Redundant comparator design for improved offset voltage and single event effects hardness

    公开(公告)号:US06563347B2

    公开(公告)日:2003-05-13

    申请号:US09973106

    申请日:2001-10-09

    IPC分类号: H03K522

    CPC分类号: H03K5/24

    摘要: An analog comparator architecture has improved immunity to single event effects and variations in input offset voltage. A conventional single analog comparator-based circuit is replaced with plural comparators, driving a “majority vote” logic block. The effective input offset voltage of the multi-comparator design is the middle one of the individual comparators' input offset voltages. A single event upset on any comparator may momentarily perturb its output into the incorrect state; however, the output of the majority voting logic block will remain in the correct state, as only one comparator is upset. In addition, where a heavy ion strike on any comparator's bias current source causes a momentary loss of bias current, this upsets only one comparator, so that the output of the voting logic block is unaffected.

    Spatially redundant and complementary semiconductor device-based, single event transient-resistant linear amplifier circuit architecture

    公开(公告)号:US06525590B2

    公开(公告)日:2003-02-25

    申请号:US09996448

    申请日:2001-11-28

    申请人: James W. Swonger

    发明人: James W. Swonger

    IPC分类号: H03K1762

    CPC分类号: H03F1/526

    摘要: A spatial and complementary polarity device redundancy-based analog circuit architecture mitigates against single event transients. At least one and preferably multiple redundant spatially separate copies of the complementary device-configured analog circuit (such as a voltage reference or an operational amplifier) are coupled in parallel to the circuit's output node, via a complementary polarity device path. The parallel inputs to the multiple spaced apart devices make the likelihood of a single particle passing through multiple circuits at the same time extremely remote, so that the intended value of the electrical parameter will be sustained by either the given circuit itself or any circuit copy at which the upset event does not occur.

    Current driver having voltage transition failure-based short circuit
protection circuit
    3.
    发明授权
    Current driver having voltage transition failure-based short circuit protection circuit 失效
    电流驱动器具有基于电压跳变故障的短路保护电路

    公开(公告)号:US5428492A

    公开(公告)日:1995-06-27

    申请号:US930737

    申请日:1992-08-14

    申请人: James W. Swonger

    发明人: James W. Swonger

    IPC分类号: G05F3/24 H02H3/087 H02H3/14

    摘要: A current driver has a short circuit protection circuit which monitors the magnitude of the current driver's output voltage. The protection circuit looks for the failure of the output voltage to either change to a prescribed non short-circuit representative value within a prescribed time window after the onset of a voltage transition at the input node, or to maintain that value as dictated by the input signal. If either of these conditions occurs, the protection circuit takes action to reduce the driver's output current to a relatively small `short circuit` current.

    摘要翻译: 电流驱动器具有短路保护电路,其监视当前驱动器的输出电压的幅度。 保护电路在输入节点开始电压转换开始之后,在规定的时间窗内寻找输出电压的故障,或者在规定的时间窗内改变为规定的非短路代表值,或者保持由输入端所规定的值 信号。 如果出现这些情况之一,则保护电路采取措施将驱动器的输出电流降低到相对较小的“短路”电流。

    High Voltage Ring Pump
    4.
    发明申请
    High Voltage Ring Pump 有权
    高压环泵

    公开(公告)号:US20120286854A1

    公开(公告)日:2012-11-15

    申请号:US13105743

    申请日:2011-05-11

    申请人: James W. Swonger

    发明人: James W. Swonger

    IPC分类号: G05F3/02

    摘要: A multi-stage device for boosting an input voltage is discussed. Each stage of the device comprises a stage of a ring oscillator and a charge pump. An oscillating signal, generated by the ring oscillator within the device, drives the charge pump in each stage of the device. The charge pumps of the stages are serially connected. A final stage of the multi-stage device is adapted to provide voltage to a load circuit. The multi-stage device is applicable for generation of different bias voltages from one or more source voltages.

    摘要翻译: 讨论了用于升高输入电压的多级装置。 该装置的每个阶段包括环形振荡器和电荷泵的级。 由器件内的环形振荡器产生的振荡信号在器件的每个级中驱动电荷泵。 级的电荷泵串联。 多级装置的最后一级适于向负载电路提供电压。 多级器件适用于从一个或多个源极电压产生不同的偏置电压。

    High voltage protection circuits
    5.
    发明授权
    High voltage protection circuits 失效
    高压保护电路

    公开(公告)号:US5663860A

    公开(公告)日:1997-09-02

    申请号:US673396

    申请日:1996-06-28

    申请人: James W. Swonger

    发明人: James W. Swonger

    CPC分类号: H01L27/0262 H01L27/0251

    摘要: Integrated circuits are provided for protecting a device from high voltage signals, such as caused by ESD, at an external pin (12) of a device on an integrated circuit. A first circuit has a voltage reference terminal (24), and a pin resistor (13) connected in series with the pin (12) and an input terminal (14) to a functional circuit. An SCR (30) has an anode, cathode, anode-gate, and cathode-gate terminals. The anode of the SCR (30) is connected to the input terminal, while the cathode of the SCR is connected to the voltage reference terminal (24). A shunt resistor (19) connects across the anode and anode-gate of the SCR (30), and an another shunt resistor (20) connects across the cathode and cathode-gate of the SCR. A zener diode (22) is provided for setting a breakdown voltage of the SCR (30) between its anode-gate and cathode-gate. This integrated circuit protects a device against high voltages having a positive polarity, and also protects the device from ESD voltages having a negative polarity by switching the anode connections with the cathode connections. In operation, the SCR (30) triggers in response to a voltage at the pin (12) above the zener's breakdown voltage, and the SCR automatically turns off when the voltage across the pin resistor (13) has returned to within a hold voltage level that may be near or within the operational range of signals at the pin. The relative size of the first resistor (13) and the one of shunt resistors (19 or 20) having the lowest resistance controls the holding current of the SCR at either the anode-gate or cathode-gate of the SCR (30). Another integrated circuit provides for protecting a device from high voltage signals having either a positive or negative polarity using two SCRs (28a, 28b).

    摘要翻译: 集成电路用于在集成电路上的器件的外部引脚(12)处保护器件免受诸如由ESD引起的高电压信号的影响。 第一电路具有电压参考端子(24)和与引脚(12)串联连接的引脚电阻器(13)和到功能电路的输入端子(14)。 SCR(30)具有阳极,阴极,阳极栅极和阴极栅极端子。 SCR(30)的阳极连接到输入端子,而SCR的阴极连接到电压参考端子(24)。 分流电阻器(19)连接在SCR(30)的阳极和阳极栅极之间,并且另一个分流电阻器(20)连接在SCR的阴极和阴极栅极两端。 提供齐纳二极管(22),用于设置其阳极栅极和阴极栅极之间的SCR(30)的击穿电压。 该集成电路保护器件免受具有正极性的高电压,并且还通过切换与阴极连接的阳极连接来保护器件免受具有负极性的ESD电压。 在操作中,SCR(30)响应于高于齐纳二次击穿电压的引脚(12)处的电压而触发,并且当引脚电阻(13)两端的电压已经恢复到保持电压电平时,SCR自动关闭 这可能在引脚的信号的接近或处于操作范围内。 具有最低电阻的第一电阻器(13)和分流电阻器(19或20)的相对尺寸控制SCR(30)的阳极 - 栅极或阴极栅极处的SCR的保持电流。 另一集成电路用于使用两个SCR(28a,28b)来保护器件免受具有正或负极性的高电压信号。

    High voltage ring pump with inverter stages and voltage boosting stages
    6.
    发明授权
    High voltage ring pump with inverter stages and voltage boosting stages 有权
    具有变频器级和升压级的高压环泵

    公开(公告)号:US08686787B2

    公开(公告)日:2014-04-01

    申请号:US13105743

    申请日:2011-05-11

    申请人: James W. Swonger

    发明人: James W. Swonger

    IPC分类号: G05F1/10

    摘要: A multi-stage device for boosting an input voltage is discussed. Each stage of the device comprises a stage of a ring oscillator and a charge pump. An oscillating signal, generated by the ring oscillator within the device, drives the charge pump in each stage of the device. The charge pumps of the stages are serially connected. A final stage of the multi-stage device is adapted to provide voltage to a load circuit. The multi-stage device is applicable for generation of different bias voltages from one or more source voltages.

    摘要翻译: 讨论了用于升高输入电压的多级装置。 该装置的每个阶段包括环形振荡器和电荷泵的级。 由器件内的环形振荡器产生的振荡信号在器件的每个级中驱动电荷泵。 级的电荷泵串联。 多级装置的最后一级适于向负载电路提供电压。 多级器件适用于从一个或多个源极电压产生不同的偏置电压。

    Power device driving circuit and associated methods

    公开(公告)号:US06507226B2

    公开(公告)日:2003-01-14

    申请号:US09915119

    申请日:2001-07-25

    IPC分类号: H03B100

    CPC分类号: H03K17/063 H03K2217/0036

    摘要: The circuit and method translate a logic level input signal to signals at high voltage levels to drive a power device, such as a power MOSFET, while minimizing the power consumption. The circuit for driving the power device includes a low side gate driver, and a high side gate driver adjacent thereto. The high side gate drive includes a high side gate driver logic input, a high side gate driver output, a latch connected between the high side gate driver logic input and the high side gate driver output, and a control circuit receiving an output of the latch and controlling signals from the high side gate driver logic input to the latch based upon the output of the latch.