkyo Oh ,  Oak-Ha Kim ,  Seungkyung Ro ,  Jong-Nam Baek ,  Donggi Lee ,  Jinwook Lee ,  Heewon Lee

IPC分类号： G06F12/00 ,  G06F3/06 ,  G06N3/04 ,  G06N5/04 ,  G06N99/00 ,  G06F12/02 ,  G06N3/063

摘要： A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.