摘要:
An analog comparator architecture has improved immunity to single event effects and variations in input offset voltage. A conventional single analog comparator-based circuit is replaced with plural comparators, driving a “majority vote” logic block. The effective input offset voltage of the multi-comparator design is the middle one of the individual comparators' input offset voltages. A single event upset on any comparator may momentarily perturb its output into the incorrect state; however, the output of the majority voting logic block will remain in the correct state, as only one comparator is upset. In addition, where a heavy ion strike on any comparator's bias current source causes a momentary loss of bias current, this upsets only one comparator, so that the output of the voting logic block is unaffected.
摘要:
A spatial and complementary polarity device redundancy-based analog circuit architecture mitigates against single event transients. At least one and preferably multiple redundant spatially separate copies of the complementary device-configured analog circuit (such as a voltage reference or an operational amplifier) are coupled in parallel to the circuit's output node, via a complementary polarity device path. The parallel inputs to the multiple spaced apart devices make the likelihood of a single particle passing through multiple circuits at the same time extremely remote, so that the intended value of the electrical parameter will be sustained by either the given circuit itself or any circuit copy at which the upset event does not occur.
摘要:
A current driver has a short circuit protection circuit which monitors the magnitude of the current driver's output voltage. The protection circuit looks for the failure of the output voltage to either change to a prescribed non short-circuit representative value within a prescribed time window after the onset of a voltage transition at the input node, or to maintain that value as dictated by the input signal. If either of these conditions occurs, the protection circuit takes action to reduce the driver's output current to a relatively small `short circuit` current.
摘要:
A multi-stage device for boosting an input voltage is discussed. Each stage of the device comprises a stage of a ring oscillator and a charge pump. An oscillating signal, generated by the ring oscillator within the device, drives the charge pump in each stage of the device. The charge pumps of the stages are serially connected. A final stage of the multi-stage device is adapted to provide voltage to a load circuit. The multi-stage device is applicable for generation of different bias voltages from one or more source voltages.
摘要:
Integrated circuits are provided for protecting a device from high voltage signals, such as caused by ESD, at an external pin (12) of a device on an integrated circuit. A first circuit has a voltage reference terminal (24), and a pin resistor (13) connected in series with the pin (12) and an input terminal (14) to a functional circuit. An SCR (30) has an anode, cathode, anode-gate, and cathode-gate terminals. The anode of the SCR (30) is connected to the input terminal, while the cathode of the SCR is connected to the voltage reference terminal (24). A shunt resistor (19) connects across the anode and anode-gate of the SCR (30), and an another shunt resistor (20) connects across the cathode and cathode-gate of the SCR. A zener diode (22) is provided for setting a breakdown voltage of the SCR (30) between its anode-gate and cathode-gate. This integrated circuit protects a device against high voltages having a positive polarity, and also protects the device from ESD voltages having a negative polarity by switching the anode connections with the cathode connections. In operation, the SCR (30) triggers in response to a voltage at the pin (12) above the zener's breakdown voltage, and the SCR automatically turns off when the voltage across the pin resistor (13) has returned to within a hold voltage level that may be near or within the operational range of signals at the pin. The relative size of the first resistor (13) and the one of shunt resistors (19 or 20) having the lowest resistance controls the holding current of the SCR at either the anode-gate or cathode-gate of the SCR (30). Another integrated circuit provides for protecting a device from high voltage signals having either a positive or negative polarity using two SCRs (28a, 28b).
摘要:
A multi-stage device for boosting an input voltage is discussed. Each stage of the device comprises a stage of a ring oscillator and a charge pump. An oscillating signal, generated by the ring oscillator within the device, drives the charge pump in each stage of the device. The charge pumps of the stages are serially connected. A final stage of the multi-stage device is adapted to provide voltage to a load circuit. The multi-stage device is applicable for generation of different bias voltages from one or more source voltages.
摘要:
The circuit and method translate a logic level input signal to signals at high voltage levels to drive a power device, such as a power MOSFET, while minimizing the power consumption. The circuit for driving the power device includes a low side gate driver, and a high side gate driver adjacent thereto. The high side gate drive includes a high side gate driver logic input, a high side gate driver output, a latch connected between the high side gate driver logic input and the high side gate driver output, and a control circuit receiving an output of the latch and controlling signals from the high side gate driver logic input to the latch based upon the output of the latch.