公开(公告)号：US07750176B2

公开(公告)日：2010-07-06

申请号：US12458009

申请日：2009-06-29

Applicant: Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

Inventor： Hyeon Jin Shin ,  Hyun Dam Jeong ,  Jong Baek Seon ,  Sang Kook Mah ,  Jin Heong Yim ,  Jae Jun Lee ,  Kwang Hee Lee ,  Jung Bae Kim

IPC: C07F7/08 ,  C08G77/04 ,  B32B9/04

CPC classification number: C07F7/21 ,  Y10T428/31663

Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Abstract translation: 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。

公开(公告)号：US07541633B2

公开(公告)日：2009-06-02

申请号：US11285175

申请日：2005-11-23

Applicant: Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

Inventor： Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

IPC: H01L27/108

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.

Abstract translation: 提供PRAM及其制造方法。 PRAM包括晶体管和数据存储能力。 数据存储能力连接到晶体管。 数据存储器包括顶电极，底电极和多孔PCM层。 多孔PCM层插入在顶部电极和底部电极之间。

公开(公告)号：US07108922B2

公开(公告)日：2006-09-19

申请号：US10768058

申请日：2004-02-02

Applicant: Yi Yeol Lyu ,  Jin Heong Yim ,  Ki Yong Song ,  Hyun Dam Jeong ,  Joon Sung Ryu

Inventor： Yi Yeol Lyu ,  Jin Heong Yim ,  Ki Yong Song ,  Hyun Dam Jeong ,  Joon Sung Ryu

IPC: C09D5/00

CPC classification number: C09D183/14 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.

Abstract translation: 具有新颖结构的硅氧烷类树脂和使用其的半导体层间绝缘膜。 除了优异的机械性能之外，硅氧烷类树脂具有低介电常数，并且是在半导体器件的互连层之间的绝缘膜中的有用材料。

公开(公告)号：US20060192193A1

公开(公告)日：2006-08-31

申请号：US11285175

申请日：2005-11-23

Applicant: Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

Inventor： Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

IPC: H01L29/02

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.

公开(公告)号：US06632748B2

公开(公告)日：2003-10-14

申请号：US09961449

申请日：2001-09-25

Applicant: Jin Heong Yim ,  Yi Yeol Lyu ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Keun Byoung Yoon

Inventor： Jin Heong Yim ,  Yi Yeol Lyu ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Keun Byoung Yoon

IPC: H01L2131

CPC classification number: H01L21/31695 ,  C08L5/16 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  C08L2666/02

Abstract: The present invention provides a composition for preparing substances having nano-pores, said composition comprising cyclodextrin derivative, thermo-stable organic or inorganic matrix precursor, and solvent for dissolving said two solid components. There is also provided an interlayer insulating film having evenly distributed nano-pores with a diameter less than 50 Å, which is required for semiconductor devices.

Abstract translation: 本发明提供一种用于制备具有纳米孔的物质的组合物，所述组合物包含环糊精衍生物，热稳定性有机或无机基质前体，以及用于溶解所述两种固体组分的溶剂。 还提供了具有均匀分布的纳米孔的层间绝缘膜，其直径小于等于半导体器件所需的纳米孔。

公开(公告)号：US07872250B2

公开(公告)日：2011-01-18

申请号：US12428284

申请日：2009-04-22

Applicant: Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

Inventor： Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.

Abstract translation: 提供PRAM及其制造方法。 PRAM包括晶体管和数据存储能力。 数据存储能力连接到晶体管。 数据存储器包括顶电极，底电极和多孔PCM层。 多孔PCM层插入在顶部电极和底部电极之间。

公开(公告)号：US20090236582A1

公开(公告)日：2009-09-24

申请号：US12428284

申请日：2009-04-22

Applicant: Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

Inventor： Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.

Abstract translation: 提供PRAM及其制造方法。 PRAM包括晶体管和数据存储能力。 数据存储能力连接到晶体管。 数据存储器包括顶电极，底电极和多孔PCM层。 多孔PCM层插入在顶部电极和底部电极之间。

公开(公告)号：US07539038B2

公开(公告)日：2009-05-26

申请号：US11249395

申请日：2005-10-14

Applicant: Kwang Hee Lee ,  Won Jae Joo ,  Jin Heong Yim ,  Yoon Sok Kang

Inventor： Kwang Hee Lee ,  Won Jae Joo ,  Jin Heong Yim ,  Yoon Sok Kang

IPC: G11C11/00 ,  H01L23/58 ,  H01L21/00

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/15 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L51/0036 ,  H01L51/0591

Abstract: A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an organic-inorganic complex for use in formation of nanopores, and has metal nanoparticles or metal ions fed into the nanopores. Therefore, the memory device has excellent processability, high reproducibility, and uniform performance.

Abstract translation: 本发明的存储器件包括：具有夹在上电极和下电极之间的纳米通道的存储层，其中存储层由用于形成纳米孔的有机 - 无机复合物制成，并且具有金属纳米颗粒或金属离子 喂入纳米孔。 因此，存储器件具有优异的可加工性，高重现性和均匀的性能。

公开(公告)号：US07169477B2

公开(公告)日：2007-01-30

申请号：US10724732

申请日：2003-12-02

Applicant: Yi Yeol Lyu ,  Kwang Hee Lee ,  Ji Man Kim ,  Seok Chang ,  Jin Heong Yim ,  Jae Geun Park

Inventor： Yi Yeol Lyu ,  Kwang Hee Lee ,  Ji Man Kim ,  Seok Chang ,  Jin Heong Yim ,  Jae Geun Park

IPC: B32B9/04 ,  D05D3/02

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31695 ,  Y10S428/924 ,  Y10S428/931 ,  Y10T428/31663

Abstract: The present invention provides a composition for preparing porous dielectric thin films containing pore-generating material, said composition comprising gemini detergent, and/or a quaternary alkyl ammonium salt, a thermo-stable organic or inorganic matrix precursor, and solvent for dissolving the two solid components. There is also provided an interlayer insulating film having good mechanical properties such as hardness, modulus and hydroscopicity, which is required for semiconductor devices.

Abstract translation: 本发明提供了一种用于制备含有孔产生材料的多孔电介质薄膜的组合物，所述组合物包含双子晶洗涤剂和/或季烷基铵盐，热稳定有机或无机基质前体，以及用于溶解两种固体的溶剂 组件。 还提供了半导体器件所需的具有良好机械性能如硬度，模量和吸湿性的层间绝缘膜。

公开(公告)号：US07019099B2

公开(公告)日：2006-03-28

申请号：US10621380

申请日：2003-07-18

Applicant: Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jung Hyung Kim

Inventor： Yi Yeol Lyu ,  Jin Heong Yim ,  Sang Kook Mah ,  Eun Ju Nah ,  Il Sun Hwang ,  Hyun Dam Jeong ,  Jung Hyung Kim

IPC: C08G77/18

CPC classification number: H01L21/02126 ,  C08G77/04 ,  C08G77/50 ,  H01B3/46 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31695

Abstract: Disclosed herein are siloxane-based resins prepared by hydrolyzing and polycondensing cyclic and/or cage-shape siloxane compounds, optionally with at least one silane compound, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein are methods for forming insulating film between interconnect layers in semiconductor devices by using the siloxane-based resins thus prepared as low dielectric insulating materials.