公开(公告)号：US4213840A

公开(公告)日：1980-07-22

申请号：US959792

申请日：1978-11-13

申请人： Masahiro Omori ,  James N. Wholey ,  J. Ross Anderson

发明人： Masahiro Omori ,  James N. Wholey ,  J. Ross Anderson

IPC分类号： H01L29/80 ,  H01L21/027 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L21/441

CPC分类号： H01L29/66863 ,  H01L21/0272 ,  H01L21/28587 ,  H01L29/47

摘要： A method of fabricating gate electrodes on microwave field effect transistors is described. A first layer of photo-resist is deposited and photolithographically defined on top of a semiconductor material with openings in the photoresist, corresponding to the gate electrode. In one embodiment, when drain and source electrodes have been previously formed, additional openings in the first layer of photoresist are defined that approximately overlay the drain and source electrodes. A metal layer is then deposited on top of this structure. A second layer of photoresist is then deposited and photolithographically defined on top of the first metal layer, with larger openings which overlay the openings in the first layer of photoresist. The thickness of the gate electrode, and in one embodiment, the sections overlaying the drain and source electrodes, is then increased by plating gold into the openings in the second layer of photoresist.

摘要翻译： 描述了在微波场效应晶体管上制造栅电极的方法。 沉积第一层光致抗蚀剂，并光刻地限定在半导体材料的顶部，在光刻胶中具有开口，对应于栅电极。 在一个实施例中，当预先形成漏极和源电极时，限定第一光致抗蚀剂层中的附加开口，其大致覆盖漏极和源电极。 然后在该结构的顶部沉积金属层。 然后沉积第二层光致抗蚀剂，并光刻地限定在第一金属层的顶部上，其中较大的开口覆盖第一层光致抗蚀剂中的开口。 然后通过将金镀在第二层光致抗蚀剂中的开口中，增加栅电极的厚度，并且在一个实施例中覆盖漏极和源电极的部分。